Patents by Inventor Danwei XIA

Danwei XIA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12787484
    Abstract: The present disclosure relates to a back contact solar cell and a photovoltaic module. The back contact solar cell includes a silicon substrate, a first passivation layer, a protective layer, a first electrode, and a second electrode. The silicon substrate has a first surface and a second surface opposite to each other. A P-type conductive section and an N-type conductive section spaced apart from each other are provided at a side of the second surface of the silicon substrate. The first passivation layer is disposed on the first surface of the silicon substrate. The protective layer is disposed on a side of the first passivation layer facing away from the silicon substrate. The first electrode is electrically connected to the P-type conductive section. The second electrode is electrically connected to the N-type conductive section.
    Type: Grant
    Filed: March 18, 2025
    Date of Patent: November 3, 2026
    Assignees: JINKO SOLAR CO., LTD., JINKO SOLAR (HAINING) CO., LTD.
    Inventors: Yubin Chen, Danwei Xia, Zhipeng Xia, Jide Huang, Changming Liu
  • Publication number: 20260136705
    Abstract: The present disclosure relates to a back contact solar cell and a photovoltaic module. The back contact solar cell includes a silicon substrate, a first passivation layer, a protective layer, a first electrode, and a second electrode. The silicon substrate has a first surface and a second surface opposite to each other. A P-type conductive section and an N-type conductive section spaced apart from each other are provided at a side of the second surface of the silicon substrate. The first passivation layer is disposed on the first surface of the silicon substrate. The protective layer is disposed on a side of the first passivation layer facing away from the silicon substrate. The first electrode is electrically connected to the P-type conductive section. The second electrode is electrically connected to the N-type conductive section.
    Type: Application
    Filed: March 18, 2025
    Publication date: May 14, 2026
    Inventors: Yubin CHEN, Danwei XIA, Zhipeng XIA, Jide HUANG, Changming LIU