Patents by Inventor Dao Hua Zhang

Dao Hua Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6872657
    Abstract: Copper seed layers for use in damascene structures are commonly deposited by CVD because of their superior step coverage. However, these films have poor adhesion to the barrier layer. This problem has been overcome by preceding the deposition of the CVD copper layer with a metal plasma treatment that lays down a very thin layer of copper while the structure receiving it is maintained at a temperature below about ?40 C. This is followed by a short exposure to a nitrogen bearing plasma. The results is a seed layer having excellent step coverage as well as very good adhesion to the underlying barrier layer.
    Type: Grant
    Filed: August 8, 2003
    Date of Patent: March 29, 2005
    Assignee: Agency for Science, Technology and Research
    Inventors: Chaoyong Li, Dao Hua Zhang