Patents by Inventor Dao Liang LU

Dao Liang LU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Mark structure and fabrication method thereof
    Patent number: 9773739
    Abstract: The present disclosure provides mark structures and fabrication methods thereof. An exemplary fabrication process includes providing a substrate having a device region, a first mark region and a second mark region; sequentially forming a device layer, a dielectric layer and a mask layer on a surface of the substrate; forming a first opening in the dielectric layer in the device region, a first mark in the dielectric layer in the first mark region, and a mark opening in dielectric layer in the second mark region, bottoms of the first opening, the first mark and the mark opening being lower than a surface of the dielectric layer, and higher than a surface of the device layer; and forming a second opening in the dielectric layer on the bottom of the first opening and a second mark in the dielectric layer on the bottom of the mark opening.
    Type: Grant
    Filed: January 4, 2017
    Date of Patent: September 26, 2017
    Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
    Inventors: Dao Liang Lu, Hong Wei Zhang, Kui Feng
  • MARK STRUCTURE AND FABRICATION METHOD THEREOF
    Publication number: 20170221833
    Abstract: The present disclosure provides mark structures and fabrication methods thereof. An exemplary fabrication process includes providing a substrate having a device region, a first mark region and a second mark region; sequentially forming a device layer, a dielectric layer and a mask layer on a surface of the substrate; forming a first opening in the dielectric layer in the device region a first mark in the dielectric layer in the first mark region, and a mark opening in dielectric layer in the second mark region, bottoms of the first opening, the first mark and the mark opening being lower than a surface of the dielectric layer, and higher than a surface of the device layer; and forming a second opening in the dielectric layer on the bottom of the first opening and a second mark in the dielectric layer on the bottom of the mark opening.
    Type: Application
    Filed: January 4, 2017
    Publication date: August 3, 2017
    Inventors: Dao Liang LU, Hong Wei ZHANG, Kui FENG