Patents by Inventor Dao-Hong Yang

Dao-Hong Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9257463
    Abstract: A device includes a semiconductor substrate, a well region in the semiconductor substrate, and a Metal-Oxide-Semiconductor (MOS) device. The MOS device includes a gate dielectric overlapping the well region, a gate electrode over the gate dielectric, and a source/drain region in the well region. The source/drain region and the well region are of opposite conductivity types. An edge of the first source drain region facing away from the gate electrode is in contact with the well region to form a junction isolation.
    Type: Grant
    Filed: August 17, 2012
    Date of Patent: February 9, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chien-Hsien Tseng, Shou-Gwo Wuu, Chia-Chan Chen, Kuo-Yu Wu, Dao-Hong Yang, Ming-Hao Chung
  • Publication number: 20130320418
    Abstract: A device includes a semiconductor substrate, a well region in the semiconductor substrate, and a Metal-Oxide-Semiconductor (MOS) device. The MOS device includes a gate dielectric overlapping the well region, a gate electrode over the gate dielectric, and a source/drain region in the well region. The source/drain region and the well region are of opposite conductivity types. An edge of the first source drain region facing away from the gate electrode is in contact with the well region to form a junction isolation.
    Type: Application
    Filed: August 17, 2012
    Publication date: December 5, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chien-Hsien Tseng, Shou-Gwo Wuu, Chia-Chan Chen, Kuo-Yu Wu, Dao-Hong Yang, Ming-Hao Chung