Abstract: A WDM1r combiner for a PON. The output end of an input waveguide is connected to the input end of a first grating filter, the output end of the first grating filter is connected to the input ends of a first mode filter, a second grating filter, a second mode filter, a connecting waveguide, a third grating filter, a third mode filter, and a fourth grating filter in sequence, and the output end of the fourth grating filter is connected to an output waveguide. The function of the WDM1r combiner for a PON is achieved in the form of cascaded grating filters; different central wavelengths and bandwidths of four channels are obtained by optimizing a grating structure; an on-chip WDM1r combiner which is low in insertion loss and crosstalk and has flat-top response is obtained; the combiner has the advantages of being simple in structure, simple in process, excellent in performance, etc.

Abstract: An electrostatic comb drive-based silicon-based MEMS optical switch and an N×N array. The optical switch is primarily constituted by two parts, namely two separated crossing waveguide mirrors and an electrostatic comb driver. The crossing waveguide mirrors are constituted by two crossing waveguides and four adiabatic tapered waveguides. The electrostatic comb driver comprises an electrostatic comb, an island spring structure, and a transmission rod. The electrostatic comb is a pair of comb teeth structures, a voltage is applied to fixed comb teeth therein, and the other parts remain grounded. Under the effect of an electrostatic force, movable comb teeth move towards the fixed comb teeth, a spring distends and pushes via the transmission rod the movable crossing waveguide mirror to move towards the fixed crossing waveguide mirror, and the separated crossing waveguide mirrors are recombined into a complete crossing waveguide.

Abstract: An ultra-broadband silicon waveguide micro-electro-mechanical systems (MEMS) photonic switch is provided, which is mainly composed of three parts: input waveguides, a waveguide crossing with a nano-gap, and output waveguides. The waveguide crossing is composed of two identical orthogonal elliptical cylinders. Four ports of the waveguide crossing respectively extend to form single-mode strip waveguides to serve as input/output waveguides. The center of the waveguide crossing is fully etched with a nano-gap. The two symmetrical port waveguides are fully etched with nano-grooves. The lower cladding near the waveguide crossing and the nano-grooves is penetrated and etched. The width of the nano-gap is adjusted through adjusting a voltage applied across both ends of the waveguide crossing, so that a guided-mode directly passes through or is totally reflected. In the disclosure, a propagation path of the photonic switch is switched through adjusting the voltage applied to the waveguide crossing.

Abstract: A WDM1r combiner for a PON. The output end of an input waveguide is connected to the input end of a first grating filter, the output end of the first grating filter is connected to the input ends of a first mode filter, a second grating filter, a second mode filter, a connecting waveguide, a third grating filter, a third mode filter, and a fourth grating filter in sequence, and the output end of the fourth grating filter is connected to an output waveguide. The function of the WDM1r combiner for a PON is achieved in the form of cascaded grating filters; different central wavelengths and bandwidths of four channels are obtained by optimizing a grating structure; an on-chip WDM1r combiner which is low in insertion loss and crosstalk and has flat-top response is obtained; the combiner has the advantages of being simple in structure, simple in process, excellent in performance, etc.

Abstract: An ultra-broadband silicon waveguide micro-electro-mechanical systems (MEMS) photonic switch is provided, which is mainly composed of three parts: input waveguides, a waveguide crossing with a nano-gap, and output waveguides. The waveguide crossing is composed of two identical orthogonal elliptical cylinders. Four ports of the waveguide crossing respectively extend to form single-mode strip waveguides to serve as input/output waveguides. The center of the waveguide crossing is fully etched with a nano-gap. The two symmetrical port waveguides are fully etched with nano-grooves. The lower cladding near the waveguide crossing and the nano-grooves is penetrated and etched. The width of the nano-gap is adjusted through adjusting a voltage applied across both ends of the waveguide crossing, so that a guided-mode directly passes through or is totally reflected. In the disclosure, a propagation path of the photonic switch is switched through adjusting the voltage applied to the waveguide crossing.

Abstract: Loss modulated silicon evanescent lasers are disclosed. A loss-modulated semiconductor laser device in accordance with one or more embodiments of the present invention comprises a semiconductor-on-insulator (SOI) structure resident on a first substrate, the SOI structure comprising a waveguide in a semiconductor layer of the SOI structure, and a semiconductor structure bonded to the semiconductor layer of the SOI structure, wherein at least one region in the semiconductor layer of the SOI structure controls a photon lifetime in the semiconductor laser device.

Abstract: Loss modulated silicon evanescent lasers are disclosed. A loss-modulated semiconductor laser device in accordance with one or more embodiments of the present invention comprises a semiconductor-on-insulator (SOI) structure resident on a first substrate, the SOI structure comprising a waveguide in a semiconductor layer of the SOI structure, and a semiconductor structure bonded to the semiconductor layer of the SOI structure, wherein at least one region in the semiconductor layer of the SOI structure controls a photon lifetime in the semiconductor laser device.