Abstract: A memory is provided. The memory includes: a storage array that includes multiple bit lines, each of the multiple bit lines is connected to multiple storage cells in the storage array; multiple column select signal units that are connected to sensitive amplifiers, the sensitive amplifiers and the multiple bit lines are disposed in one-to-one correspondence; local data buses that are divided into local data buses O and local data buses E, adjacent bit lines are electrically connected to a respective local data bus O and a respective local data bus E, respectively, through a respective sensitive amplifier and a respective column select signal unit; and a first error checking and correcting unit and a second error checking and correcting unit that are configured to check and correct errors of data.

Abstract: A memory is provided. The memory includes banks, each bank includes a U half bank and a V half bank; a first error checking and correcting unit connected with the U half banks and the V half banks and configured to check and correct errors of output data of the U half banks and the V half banks; and a second error checking and correcting unit connected with the U half banks and the V half banks and configured to check and correct errors of the output data of the U half banks and the V half banks.

Abstract: An amplification control method and circuit, a sensitive amplifier and a semiconductor memory are provided. The method includes that: a preset instruction is received, and an isolation power value and a control instruction signal are determined according to the preset instruction; an isolation control signal is generated according to the isolation power value and the control instruction signal; and an amplification circuit receives the isolation control signal and a target signal to be processed according to the preset instruction, and processes the signal to be processed and completes the preset instruction.

Abstract: Embodiments of the disclosure provide a control amplification circuit, a sensitive amplifier and a semiconductor memory. The control amplification circuit includes: a power consumption control circuit, configured to receive a power consumption control signal and output a first reference signal according to the power consumption control signal; an isolating circuit, configured to determine a control instruction signal and generate an isolation control signal according to the control instruction signal; and an amplification circuit, configured to receive the first reference signal, the isolation control signal and a signal to be processed, and process the signal to be processed based on the first reference signal and the isolation control signal to obtain a target amplified signal.

Abstract: A delay circuit includes the following: an input module, configured to receive a target input signal and output the target input signal to a first node, the target input signal being a rising edge signal or a falling edge signal of a pulse signal; an output module, configured to output a target output signal, the target output signal being a delayed signal of the target input signal; and a delay control module, connected to the input module through the first node, and connected to the output module through a second node. The delay control module includes at least one delay capacitor unit, and the delay control module is configured to control a connection between the at least one delay capacitor unit and the first node according to a rising edge delay duration or a falling edge delay duration.

Abstract: A memory is provided. The memory includes banks, each bank includes a U half bank and a V half bank; a first error checking and correcting unit connected with the U half banks and the V half banks and configured to check and correct errors of output data of the U half banks and the V half banks; and a second error checking and correcting unit connected with the U half banks and the V half banks and configured to check and correct errors of the output data of the U half banks and the V half banks.