Abstract: A silicon wafer horizontal growth apparatus comprises a casing forming a cavity; a crucible within the cavity and having a melting zone, an overflow port, a first and a second overflow surface; a feeding assembly for adding raw material to the melting zone at an adjustable rate; a heating assembly comprising two movable heaters disposed on the upper and lower sides of the crucible at an interval; a thermal insulation component for maintaining a temperature in the cavity; a gas flow assembly comprising a jet located above the second overflow surface, a gas conductive graphite member mounted on the bottom of the crucible, a quartz exhaust tube connected with the gas conductive graphite member, and a quartz cooling tube outside the exhaust tube; and a heat insulating baffle located above the second overflow surface for isolating the heating assembly from the jet, dividing the cavity into hot and cold zones.