Abstract: This application discloses a network slice information transmission method and apparatus. For example, a controller performs slice division on a network based on a service requirement and then obtains slice information, and sends the slice information to a first network device in the network by using a path computation element protocol (PCEP) packet, which includes first slice information corresponding to the first network device. After receiving the PCEP packet, the first network device parses the PCEP packet to obtain the first slice information, and further performs network slice configuration based on the first slice information. That is, in this application, the controller delivers the slice information by using the PCEP packet, so that after obtaining the PCEP packet, the first network device can obtain the first slice information corresponding to the first network device in a timely manner and perform network slice configuration without waiting for a configuration command.

Abstract: Methods of manufacturing edge-emitting lasers include cleaving a semiconductor wafer along one or more streets formed on the wafer. A street is an extended region formed without dielectric and metal layers and may be formed on the semiconductor wafer, for example, by a selective wet etching process or a dry etching process. Cleaving along the street(s) without dielectric and metal layers achieves cleaved facets, which are substantially free from microstep defects and metal contamination. After cleaving, a dielectric material may be provided on the remaining street portions along the ends of the cleaved facets, for example, by intentional overspray deposition of facet coatings.

Abstract: The present disclosure is generally directed to an EML with a filter layer disposed between an active region of the EML and a substrate of the EML to absorb a portion of unmodulated light energy, and preferably the unmodulated light energy caused by transverse electric (TE) substrate mode. The filter layer preferably comprises a material with an energy band gap (Eg) that is less than the energy band gap of the predetermined channel wavelength to absorb unmodulated laser light.

Abstract: Disclosed are a narrow pulse width laser, a method for emitting narrow pulse width laser, a device, and a storage medium. The narrow pulse width laser includes: a pulse signal controller and a pulse laser emitter. An output end of the pulse signal controller is connected to an input end of the pulse laser emitter. The pulse signal controller is configured to obtain a first pulse signal and a second pulse signal, the first pulse signal is identical to the second pulse signal, the first pulse signal is controlled to delay for obtaining a delay signal, there is a target phase difference between the delay signal and the second pulse signal, the delay signal is superimposed on the second pulse signal to obtain a target pulse signal.

Abstract: A display panel and a display device are provided. The display panel includes a plurality of display units, each display unit includes a transparent area, and the display panel further includes a base substrate and a composite functional layer. The composite functional layer is provided on a side of the base substrate and has a first through-hole formed therein, and the first through-hole is provided in the transparent area. The composite functional layer includes a composite transparent layer and a light-shielding layer. The composite transparent layer includes a plurality of transparent functional layers, and includes a light-transmitting part surrounding the first through-hole. An orthographic projection of the light-shielding layer on the base substrate covers an orthographic projection of at least a portion of the light-transmitting part on the base substrate.

Abstract: A metal oxide thin film transistor is provided, which includes a metal oxide semiconductor layer, including a first semiconductor layer and a second semiconductor layer, the carrier mobility of the first semiconductor layer is higher than that of the second semiconductor layer; the metal oxide semiconductor layer includes a lower surface, an upper surface and a lateral surface, the source electrode is in contact with the lateral surface and the upper surface; the region where the lateral surface contacts the source electrode or the drain electrode includes a first contact region and a second contact region; which have the shape: a first angle between the lower surface of the metal oxide semiconductor layer and the lateral surface of the first contact region is larger than a second angle between the lower surface of the metal oxide semiconductor layer and the lateral surface of the second contact region.

Abstract: A multi-section semiconductor optical amplifier (SOA) includes at least two sections in series—an input section at an input side and an output section at an output side—with the input section having a higher optical confinement (also referred to as a high gamma) and the output section having a lower optical confinement (also referred to as a low gamma). The input section may also have a shorter length than the output section. The multi-section structure allows optimizing the input side and the output side design separately such that the input section provides a high gain section configured to quickly increase optical power and the output section provides a low differential gain section that improves saturation. As a result, the multi-section SOA can achieve higher output power with high gain and lower signal noise while demanding low input power.

Abstract: Disclosed are a method and a device for marking an image position of a sub-pixel of a display screen, and a storage medium. The method includes: obtaining an original image of the sub-pixel of the display screen that has been taken, marking all the sub-pixel bright points in the original image of the sub-pixel to obtain a sub-pixel mark map; searching for points to be filled among adjacent points of the bright point of each sub-pixel in the sub-pixel mark map according to the first direction pixel pitch and the second direction pixel pitch in the original image of the sub-pixel, filling the points to be filled to obtain a filling mark map; and obtaining the target sub-pixel mark map based on the sub-pixel mark map and the filling mark map.

Abstract: A selector assembly includes a housing having a spherical cavity and a detent cavity. A positioning sensor is positioned within a sensor cavity and is in communication with the spherical cavity. A selector operates about a center point of the spherical cavity and includes a spheroid member that slidably engages a guide surface of the housing. The spheroid member includes a magnet in electromagnetic communication with the positioning sensor. A first pivot and a second pivot include respective first and second rotational axes that each extend through the center point. A detent pin is biased toward and slidably engages a detent surface of the detent cavity to define a plurality of selector positions of the selector. Operation of the selector within the spherical cavity and along the detent surface defines the plurality of selector positions that are communicated to a controller via the magnet and the positioning sensor.

Abstract: A semiconductor optical device including a buried heterostructure (BH) has reduced parasitic capacitance and reduced inter-diffusion. The semiconductor optical device is manufactured by a regrowth on both sides of a mesa structure with an Fe-doped current blocking layer and an n-type cladding layer outside of an active region in the mesa structure. The Fe-doped current blocking layer and the n-type cladding layer may be disposed and configured such that Fe/Zn inter-diffusion is reduced or prevented by minimal contact between the Fe-doped current blocking layer and a highly Zn-doped cladding layer and by the n-type cladding layer, as will be described in greater detail below. A low Zn-doped or undoped material may be used for a thin cladding layer above the active region in the mesa structure to further suppress Zn/Fe inter-diffusion.

Abstract: A selector assembly includes a housing having a spherical cavity and a detent cavity that form a continuous selector cavity. A selector slidably operates within the selector cavity and about a center point of the spherical cavity. The selector includes a spheroid member that is contained within the spherical cavity and slidably engages a guide surface that defines the spherical cavity. A first pivot includes a first rotational axis that extends through the center point of the spherical cavity. A second pivot includes a second rotational axis that extends through the center point of the spherical cavity. A detent pin is biased toward a detent surface of the detent cavity and slidably engages the detent surface to define a plurality of selector positions of the selector.

Abstract: An aspect of the present disclosure includes a direct modulated laser (DML) with a dielectric current confinement ridge waveguide (RWG) structure. The DML comprises a substrate, one or more layers of material disposed on the substrate to provide a multi quantum well (MQW), first and second insulation/dielectric structures disposed on opposite sides of the MQW, and one or more layers of material disposed on the MQW to provide a mesa structure for receiving a driving current. The mesa structure is preferably disposed between the first and second insulation structures to provide a dielectric current confinement (RWG) structure. The mesa structure further preferably includes an overall width that is greater than the overall width than the active region of the DML that provides the MQW.

Abstract: The present disclosure is generally directed to an EML with a filter layer disposed between an active region of the EML and a substrate of the EML to absorb a portion of unmodulated light energy, and preferably the unmodulated light energy caused by transverse electric (TE) substrate mode. The filter layer preferably comprises a material with an energy band gap (Eg) that is less than the energy band gap of the predetermined channel wavelength to absorb unmodulated laser light.

Abstract: A selector assembly includes a housing having a spherical cavity and a detent cavity. A positioning sensor is positioned within a sensor cavity and is in communication with the spherical cavity. A selector operates about a center point of the spherical cavity and includes a spheroid member that slidably engages a guide surface of the housing. The spheroid member includes a magnet in electromagnetic communication with the positioning sensor. A first pivot and a second pivot include respective first and second rotational axes that each extend through the center point. A detent pin is biased toward and slidably engages a detent surface of the detent cavity to define a plurality of selector positions of the selector. Operation of the selector within the spherical cavity and along the detent surface defines the plurality of selector positions that are communicated to a controller via the magnet and the positioning sensor.

Abstract: A selector assembly includes a housing having a spherical cavity and a detent cavity that form a continuous selector cavity. A selector slidably operates within the selector cavity and about a center point of the spherical cavity. The selector includes a spheroid member that is contained within the spherical cavity and slidably engages a guide surface that defines the spherical cavity. A first pivot includes a first rotational axis that extends through the center point of the spherical cavity. A second pivot includes a second rotational axis that extends through the center point of the spherical cavity. A detent pin is biased toward a detent surface of the detent cavity and slidably engages the detent surface to define a plurality of selector positions of the selector.

Abstract: Disclosed are a method and a device for marking an image position of a sub-pixel of a display screen, and a storage medium. The method includes: obtaining an original image of the sub-pixel of the display screen that has been taken, marking all the sub-pixel bright points in the original image of the sub-pixel to obtain a sub-pixel mark map; searching for points to be filled among adjacent points of the bright point of each sub-pixel in the sub-pixel mark map according to the first direction pixel pitch and the second direction pixel pitch in the original image of the sub-pixel, filling the points to be filled to obtain a filling mark map; and obtaining the target sub-pixel mark map based on the sub-pixel mark map and the filling mark map.

Abstract: The present invention provides a special fertilizer for cut side slope soil remediation in high altitude areas, which is prepared by effectively compounding raw material components of a yak manure-containing compost, an organic micro multi-element fertilizer, a chemical fertilizer, attapulgite powder and sodium alginate under certain conditions. The special fertilizer has obvious effects on the aspects of improving the physicochemical properties of artificial soil at cut side slope wounds in the high altitude areas, increasing the fertilizer efficiency and promoting vegetation restoration.

Abstract: The present invention provides a special fertilizer for cut side slope soil remediation in high altitude areas, which is prepared by effectively compounding raw material components of a yak manure-containing compost, an organic micro multi-element fertilizer, a chemical fertilizer, attapulgite powder and sodium alginate under certain conditions. The special fertilizer has obvious effects on the aspects of improving the physicochemical properties of artificial soil at cut side slope wounds in the high altitude areas, increasing the fertilizer efficiency and promoting vegetation restoration.

Abstract: An intersubband quantum cascade laser structure includes multiple coupled laser stages, wherein each stage has a multilayer structure including an electron injector, an active region with at least one quantum well, and an electron reflector. Electrons injected from the injector into the active region at a high energy level relax to a lower energy level with the emission of a photon at, for example, mid-infrared wavelengths. The reflector reflects electrons at the higher energy level at which they were injected and transmits electrons from the lower energy level after emission of a photon. Multiple layers of semiconductor are formed on each side of the multistage structure to provide conduction across the device and to provide optical confinement of the photons emitted.

Abstract: A semiconductor laser and light emitting device is defined. The device comprises an electron injector and an active region adjacent to the electron injector. The active region includes at least one deep quantum well with barrier layers adjacent to either side of the quantum well or wells such that electrons injected from the electron injector into a high energy level of the quantum well relax to a lower energy level with the emission of a photon and are transmitted out to a region beyond the last barrier layer of the active region. The electron injector includes quantum well layers. The bottom of each deep quantum well or wells in the active region is lower in energy than the bottoms of the quantum well layers in the electron injector. The device may further comprise at least two stages wherein each stage contains an electron injector and an active region.