Abstract: A universal test chiplet for testing a plurality of chiplets to be tested is provided. The universal test chiplet includes a chiplet test control circuit module, a test data distribution circuit module, a memory test configuration circuit module, and a chiplet test interface circuit module. The chiplet test control circuit module is configured to provide test data and configure test modes for the chiplets to be tested. The test data distribution circuit module is configured to distribute the test data required by each of the chiplets to be tested from a test data bus. The memory test configuration circuit module is configured to provide test circuits for memories of the chiplets to be tested and automatically generate a test vector. The chiplet test interface circuit module is configured to transmit the test data to the chiplets to be tested in any direction through chiplet test interfaces.

Abstract: An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.

Abstract: An operation vehicle, comprising a vehicle body and a cab provided at a front end of the vehicle body, and further comprising a boom device. The boom device comprises at least seven booms hinged end to end in sequence. When the boom device is in a folded state, a fifth boom and a sixth boom are located on the same straight line, a seventh boom is located below the sixth boom, and end portions of at least two booms in the seven booms are located above the cab. The technical solutions of the present application overcome the defect in the prior art that the flexibility of boom construction of the operation vehicle is low.

Abstract: Methods of making such compounds, powders, and cathode active materials are described. The powders are formed of particles with specific properties: a particle size distribution with a D50 ranging from 10 ?m to 20 ?m, a D10 less than 8 ?m, and a D99 of the particles ranges from 25 ?m to 35 ?m. The final compound is represented by the Formula Li?(Co1-x-y-zMnxMezAly)O?, wherein 0.95<?<1.05, x?1.00, 0<y?0.04, 0<z?0.050, and ??2.

Abstract: A display substrate, a manufacturing method thereof and a display apparatus are provided. In the present disclosure, a first transistor group with oxide semiconductor as an active layer material is disposed on a side of a second transistor group with polysilicon as an active layer material away from the base, and an area enclosed by orthographic projections of the transistors in the first transistor group on the base is overlapped with an area enclosed by orthographic projections of the transistors in the second transistor group on the base. Stable performance of the transistors included can be ensured in a manufacturing process of the first transistor group and the second transistor group located in different layers, and at the same time, an area occupied by the driving circuit can be reduced so as to decrease a frame width of a display apparatus or improve resolution of the display apparatus.

Abstract: Compounds, particles, and cathode active materials that can be used in lithium ion batteries are described herein. Methods of making such compounds, powders, and cathode active materials are described. The particles have a particle size distribution with a D50 ranging from 10 ?m to 20 ?m.

Abstract: Methods of manufacturing edge-emitting lasers include cleaving a semiconductor wafer along one or more streets formed on the wafer. A street is an extended region formed without dielectric and metal layers and may be formed on the semiconductor wafer, for example, by a selective wet etching process or a dry etching process. Cleaving along the street(s) without dielectric and metal layers achieves cleaved facets, which are substantially free from microstep defects and metal contamination. After cleaving, a dielectric material may be provided on the remaining street portions along the ends of the cleaved facets, for example, by intentional overspray deposition of facet coatings.

Abstract: The present disclosure is generally directed to an EML with a filter layer disposed between an active region of the EML and a substrate of the EML to absorb a portion of unmodulated light energy, and preferably the unmodulated light energy caused by transverse electric (TE) substrate mode. The filter layer preferably comprises a material with an energy band gap (Eg) that is less than the energy band gap of the predetermined channel wavelength to absorb unmodulated laser light.

Abstract: A multi-section semiconductor optical amplifier (SOA) includes at least two sections in series—an input section at an input side and an output section at an output side—with the input section having a higher optical confinement (also referred to as a high gamma) and the output section having a lower optical confinement (also referred to as a low gamma). The input section may also have a shorter length than the output section. The multi-section structure allows optimizing the input side and the output side design separately such that the input section provides a high gain section configured to quickly increase optical power and the output section provides a low differential gain section that improves saturation. As a result, the multi-section SOA can achieve higher output power with high gain and lower signal noise while demanding low input power.

Abstract: Disclosed are a method and a device for marking an image position of a sub-pixel of a display screen, and a storage medium. The method includes: obtaining an original image of the sub-pixel of the display screen that has been taken, marking all the sub-pixel bright points in the original image of the sub-pixel to obtain a sub-pixel mark map; searching for points to be filled among adjacent points of the bright point of each sub-pixel in the sub-pixel mark map according to the first direction pixel pitch and the second direction pixel pitch in the original image of the sub-pixel, filling the points to be filled to obtain a filling mark map; and obtaining the target sub-pixel mark map based on the sub-pixel mark map and the filling mark map.

Abstract: A selector assembly includes a housing having a spherical cavity and a detent cavity. A positioning sensor is positioned within a sensor cavity and is in communication with the spherical cavity. A selector operates about a center point of the spherical cavity and includes a spheroid member that slidably engages a guide surface of the housing. The spheroid member includes a magnet in electromagnetic communication with the positioning sensor. A first pivot and a second pivot include respective first and second rotational axes that each extend through the center point. A detent pin is biased toward and slidably engages a detent surface of the detent cavity to define a plurality of selector positions of the selector. Operation of the selector within the spherical cavity and along the detent surface defines the plurality of selector positions that are communicated to a controller via the magnet and the positioning sensor.

Abstract: A semiconductor optical device including a buried heterostructure (BH) has reduced parasitic capacitance and reduced inter-diffusion. The semiconductor optical device is manufactured by a regrowth on both sides of a mesa structure with an Fe-doped current blocking layer and an n-type cladding layer outside of an active region in the mesa structure. The Fe-doped current blocking layer and the n-type cladding layer may be disposed and configured such that Fe/Zn inter-diffusion is reduced or prevented by minimal contact between the Fe-doped current blocking layer and a highly Zn-doped cladding layer and by the n-type cladding layer, as will be described in greater detail below. A low Zn-doped or undoped material may be used for a thin cladding layer above the active region in the mesa structure to further suppress Zn/Fe inter-diffusion.

Abstract: A selector assembly includes a housing having a spherical cavity and a detent cavity that form a continuous selector cavity. A selector slidably operates within the selector cavity and about a center point of the spherical cavity. The selector includes a spheroid member that is contained within the spherical cavity and slidably engages a guide surface that defines the spherical cavity. A first pivot includes a first rotational axis that extends through the center point of the spherical cavity. A second pivot includes a second rotational axis that extends through the center point of the spherical cavity. A detent pin is biased toward a detent surface of the detent cavity and slidably engages the detent surface to define a plurality of selector positions of the selector.

Abstract: An aspect of the present disclosure includes a direct modulated laser (DML) with a dielectric current confinement ridge waveguide (RWG) structure. The DML comprises a substrate, one or more layers of material disposed on the substrate to provide a multi quantum well (MQW), first and second insulation/dielectric structures disposed on opposite sides of the MQW, and one or more layers of material disposed on the MQW to provide a mesa structure for receiving a driving current. The mesa structure is preferably disposed between the first and second insulation structures to provide a dielectric current confinement (RWG) structure. The mesa structure further preferably includes an overall width that is greater than the overall width than the active region of the DML that provides the MQW.

Abstract: The present disclosure is generally directed to an EML with a filter layer disposed between an active region of the EML and a substrate of the EML to absorb a portion of unmodulated light energy, and preferably the unmodulated light energy caused by transverse electric (TE) substrate mode. The filter layer preferably comprises a material with an energy band gap (Eg) that is less than the energy band gap of the predetermined channel wavelength to absorb unmodulated laser light.

Abstract: A selector assembly includes a housing having a spherical cavity and a detent cavity that form a continuous selector cavity. A selector slidably operates within the selector cavity and about a center point of the spherical cavity. The selector includes a spheroid member that is contained within the spherical cavity and slidably engages a guide surface that defines the spherical cavity. A first pivot includes a first rotational axis that extends through the center point of the spherical cavity. A second pivot includes a second rotational axis that extends through the center point of the spherical cavity. A detent pin is biased toward a detent surface of the detent cavity and slidably engages the detent surface to define a plurality of selector positions of the selector.

Abstract: A selector assembly includes a housing having a spherical cavity and a detent cavity. A positioning sensor is positioned within a sensor cavity and is in communication with the spherical cavity. A selector operates about a center point of the spherical cavity and includes a spheroid member that slidably engages a guide surface of the housing. The spheroid member includes a magnet in electromagnetic communication with the positioning sensor. A first pivot and a second pivot include respective first and second rotational axes that each extend through the center point. A detent pin is biased toward and slidably engages a detent surface of the detent cavity to define a plurality of selector positions of the selector. Operation of the selector within the spherical cavity and along the detent surface defines the plurality of selector positions that are communicated to a controller via the magnet and the positioning sensor.

Abstract: Disclosed are a method and a device for marking an image position of a sub-pixel of a display screen, and a storage medium. The method includes: obtaining an original image of the sub-pixel of the display screen that has been taken, marking all the sub-pixel bright points in the original image of the sub-pixel to obtain a sub-pixel mark map; searching for points to be filled among adjacent points of the bright point of each sub-pixel in the sub-pixel mark map according to the first direction pixel pitch and the second direction pixel pitch in the original image of the sub-pixel, filling the points to be filled to obtain a filling mark map; and obtaining the target sub-pixel mark map based on the sub-pixel mark map and the filling mark map.

Abstract: The present invention provides a special fertilizer for cut side slope soil remediation in high altitude areas, which is prepared by effectively compounding raw material components of a yak manure-containing compost, an organic micro multi-element fertilizer, a chemical fertilizer, attapulgite powder and sodium alginate under certain conditions. The special fertilizer has obvious effects on the aspects of improving the physicochemical properties of artificial soil at cut side slope wounds in the high altitude areas, increasing the fertilizer efficiency and promoting vegetation restoration.

Abstract: The present invention provides a special fertilizer for cut side slope soil remediation in high altitude areas, which is prepared by effectively compounding raw material components of a yak manure-containing compost, an organic micro multi-element fertilizer, a chemical fertilizer, attapulgite powder and sodium alginate under certain conditions. The special fertilizer has obvious effects on the aspects of improving the physicochemical properties of artificial soil at cut side slope wounds in the high altitude areas, increasing the fertilizer efficiency and promoting vegetation restoration.