Patents by Inventor DAPING YAO

DAPING YAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200020509
    Abstract: Embodiments of a gas delivery apparatus for use in a radio frequency (RF) processing apparatus are provided herein. In some embodiments, a gas delivery apparatus for use in a radio frequency (RF) processing apparatus includes: a conductive gas line having a first end and a second end; a first flange coupled to the first end; a second flange coupled to the second end, wherein the conductive gas line extends through and between the first and second flanges; and a block of ferrite material surrounding the conductive gas line between the first and second flanges.
    Type: Application
    Filed: September 23, 2019
    Publication date: January 16, 2020
    Inventors: DAPING YAO, HYMAN W.H. LAM, JOHN C. FORSTER, JIANG LU, CAN XU, DIEN-YEH WU, PAUL F. MA, MEI CHANG
  • Publication number: 20180151424
    Abstract: In some embodiments, a method of forming a cobalt layer on a substrate disposed in a process chamber, includes: (a) exposing the substrate to a first process gas comprising a cobalt precursor and a hydrogen containing gas to grow a smooth cobalt layer on a first surface of the substrate and on sidewalls and a bottom surface of a feature formed in the first surface of the substrate; (b) purging the first process gas from the process chamber; and (c) annealing the substrate in a hydrogen atmosphere to fill in voids within the cobalt layer to form a void-free cobalt layer. In some embodiments, plasma treating the substrate in gas under low pressure and/or thermally baking the substrate in gas in an atmosphere under a low pressure, may be performed prior to anneal.
    Type: Application
    Filed: November 27, 2017
    Publication date: May 31, 2018
    Inventors: DAPING YAO, JIANG LU, CAN XU, PAUL F. MA, MEI CHANG
  • Publication number: 20180012732
    Abstract: Embodiments of a gas delivery apparatus for use in a radio frequency (RF) processing apparatus are provided herein. In some embodiments, a gas delivery apparatus for use in a radio frequency (RF) processing apparatus includes: a conductive gas line having a first end and a second end; a first flange coupled to the first end; a second flange coupled to the second end, wherein the conductive gas line extends through and between the first and second flanges; and a block of ferrite material surrounding the conductive gas line between the first and second flanges.
    Type: Application
    Filed: July 5, 2017
    Publication date: January 11, 2018
    Inventors: DAPING YAO, HYMAN W.H. LAM, JOHN C. FORSTER, JIANG LU, CAN XU, DIEN-YEH WU, PAUL F. MA, MEI CHANG
  • Publication number: 20130137197
    Abstract: Methods for quantitatively measuring the performance of a plasma immersion process are provided herein. In some embodiments, a method of quantitatively measuring the performance of a plasma immersion process, using a first substrate comprising an oxide layer deposited atop a silicon layer, may include subjecting the first substrate to a plasma immersion process in a first plasma immersion chamber to form a doped oxide layer atop the first substrate; and determining a thickness of the doped oxide layer by shining a beam of light upon a reflective surface of the doped oxide layer; detecting reflected beams of light off of the reflective surface of the doped oxide layer; and analyzing the reflected beams of light to determine the thickness of the doped oxide layer on the first substrate.
    Type: Application
    Filed: November 30, 2011
    Publication date: May 30, 2013
    Applicant: APPLIED MATERIALS, INC.
    Inventors: DAPING YAO, PETER I. PORSHNEV, MARTIN A. HILKENE, MATTHEW D. SCOTNEY-CASTLE, MANOJ VELLAIKAL
  • Publication number: 20120309114
    Abstract: Methods for repairing low-k dielectrics using a plasma immersion carbon doping process are provided herein. In some embodiments, a method of repairing a low-k dielectric material disposed on a substrate having one or more features disposed through the low-k dielectric material may include depositing a conformal oxide layer on the low-k dielectric material and within the one or more features; and doping the conformal oxide layer with carbon using a plasma doping process.
    Type: Application
    Filed: June 1, 2011
    Publication date: December 6, 2012
    Applicant: APPLIED MATERIALS, INC.
    Inventors: DAPING YAO, PETER I. PORSHNEV