Patents by Inventor Da-qian YE

Da-qian YE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nitride underlayer and fabrication method thereof
    Patent number: 10622507
    Abstract: A nitride underlayer includes: a pattern substrate with lattice planes of different growth rates; a nitride nucleating layer over the pattern substrate; a first nitride layer with three-dimensional growth over the nitride nucleating layer, and forming a nanopillar structure at a top of the substrate; a second nitride layer with two-dimensional growth over the first nitride layer, and folding into an uncracked plane over the nanopillar structure.
    Type: Grant
    Filed: September 27, 2018
    Date of Patent: April 14, 2020
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Da-qian Ye, Dongyan Zhang, Chaoyu Wu, Duxiang Wang
  • Light emitting diode and fabrication method thereof
    Patent number: 10431716
    Abstract: A light-emitting diode includes a first-type nitride region, a light-emitting region and a second-type nitride region, wherein the first-type nitride region includes a plurality of alternating first nitride layers and second nitride layers. The second nitride layers have high-doped emitting points pointing to the corresponding first nitride layer. The second-type nitride region includes a plurality of alternating third nitride layers and fourth nitride layers, wherein doping concentration of the fourth nitride layer is higher than that of the third nitride layer, and the fourth nitride layer has high-doped emitting points pointing to the third nitride layer.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: October 1, 2019
    Assignee: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
    Inventors: Liming Shu, Da-qian Ye, Liangjun Wang, Xiaofeng Liu, Chaoyu Wu, Duxiang Wang, Dongyan Zhang, Sha-sha Chen
  • Nitride Underlayer and Fabrication Method Thereof
    Publication number: 20190035969
    Abstract: A nitride underlayer includes: a pattern substrate with lattice planes of different growth rates; a nitride nucleating layer over the pattern substrate; a first nitride layer with three-dimensional growth over the nitride nucleating layer, and forming a nanopillar structure at a top of the substrate; a second nitride layer with two-dimensional growth over the first nitride layer, and folding into an uncracked plane over the nanopillar structure.
    Type: Application
    Filed: September 27, 2018
    Publication date: January 31, 2019
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Da-qian YE, Dongyan ZHANG, Chaoyu WU, Duxiang WANG
  • Light Emitting Diode and Fabrication Method Thereof
    Publication number: 20180138361
    Abstract: A light-emitting diode includes a first-type nitride region, a light-emitting region and a second-type nitride region, wherein the first-type nitride region includes a plurality of alternating first nitride layers and second nitride layers. The second nitride layers have high-doped emitting points pointing to the corresponding first nitride layer. The second-type nitride region includes a plurality of alternating third nitride layers and fourth nitride layers, wherein doping concentration of the fourth nitride layer is higher than that of the third nitride layer, and the fourth nitride layer has high-doped emitting points pointing to the third nitride layer.
    Type: Application
    Filed: January 12, 2018
    Publication date: May 17, 2018
    Applicant: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
    Inventors: Liming SHU, Da-qian YE, Liangjun WANG, Xiaofeng LIU, Chaoyu WU, Duxiang WANG, Dongyan ZHANG, Sha-sha CHEN