Patents by Inventor Daqian ZHANG

Daqian ZHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11936344
    Abstract: This invention relates to a self-excited oscillation suppression device and method for the power amplifying circuit, belonging to the field of electronic technology. Said power amplifying circuit includes a FET and a feedback loop. Said device includes: a first compensation circuit which is connected between a drain and a gate of the FET and a second compensation circuit which is connected in parallel with a feedback resistor of said feedback loop. It can solve self-excited oscillation caused by deep negative feedback in the existing power amplifying circuit. The first compensation circuit can shift the open-loop gain curve forward as a whole, and the second compensation circuit can speed up the closure of the feedback gain curve and the open-loop gain curve so that the two curves will close up before the self-excited oscillation; the self-excited oscillation will be suppressed, and the stability of the power amplifying circuit will be improved.
    Type: Grant
    Filed: August 11, 2020
    Date of Patent: March 19, 2024
    Assignee: SOOCHOW UNIVERSITY
    Inventors: Bowen Zhong, Daqian Zhang
  • Patent number: 11817849
    Abstract: A method and device for adjusting the switching speed of a MOSFET are disclosed. The MOSFET is connected to drive switch, the collector of the drive switch is connected to the grid of the MOSFET through the grid resistor, the emitter of the drive switch is grounded through the emitter resistor, and the collector of the drive switch is also connected to the source resistor through the collector resistor, the other end of the source resistor is connected to the source of the MOSFET; the drain of the MOSFET is connected to the current source. The method comprises: obtaining the adjustment target of the switching speed for the MOSFET, determining the first resistance value of the emitter resistor and/or the second resistance value of the collector resistor based on said adjustment target, controlling the operation of the MOSFET according to the adjusted resistance value.
    Type: Grant
    Filed: August 11, 2020
    Date of Patent: November 14, 2023
    Assignee: SOOCHOW UNIVERSITY
    Inventors: Bowen Zhong, Daqian Zhang, Lining Sun
  • Publication number: 20230304499
    Abstract: The present invention discloses an electric pump for a power battery thermal management system, including a pump body; a motor mounted in the pump body; an impeller mounted in the pump body and driven by the motor, and a liquid heating device mounted in the pump body and configured to heat a liquid sucked from a suction inlet by the impeller and discharged from a discharge outlet.
    Type: Application
    Filed: July 29, 2021
    Publication date: September 28, 2023
    Inventors: Daqian ZHANG, Zhi ZOU, Jingyu ZHAO, Yunxiao LIANG, Yaohui OU
  • Publication number: 20220166420
    Abstract: A method and device for adjusting the switching speed of a MOSFET are disclosed. The MOSFET is connected to drive switch, the collector of the drive switch is connected to the grid of the MOSFET through the grid resistor, the emitter of the drive switch is grounded through the emitter resistor, and the collector of the drive switch is also connected to the source resistor through the collector resistor, the other end of the source resistor is connected to the source of the MOSFET; the drain of the MOSFET is connected to the current source. The method comprises: obtaining the adjustment target of the switching speed for the MOSFET, determining the first resistance value of the emitter resistor and/or the second resistance value of the collector resistor based on said adjustment target, controlling the operation of the MOSFET according to the adjusted resistance value.
    Type: Application
    Filed: August 11, 2020
    Publication date: May 26, 2022
    Inventors: Bowen ZHONG, Daqian ZHANG, Lining SUN
  • Publication number: 20220158593
    Abstract: This invention relates to a self-excited oscillation suppression device and method for the power amplifying circuit, belonging to the field of electronic technology. Said power amplifying circuit includes a FET and a feedback loop. Said device includes: a first compensation circuit which is connected between a drain and a gate of the FET and a second compensation circuit which is connected in parallel with a feedback resistor of said feedback loop. It can solve self-excited oscillation caused by deep negative feedback in the existing power amplifying circuit. The first compensation circuit can shift the open-loop gain curve forward as a whole, and the second compensation circuit can speed up the closure of the feedback gain curve and the open-loop gain curve so that the two curves will close up before the self-excited oscillation; the self-excited oscillation will be suppressed, and the stability of the power amplifying circuit will be improved.
    Type: Application
    Filed: August 11, 2020
    Publication date: May 19, 2022
    Inventors: Bowen ZHONG, Daqian ZHANG