Patents by Inventor Darcy T. Dodt

Darcy T. Dodt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of annealing fully-fabricated, radiation damaged semiconductor devices
    Patent number: 5017508
    Abstract: A method and apparatus for annealing devices having radiation induced damage is disclosed. A device is exposed to electron irradiation to induce damage to the active area. The device is then annealed with a rapid thermal anneal at a low temperature. The rapid thermal anneal may, optionally, be followed by a conventional oven or furnace anneal at a temperature of about 300.degree. to 450.degree. C. The method produces devices having improved and well controlled characteristics such as short circuit operating area, power dissipated during switching, and on-state voltage drop.
    Type: Grant
    Filed: June 29, 1989
    Date of Patent: May 21, 1991
    Assignee: Ixys Corporation
    Inventors: Darcy T. Dodt, Walter R. Buchanan