Patents by Inventor Darin Olsen

Darin Olsen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Carbon nanotube-based structures and methods for removing heat from solid-state devices
    Patent number: 8080871
    Abstract: One aspect of the invention includes a copper substrate; a catalyst on top of the copper substrate surface; and a thermal interface material that comprises a layer containing carbon nanotubes that contacts the catalyst. The carbon nanotubes are oriented substantially perpendicular to the surface of the copper substrate. A Raman spectrum of the layer containing carbon nanotubes has a D peak at ˜1350 cm?1 with an intensity ID, a G peak at ˜1585 cm?1 with an intensity IG, and an intensity ratio ID/IG of less than 0.7 at a laser excitation wavelength of 514 nm. The thermal interface material has: a bulk thermal resistance, a contact resistance at an interface between the thermal interface material and the copper substrate, and a contact resistance at an interface between the thermal interface material and a solid-state device. A summation of these resistances has a value of 0.06 cm2K/W or less.
    Type: Grant
    Filed: July 22, 2008
    Date of Patent: December 20, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Carlos Dangelo, Ephraim Suhir, Subrata Dey, Barbara Wacker, Yuan Xu, Arthur Boren, Darin Olsen, Yi Zhang, Peter Schwartz, Bala Padmakumar
  • Carbon Nanotube-Based Structures and Methods for Removing Heat from Solid-State Devices
    Publication number: 20110103020
    Abstract: One aspect of the invention includes a copper substrate; a catalyst on top of the copper substrate surface; and a thermal interface material that comprises a layer containing carbon nanotubes that contacts the catalyst. The carbon nanotubes are oriented substantially perpendicular to the surface of the copper substrate. A Raman spectrum of the layer containing carbon nanotubes has a D peak at ˜1350 cm?1 with an intensity ID, a G peak at ˜1585 cm?1 with an intensity IG, and an intensity ratio ID/IG of less than 0.7 at a laser excitation wavelength of 514 nm. The thermal interface material has: a bulk thermal resistance, a contact resistance at an interface between the thermal interface material and the copper substrate, and a contact resistance at an interface between the thermal interface material and a solid-state device. A summation of these resistances has a value of 0.06 cm2K/W or less.
    Type: Application
    Filed: July 22, 2008
    Publication date: May 5, 2011
    Inventors: Carlos Dangelo, Ephraim Suhir, Subrata Dey, Barbara Wacker, Yuan Xu, Arthur Boren, Darin Olsen, Yi Zhang, Peter Schwartz, Bala Padmakumar