Patents by Inventor Dario Ripamonti

Dario Ripamonti has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • INTEGRATED ELECTRONIC CIRCUIT INCLUDING A FIELD PLATE FOR THE LOCAL REDUCTION OF THE ELECTRIC FIELD AND RELATED MANUFACTURING PROCESS
    Publication number: 20220384585
    Abstract: An integrated electronic circuit including: a dielectric body delimited by a front surface; A top conductive region of an integrated electronic circuit extend within a dielectric body having a front surface. A passivation structure including a bottom portion and a top portion laterally delimits an opening. The bottom portion extends on the front surface, and the top portion extends on the bottom portion. A field plate includes an internal portion and an external portion. The internal portion is located within the opening and extends on the top portion of the passivation structure. The external portion extends laterally with respect to the top portion of the passivation structure and contacts at a bottom one of: the dielectric body or the bottom portion of the passivation structure. The opening and the external portion are arranged on opposite sides of the top portion of the passivation structure.
    Type: Application
    Filed: May 25, 2022
    Publication date: December 1, 2022
    Applicant: STMicroelectronics S.r.l.
    Inventors: Elisabetta PIZZI, Dario RIPAMONTI, Matteo PATELMO, Fabrizio Fausto Renzo TOIA, Simone Dario MARIANI
  • Diode with reduced recovery time for applications subject to the current recirculation phenomenon and/or to fast voltage variations
    Patent number: 9911869
    Abstract: A diode comprising a semiconductor body delimited by a front surface and including: a first semiconductor region having a first type of conductivity, facing at least in part the front surface; and a second semiconductor region having a second type of conductivity, the second semiconductor region facing at least in part the front surface and surrounding, at a distance, at least part of the first semiconductor region. The diode further includes: a trench, which extends in the semiconductor body starting from the front surface, for surrounding at least part of the second semiconductor region; and a lateral insulation region, which is arranged within the trench, is formed by dielectric material and contacts at least in part the second semiconductor region.
    Type: Grant
    Filed: August 29, 2016
    Date of Patent: March 6, 2018
    Assignee: STMICROELECTRONICS S.R.L.
    Inventors: Marco Sambi, Dario Ripamonti, Davide Ugo Ghisu, Dario Bianchi
  • DIODE WITH REDUCED RECOVERY TIME FOR APPLICATIONS SUBJECT TO THE CURRENT RECIRCULATION PHENOMENON AND/OR TO FAST VOLTAGE VARIATIONS
    Publication number: 20170263784
    Abstract: A diode comprising a semiconductor body delimited by a front surface and including: a first semiconductor region having a first type of conductivity, facing at least in part the front surface; and a second semiconductor region having a second type of conductivity, the second semiconductor region facing at least in part the front surface and surrounding, at a distance, at least part of the first semiconductor region. The diode further includes: a trench, which extends in the semiconductor body starting from the front surface, for surrounding at least part of the second semiconductor region; and a lateral insulation region, which is arranged within the trench, is formed by dielectric material and contacts at least in part the second semiconductor region.
    Type: Application
    Filed: August 29, 2016
    Publication date: September 14, 2017
    Inventors: Marco Sambi, Dario Ripamonti, Davide Ugo Ghisu, Dario Bianchi