Abstract: An apparatus for processing semiconductor wafers includes at least a wet bench and an automatic handling system of a wafer carrier removably connected thereto. The wet bench includes a first processing tank, a second processing tank and a third processing tank, separated from one another, each processing tank being dedicated to a different chemical, as well as a special cleaning and drying tank for processing the automatic handling system when the wafer carrier has been removed.

Abstract: An apparatus for processing semiconductor wafers includes at least a wet bench and an automatic handling system of a wafer carrier removably connected thereto. The wet bench includes a first processing tank, a second processing tank and a third processing tank, separated from one another, each processing tank being dedicated to a different chemical, as well as a special cleaning and drying tank for processing the automatic handling system when the wafer carrier has been removed.

Abstract: An apparatus for processing semiconductor wafers includes at least a wet bench and an automatic handling system of a wafer carrier removably connected thereto. The wet bench includes a first processing tank, a second processing tank and a third processing tank, separated from one another, each processing tank being dedicated to a different chemical, as well as a special cleaning and drying tank for processing the automatic handling system when the wafer carrier has been removed.

Abstract: A method for forming electrical-contact interface regions on a wafer including a silicon-carbide substrate having a surface with at least one conductive region facing the surface. The method includes forming a first and a second resist layer; forming; removing portions of the second resist layer to form a through opening partially aligned to the conductive region; removing, selective portions of the first resist layer to expose the surface of the substrate; removing portions of the first resist layer that extend laterally staggered with respect to the through opening; depositing a nickel layer on the wafer to form a nickel region on the substrate in an area corresponding to the conductive region; removing the first and second resist layers; and carrying out a step of thermal treatment of the wafer to form nickel-silicide regions in electrical contact with the conductive region.

Abstract: A method for forming electrical-contact interface regions on a wafer including a silicon-carbide substrate having a surface with at least one conductive region facing the surface. The method includes forming a first and a second resist layer; forming; removing portions of the second resist layer to form a through opening partially aligned to the conductive region; removing, selective portions of the first resist layer to expose the surface of the substrate; removing portions of the first resist layer that extend laterally staggered with respect to the through opening; depositing a nickel layer on the wafer to form a nickel region on the substrate in an area corresponding to the conductive region; removing the first and second resist layers; and carrying out a step of thermal treatment of the wafer to form nickel-silicide regions in electrical contact with the conductive region.

Abstract: An apparatus for processing semiconductor wafers includes at least a wet bench and an automatic handling system of a wafer carrier removably connected thereto. The wet bench includes a first processing tank, a second processing tank and a third processing tank, separated from one another, each processing tank being dedicated to a different chemical, as well as a special cleaning and drying tank for processing the automatic handling system when the wafer carrier has been removed.