Patents by Inventor Darrel C. Oglesby, Jr.

Darrel C. Oglesby, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer
    Patent number: 6815801
    Abstract: The present invention provides a vertical bipolar transistor 110, a method of manufacture therefor, and an integrated circuit including the same. The vertical bipolar transistor 110 may include, in one embodiment, a second epitaxial layer 140 located over a first epitaxial layer 130, wherein the second epitaxial layer includes at least two dopant profiles 143, 147. The vertical bipolar transistor 110 may further include a collector 154, a base 156 and an emitter 158 located over or within the second epitaxial layer 140.
    Type: Grant
    Filed: February 28, 2003
    Date of Patent: November 9, 2004
    Assignee: Texas Instrument Incorporated
    Inventors: Gregory G. Romas, Darrel C. Oglesby, Jr., Scott F. Jasper, Philip Najfus, Venkatesh Govindaraju, ChunLiang Yeh, James Lisenby
  • Buried zener diode structure and method of manufacture
    Patent number: 6706606
    Abstract: A buried Zener diode structure and method of manufacture requires no additional process steps beyond those required in a basic standard bipolar flow with up-down isolation. The buried Zener diode has its N++/P+ junction removed from the silicon surface.
    Type: Grant
    Filed: June 19, 2003
    Date of Patent: March 16, 2004
    Assignee: Texas Instruments Incorporated
    Inventors: Gregory G. Romas, Jr., Darrel C. Oglesby, Jr.
  • Buried Zener diode structure and method of manufacture
    Patent number: 6605859
    Abstract: A buried Zener diode structure and method of manufacture requires no additional process steps beyond those required in a basic standard bipolar flow with up-down isolation. The buried Zener diode has its N++/P+ junction removed from the silicon surface.
    Type: Grant
    Filed: June 27, 2002
    Date of Patent: August 12, 2003
    Assignee: Texas Instruments Incorporated
    Inventors: Gregory G. Romas, Jr., Darrel C. Oglesby, Jr.