Abstract: Methods for creating a memory device can include depositing a sense layer, patterning the sense layer to form a plurality of magnetic data cells, depositing a separation layer over the plurality of data cells, depositing a reference layer over the separation layer, and patterning the reference layer to form an elongated magnetic reference cell wherein the elongated magnetic reference cell extends uninterrupted along more than one of the plurality of magnetic data cells.

Abstract: A tape guide that has textured surface over which the tape passes. The textured surface has a surface roughness exceeding the flying height of the tape above the surface. This new irregular surface topography reduces the air bearing and allows limited contact between the tape guide and the tape while minimizing tape distortion that can occur with other surface topographies.

Abstract: Methods for creating a memory device can include depositing a sense layer, patterning the sense layer to form a plurality of magnetic data cells, depositing a separation layer over the plurality of data cells, depositing a reference layer over the separation layer, and patterning the reference layer to form an elongated magnetic reference cell wherein the elongated magnetic reference cell extends uninterrupted along more than one of the plurality of magnetic data cells.

Abstract: In one embodiment, a memory device includes a plurality of magnetic data cells and a magnetic reference cell extending uninterrupted along more than one of the plurality of data cells.

Abstract: Embodiments of the present invention provide a magnetic memory. In one embodiment, the magnetic memory comprises a magnetic memory cell and a conductor configured to provide a magnetic field to write the magnetic memory cell. Structure is configured to direct the magnetic field and reduce coercivity of the magnetic memory cell.

Abstract: A tape guide that has textured surface over which the tape passes. The textured surface has a surface roughness exceeding the flying height of the tape above the surface. This new irregular surface topography reduces the air bearing and allows limited contact between the tape guide and the tape while minimizing tape distortion that can occur with other surface topographies.

Abstract: A memory device includes a material layer associated with at least one memory cell. The material layer is alterable to change the electrical resistance of the memory cell.

Abstract: A memory device includes a first surface having memory chips disposed thereon, the memory chips defining an exterior face of the memory device, and a second surface opposite the exterior face. A magnetically permeable shield layer extends over at least one of the exterior face and the second surface of the memory device.

Abstract: A semiconductor substrate is provided over which electrically conductive columns are formed along with electrically conductive rows crossing over the electrically conductive columns. A plurality of memory components are formed each having a resistance value corresponding to multiple logical bits and non-volatile memory cells are each formed by connecting a memory component between an electrically conductive row and an electrically conductive column.

Abstract: A memory device includes a material layer associated with at least one memory cell. The material layer is alterable to change the electrical resistance of the memory cell.

Abstract: A tape guide that has textured surface over which the tape passes. The textured surface has a surface roughness exceeding the flying height of the tape above the surface. This new irregular surface topography reduces the air bearing and allows limited contact between the tape guide and the tape while minimizing tape distortion that can occur with other surface topographies.

Abstract: Embodiments of the present invention provide a magnetic memory. In one embodiment, the magnetic memory comprises a magnetic memory cell and a conductor configured to provide a magnetic field to write the magnetic memory cell. Structure is configured to direct the magnetic field and reduce coercivity of the magnetic memory cell.

Abstract: A magnetic random access memory device uses toroid-like magnetic memory cells. An axial opening extends through each of the memory cells and is generally aligned along a first axis. A first conductor and a second conductor pass through the axial opening of each memory cell and are generally aligned with the first axis.

Abstract: In one embodiment, a memory device includes a plurality of magnetic data cells and a magnetic reference cell extending uninterrupted along more than one of the plurality of data cells.

Abstract: Embodiments of the present invention provide a magnetic memory. In one embodiment, the magnetic memory comprises a magnetic memory cell and a conductor configured to provide a magnetic field to write the magnetic memory cell. Structure is configured to direct the magnetic field and reduce coercivity of the magnetic memory cell.

Abstract: A tape guide that has textured surface over which the tape passes. The textured surface has a surface roughness exceeding the flying height of the tape above the surface. This new irregular surface topography reduces the air bearing and allows limited contact between the tape guide and the tape while minimizing tape distortion that can occur with other surface topographies.

Abstract: A head cleaning device that utilizes a cleaning pad in which a multiplicity of fibers are integrated into and project from a backing by, for example, sewing or weaving the fibers into the backing. Preferably, the fibers and backing are made from an electrically conductive or statically dissipative material to minimize electro-static charge build up. The cleaning device may be incorporated into a tape drive that includes a transducer head, tape guides configured to guide the tape over the head and a cleaning mechanism. The cleaning mechanism, which is configured to engage the head, includes the cleaning pad mounted to a carrier disposed near the head. The cleaning pad is constructed of a multiplicity of fibers integrated into and projecting from the backing.

Abstract: A memory cell includes a magnetic data storage layer, a magnetic reference layer, and an insulating layer between the data storage layer and the reference layer. A resistive layer having a known electrical resistance is positioned adjacent the insulating layer.

Abstract: In one embodiment, a memory device includes a plurality of magnetic data cells and a magnetic reference cell extending uninterrupted along more than one of the plurality of data cells.

Abstract: A semiconductor substrate is provided over which electrically conductive columns are formed along with electrically conductive rows crossing over the electrically conductive columns. A plurality of memory components are formed each having a resistance value corresponding to multiple logical bits and non-volatile memory cells are each formed by connecting a memory component between an electrically conductive row and an electrically conductive column.