Patents by Inventor Darrell D. Watkins

Darrell D. Watkins has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for the preparation of an epitaxial silicon wafer with intrinsic gettering
    Patent number: 6666915
    Abstract: This invention is directed to a novel process for the preparation of a silicon wafer comprising a surface having an epitaxial layer deposited thereon. In one embodiment, an epitaxial layer is deposited onto a surface of a silicon wafer. The wafer is also heated to a temperature of at least about 1175° C. This heat treatment begins either during or after the epitaxial deposition. Following the heat treatment, the heated wafer is cooled for a period of time at a rate of at least about 10° C./sec while (a) the temperature of the wafer is greater than about 1000° C., and (b) the wafer is not in contact with a susceptor. In this process, the epitaxial deposition, heating, and cooling are conducted in the same reactor chamber.
    Type: Grant
    Filed: March 19, 2003
    Date of Patent: December 23, 2003
    Assignee: MEMC Electronic Materials, Inc.
    Inventors: Charles Chiun-Chieh Yang, Darrell D. Watkins, Jr.
  • Method for the preparation of an epitaxial silicon wafer with intrinsic gettering
    Publication number: 20030159650
    Abstract: This invention is directed to a novel process for the preparation of a silicon wafer comprising a surface having an epitaxial layer deposited thereon. In one embodiment, an epitaxial layer is deposited onto a surface of a silicon wafer. The wafer is also heated to a temperature of at least about 1175° C. This heat treatment begins either during or after the epitaxial deposition. Following the heat treatment, the heated wafer is cooled for a period of time at a rate of at least about 10° C./sec while (a) the temperature of the wafer is greater than about 1000° C., and (b) the wafer is not in contact with a susceptor. In this process, the epitaxial deposition, heating, and cooling are conducted in the same reactor chamber.
    Type: Application
    Filed: March 19, 2003
    Publication date: August 28, 2003
    Applicant: MEMC Electronic Materials, Inc.
    Inventors: Charles Chiun-Chieh Yang, Darrell D. Watkins
  • METHOD FOR THE PREPARATION OF AN EPITAXIAL SILICON WAFER WITH INTRINSIC GETTERING
    Publication number: 20030051656
    Abstract: This invention is directed to a novel process for the preparation of a silicon wafer comprising a surface having an epitaxial layer deposited thereon. In one embodiment, an epitaxial layer is deposited onto a surface of a silicon wafer. The wafer is also heated to a temperature of at least about 1175° C. This heat treatment begins either during or after the epitaxial deposition. Following the heat treatment, the heated wafer is cooled for a period of time at a rate of at least about 10° C./sec while (a) the temperature of the wafer is greater than about 1000° C., and (b) the wafer is not in contact with a susceptor. In this process, the epitaxial deposition, heating, and cooling are conducted in the same reactor chamber.
    Type: Application
    Filed: June 14, 1999
    Publication date: March 20, 2003
    Inventors: CHARLES CHIUN-CHIEH YANG, DARRELL D. WATKINS JR