Abstract: An interconnect structure of a semiconductor device includes a tungsten plug (14) deposited in a via or contact window (11). A barrier layer (15) separates the tungsten plug (14) from the surface of a dielectric material (16) within which the contact window or via (11) is formed. The barrier layer (15) is a composite of at least two films. The first film formed on the surface of the dielectric material (16) within the via (11) is a tungsten silicide film (12). The second film is a tungsten film (13) formed on the tungsten silicide film (12). A tungsten plug (14) is formed on the tungsten film (13) to complete interconnect structure. The barrier layer (15) is deposited using a sputtering technique performed in a deposition chamber. The chamber includes tungsten silicide target (19) from which the tungsten silicide film (12) is deposited, and a tungsten coil (20) from which the tungsten film (20) is deposited.

Abstract: A chemical mechanical polishing (CMP) process using a chemically active slurry having a polarity selected to affect the relative oxidation rates of respective crystalline planes of a polycrystalline surface being polished. The slurry polarity is controlled to equilibrate the material removal rates from the respective crystalline planes during the CMP process. A polar solute may be added to a base solvent to achieve the desired polarity. A CMP process for a tungsten film may utilize a water-based slurry containing an abrasive agent, an oxidizing agent, and a solute having a polarity less than that of water. The abrasive agent may be colloidal silica, the oxidizing agent may be hydrogen peroxide, and the solute may be benzene.

Abstract: A chemical mechanical polishing (CMP) process using a chemically active slurry having a polarity selected to affect the relative oxidation rates of respective crystalline planes of a polycrystalline surface being polished. The slurry polarity is controlled to equilibrate the material removal rates from the respective crystalline planes during the CMP process. A polar solute may be added to a base solvent to achieve the desired polarity. A CMP process for a tungsten film may utilize a water-based slurry containing an abrasive agent, an oxidizing agent, and a solute having a polarity less than that of water. The abrasive agent may be colloidal silica, the oxidizing agent may be hydrogen peroxide, and the solute may be benzene.

Abstract: A liner and method of forming a liner for a tungsten plug in a semiconductor device which reduces cost and improves reliability. In one aspect, it has been discovered that by depositing an initial film of titanium using any conventional process such as CVD, PVD or IMP (ion metal plasma) and then heating the device in a nitrogen atmosphere to a temperature of about 450 degrees C., a thin protective layer of titanium nitride can be form on the surface of the initial film. The protective layer has been found to be uniform in density and avoids the irregularities occurring in deposited titanium nitride. The thickness of the TiN layer can be controlled by controlling the time duration of the annealing process and by controlling the pressure of the nitrogen in the annealing tool. Using this two step method, the integrity of the titanium nitride layer is preserved and the formation of volcanoes is avoided.

Abstract: An interconnect structure of a semiconductor device includes a tungsten plug (14) deposited in a via or contact window (11). A barrier layer (15) separates the tungsten plug (14) from the surface of a dielectric material (16) within which the contact window or via (11) is formed. The barrier layer (15) is a composite of at least two films. The first film formed on the surface of the dielectric material (16) within the via (11) is a tungsten silicide film (12). The second film is a tungsten film (13) formed on the tungsten silicide film (12). A tungsten plug (14) is formed on the tungsten film (13) to complete interconnect structure. The barrier layer (15) is deposited using a sputtering technique performed in a deposition chamber. The chamber includes tungsten silicide target (19) from which the tungsten silicide film (12) is deposited, and a tungsten coil (20) from which the tungsten film (20) is deposited.

Abstract: A layer of doped or undoped germanosilicate glass is formed on a substrate and the layer of germanosilicate glass is thermally treated in steam to remove germanium from the germanosilicate glass, and thereby raise the reflow temperature of the germanosilicate glass so treated. The layer of germanosilicate glass on the substrate may be a nonplanar layer of germanosilicate glass. When thermally treating the nonplanar layer of germanosilicate glass in steam, the layer of germanosilicate glass may be planarized simultaneously with the removal of germanium from the planarized germanosilicate glass. This process may be repeated to create a hierarchy of reflowed glass where each underlying layer reflows at a higher temperature than the next deposited glass layer. The steam thermal treatment step may be preceded by a thermal pretreatment of the layer of germanosilicate glass in at least one of a noble gas and nitrogen gas, to reflow the layer of germanosilicate glass.

Abstract: A layer of doped or undoped germanosilicate glass is formed on a substrate and the layer of germanosilicate glass is thermally treated in steam to remove germanium from the germanosilicate glass, and thereby raise the reflow temperature of the germanosilicate glass so treated. The layer of germanosilicate glass on the substrate may be a nonplanar layer of germanosilicate glass. When thermally treating the nonplanar layer of germanosilicate glass in steam, the layer of germanosilicate glass may be planarized simultaneously with the removal of germanium from the planarized germanosilicate glass. This process may be repeated to create a hierarchy of reflowed glass where each underlying layer reflows at a higher temperature than the next deposited glass layer. The steam thermal treatment step may be preceded by a thermal pretreatment of the layer of germanosilicate glass in at least one of a noble gas and nitrogen gas, to reflow the layer of germanosilicate glass.