Abstract: A method suitable for etching hydrophilic trenches into a substrate, such as silicon, is provided. The method comprises etching and sidewall passivation processes for achieving anisotropy. Sidewalls of the etched trench are made hydrophilic during the etch by virtue of a hydrophilizing dopant in a passivating gas plasma. The method is useful for etching ink supply channels in inkjet printheads.

Abstract: A method of removing a polymeric coating from sidewalls of an etched trench defined in a silicon wafer is provided. The method comprises etching the wafer in a biased plasma etching chamber using an O2 plasma. The chamber temperature is in the range of 90 to 180° C.

Abstract: A process for facilitating modification of an etched trench is provided. The process comprises: (a) providing a wafer comprising an etched trench, the trench having a photoresist plug at its base; and (b) removing a portion of the photoresist by subjecting the wafer to a biased oxygen plasma etch. The process is particularly suitable for preparing a trench for subsequent argon ion milling. Printhead integrated circuits fabricated by a process according to the invention have improved ink channel surface profiles and/or surface properties.

Abstract: A process for modifying the surface profile of an ink supply channel in a printhead is provided. The process comprises the steps of providing a printhead comprising ink supply channels, and ion milling the ink supply channel. The ion milling is generally performed with argon and tends to taper and/or round angular sidewall features in the channel.

Abstract: A method of etching a silicon layer in a plasma etching reactor to form an ultra deep opening is disclosed. The method includes the steps of providing a semiconductor substrate including the silicon layer into the plasma etching reactor and flowing an etching gas that includes an oxygen reactant gas, a helium gas, and an inert bombardment-enhancing gas into the plasma etching reactor. The method further includes striking a plasma using the etchant gas chemistry, and then providing an additive gas having SF6 into the plasma etching reactor subsequent to striking the plasma. The method continues with etching an opening at least partially through the silicon layer using this plasma.

Abstract: A method of etching a silicon layer in a plasma etching reactor to form an ultra deep opening is disclosed. The method includes the steps of providing a semiconductor substrate including the silicon layer into the plasma etching reactor and flowing an etching gas that includes an oxygen reactant gas, a helium gas, and an inert bombardment-enhancing gas into the plasma etching reactor. The method further includes striking a plasma using the etchant gas chemistry, and then providing an additive gas having SF6 into the plasma etching reactor subsequent to striking the plasma. The method continues with etching an opening at least partially through the silicon layer using this plasma.