Abstract: A semiconductor device includes ferromagnetic, magnetostrictive layer that exhibits a biaxial magnetic anisotropy and an underlying structure exhibits a spin Hall effect to provide a conversion between electrical energy and magnetic energy with more than two distinctive magnetic states, wherein the underlying structure includes a piezoelectric material structure and a spin Hall metal layer.

Abstract: This patent document provides implementations and examples of circuits and devices based on low-energy consumption semiconductor structures exhibiting multi-valued states. In one aspect, a semiconductor device is configured to comprise: a multi-layer structure forming a magnetoelectric or multiferroic system to include a ferromagnetic, magnetostrictive layer that exhibits a biaxial magnetic anisotropy and an underlying metal structure exhibits a spin Hall effect to provide a conversion between electrical energy and magnetic energy with more than two distinctive magnetic states.

Abstract: A ferroelectric device includes a substrate, a first electrode on the substrate, and a hexagonal ferroelectric material on the first electrode. The first electrode comprises a single crystal epitaxial material. By using a single crystal epitaxial material for an electrode to a hexagonal ferroelectric material, a high-quality material interface may be provided between these layers, thereby improving the performance of the ferroelectric device by allowing for a reduced coercive field.

Abstract: The invention relates to a method for growing a bulk single crystal, wherein the method comprises the steps of inserting a starting material into a crucible, melting the starting material in the crucible by heating the starting material, arranging a thermal insulation lid at a distance above a melt surface of said melt such that at least a central part of the melt surface is covered by the lid, and growing the bulk single crystal from the melt by controllably cooling the melt with the thermal insulation lid arranged above the melt surface.

Abstract: A ferroelectric device includes a substrate, a first electrode on the substrate, and a hexagonal ferroelectric material on the first electrode. The first electrode comprises a single crystal epitaxial material. By using a single crystal epitaxial material for an electrode to a hexagonal ferroelectric material, a high-quality material interface may be provided between these layers, thereby improving the performance of the ferroelectric device by allowing for a reduced coercive field.

Abstract: The invention relates to a method for growing a bulk single crystal, wherein the method comprises the steps of inserting a starting material into a crucible, melting the starting material in the crucible by heating the starting material, arranging a thermal insulation lid at a distance above a melt surface of said melt such that at least a central part of the melt surface is covered by the lid, and growing the bulk single crystal from the melt by controllably cooling the melt with the thermal insulation lid arranged above the melt surface.

Abstract: A perovskite-based thin film structure includes a semiconductor substrate layer, such as a crystalline silicon layer, having a top surface cut at an angle to the (001) crystal plane of the crystalline silicon. A perovskite seed layer is epitaxially grown on the top surface of the substrate layer. An overlayer of perovskite material is epitaxially grown above the seed layer. In some embodiments the perovskite overlayer is a piezoelectric layer grown to a thickness of at least 0.5 ?m and having a substantially pure perovskite crystal structure, preferably substantially free of pyrochlore phase, resulting in large improvements in piezoelectric characteristics as compared to conventional thin film piezoelectric materials.

Abstract: A semiconductor device includes a semiconductor substrate, a first oxide layer on the semiconductor substrate including an element from the semiconductor substrate, and a second oxide layer on the first oxide layer opposite the semiconductor substrate. The second oxide layer includes a stoichiometric, single-phase complex oxide represented by the formula: AhBjOk, or equivalently (AmOn)a(BqOr)b in which the elemental oxide components, (AmOn) and (BqOr) are combined so that h=j or, equivalently, ma=bq, and a, b, h, j, k, m, n, q and r are non-zero integers; and wherein: A is an element of the lanthanide rare earth elements of the periodic table or the trivalent elements from cerium to lutetium; and B is an element of the transition metal elements of groups IIIB, IVB or VB of the periodic table.

Abstract: A strained thin film structure includes a substrate layer formed of a crystalline scandate material having a top surface, and a strained layer of crystalline ferroelectric epitaxially grown with respect to the crystalline substrate layer so as to be in a strained state and at a thickness below which dislocations begin to occur in the crystalline ferroelectric layer. An intermediate layer may be grown between the top surface of the substrate layer and the ferroelectric layer wherein the intermediate layer carries the lattice structure of the underlying substrate layer. The properties of the ferroelectric film are greatly enhanced as compared to the bulk ferroelectric material, and such films are suitable for use in applications including ferroelectric memories.

Abstract: A method for manufacturing a high Tc superconducting circuit elements is disclosed, which comprises the steps of preparing a single crystal conductive substrate of Sr.sub.2 RuO.sub.4 by a floating zone melting process; epitaxially growing on the (001)-surface of the Sr.sub.2 RuO.sub.4 substrate a high Tc copper oxide-based superconducting film with a thickness of 1 to 1000 nm; depositing metal pads onto said superconducting film to form electrical contacts; and applying a metal pad to the surface of the substrate to form an electrical contact.

Abstract: These superconducting circuit elements, namely SNS heterostructures, such as, e.g. Josephson junctions and field-effect transistors, have a sandwich structure consisting of at least one layer of high-T.sub.c superconductor material arranged adjacent to a metallic substrate, possibly with an insulating layer in between, the substrate, the superconductor and--if present--the insulator all consisting of materials having at least approximately matching molecular structures and lattice constants. Electrical contacts, such as source, drain and gate electrodes are attached to the superconductor layer and to the substrate, respectively. The electrically conductive substrate consists of a metallic oxide such as strontium ruthenate Sr.sub.2 RuO.sub.4, whereas the superconductor layer is of the copper oxide type and may be YBa.sub.2 Cu.sub.3 O.sub.7-.delta., for example. The insulator layer (10) may consist of SrTiO.sub.3.

Abstract: An inverted MISFET structure with a high transition temperature superconducting channel comprises a gate substrate, an interfacial layer with one or more elements of the VIII or IB subgroup of the periodic table of elements, an insulating layer and a high transition temperature superconducting channel. An electric field, generated by a voltage applied to its gate alters the conductivity of the channel.