Abstract: Systems and techniques are described herein for processing video data. For instance, a technique can include receiving a first image after a previous image. The process can further include receiving a first segmentation mask associated with the previous image. The process can also include estimating a first set of forward motion vectors between the previous image and the first image. The process can further include estimating a reliability of the first set of forward motion vectors. The process can also include extrapolating a second segmentation mask associated with the first image using the first set of forward motion vectors and first segmentation mask based on the estimated reliability of the first set of forward motion vectors.

Abstract: Methods and systems for the electrochemical finishing of SiC wafers. Embodiments of these methods use an applied electrical bias, an electrolytic oxidant removal solution and light to remove raised surface features and imperfections of an SiC wafer.

Abstract: A composition contains filler particles dispersed in a matrix material, wherein the matrix material includes: (a) a first polyorganosiloxane that comprises an average of 2 or more succinic anhydride groups per molecule; and (b) a second polyorganosiloxane other than the first polyorganosiloxane; wherein the filler particles are present at a concentration in a range of 15 to 80 volume-percent based on composition volume and wherein the first polyorganosiloxane is present at a concentration sufficient to provide succinic anhydride groups at a concentration of 0.30 to 200 micromoles per gram of matrix material.

Abstract: A highly thermally conductive composition is provided, such composition comprising: (A) An organopolysiloxane composition; (B) a filler treating agent; (C) a thermal stabilizer; and (D) thermally conductive filler mixture, comprising: (D-1) a small-particulate thermally conductive filler having a mean size of up to 3 ?m, (D-2) spherical aluminum nitride having a mean size of from 50 to 150 ?m, (D-3) boron nitride having a mean size of from 20 to 200 ?m.

Abstract: A composition contains: (a) a first polyorganosiloxane; (b) 50-80 volume percent, based on composition volume, of conductive fillers; and (c) 0.1 to 2.0 weight-percent, based on composition weight, of a second polyorganosiloxane different from the first polyorganosiloxane, the second polyorganosiloxane having an average of 0.5 to 1.5 anhydride groups per molecule.

Abstract: A composition contains: (a) curable silicone composition including: (i) a vinyldimethylsiloxy-terminated polydimethylpolysiloxane with a viscosity of 30 to 400 mPa*s; (ii) a SiH functional crosslinker; and (iii) a hydrosilylation catalyst; where the molar ratio of crosslinker SiH functionality to vinyl functionality is 0.5:1 to 1:1; (b) alkyl trialkoxysilane and/or a mono-trialkoxysiloxy terminated dimethylpolysiloxane treating agent; (c) filler mix containing: (i) 40 wt % or more of spherical and irregular shaped AlN particles, both having an average size of 30 micrometers or more, the spherical AlN fillers are 40-60 wt % of the weight of the AlN fillers; (ii) 25-35 wt % spherical Al2O3 particles with an average size of 1-5 micrometers; (iii) 10-15 wt % of additional thermally conductive filler with a 0.1-0.

Abstract: A composition contains the following components: (a) 15 to 49.8 volume-percent of a first polysiloxane that is has a viscosity in a range of 50 centiStokes to 550 Stokes as determined according to ASTM D4283-98; (b) 0.2 to 5 volume-percent of an organoclay; (c) 50-74 volume-percent roundish or crushed thermally conductive fillers including: (i) 5 to 15 volume-percent small thermally conductive fillers having a median particle size in a range of 0.1 to 1.0 micrometers; (ii) 10 to 25 volume-percent medium thermally conductive fillers having a median particle size in a range of 1.1 to 5.0 micrometers; (iii) 25 to 50 volume-percent large thermally conductive fillers having a median particle size in a range of 5.1 to 50 micrometers; and (d) 0 to 5 volume-percent of an alkoxy functional linear polysiloxane different from the first polysiloxane and/or an alkoxy functional linear silane; where volume-percent values are relative to composition volume.

Abstract: A composition comprising an isocyanate composition comprising a polyisocyanate and a specific thermally conductive filler composition (C) can further be part of a two-component curable composition comprising the isocyanate composition and a polyol composition and having a low viscosity upon admixing and upon cure provides a high thermal conductivity.

Abstract: A doped SiOC liquid starting material provides a p-type polymer derived ceramic SiC crystalline materials, including boules and wafers. P-type SiC electronic devices. Low resistivity SiC crystals, wafers and boules, having phosphorous as a dopant. Polymer derived ceramic doped SiC shaped charge source materials for vapor deposition growth of doped SiC crystals.

Abstract: A doped SiOC liquid starting material provides a p-type polymer derived ceramic SiC crystalline materials, including boules and wafers. P-type SiC electronic devices. Low resistivity SiC crystals, wafers and boules, having phosphorous as a dopant. Polymer derived ceramic doped SiC shaped charge source materials for vapor deposition growth of doped SiC crystals.

Abstract: A doped SiOC liquid starting material provides a p-type polymer derived ceramic SiC crystalline materials, including boules and wafers. P-type SiC electronic devices. Low resistivity SiC crystals, wafers and boules, having phosphorous as a dopant. Polymer derived ceramic doped SiC shaped charge source materials for vapor deposition growth of doped SiC crystals.

Abstract: A composition contains the following components: (a) 15 to 49.8 volume-percent of a first polysiloxane that is has a viscosity in a range of 50 centiStokes to 550 Stokes as determined according to ASTM D4283-98; (b) 0.2 to 5 volume-percent of an organoclay; (c) 50-74 volume-percent roundish or crushed thermally conductive fillers including: (i) 5 to 15 volume-percent small thermally conductive fillers having a median particle size in a range of 0.1 to 1.0 micrometers; (ii) 10 to 25 volume-percent medium thermally conductive fillers having a median particle size in a range of 1.1 to 5.0 micrometers; (iii) 25 to 50 volume-percent large thermally conductive fillers having a median particle size in a range of 5.1 to 50 micrometers; and (d) 0 to 5 volume-percent of an alkoxy functional linear polysiloxane different from the first polysiloxane and/or an alkoxy functional linear silane; where volume-percent values are relative to composition volume.

Abstract: A highly thermally conductive composition is provided, such composition comprising: (A) An organopolysiloxane composition; (B) a filler treating agent; (C) a thermal stabilizer; and (D) thermally conductive filler mixture, comprising: (D-1) a small-particulate thermally conductive filler having a mean size of up to 1 ?m, (D-2) middle-sized filler having a mean size of from 1 to 10 ?m, (D-3) large filler having a mean size of larger than 30 ?m and comprising at least magnesium oxide.

Abstract: A highly thermally conductive composition is provided, such composition comprising: (A) An organopolysiloxane composition; (B) a filler treating agent; (C) a thermal stabilizer; and (D) thermally conductive filler mixture, comprising: (D-1) a small-particulate thermally conductive filler having a mean size of up to 3 ?m, (D-2) spherical aluminum nitride having a mean size of from 50 to 150 ?m, (D-3) boron nitride having a mean size of from 20 to 200 ?m.

Abstract: A method of forming an SiC crystal including placing in an insulated graphite container a seed crystal of SiC, and supporting the seed crystal on a shelf, wherein cushion rings contact the seed crystal on a periphery of top and bottom surfaces of the seed crystal, and where the graphite container does not contact a side surface of the seed crystal; placing a source of Si and C atoms in the insulated graphite container, where the source of Si and C atoms is for transport to the seed crystal to grow the SiC crystal; placing the graphite container in a furnace; heating the furnace; evacuating the furnace; filling the furnace with an inert gas; and maintaining the furnace to support crystal growth to thereby form the SiC crystal.

Abstract: A method for producing silicon carbide substrates fit for epitaxial growth in a standard epitaxial chamber normally used for silicon wafers processing. Strict limitations are placed on any substrate that is to be processed in a chamber normally used for silicon substrates, so as to avoid contamination of the silicon wafers. To take full advantage of standard silicon processing equipment, the SiC substrates are of diameter of at least 150 mm. For proper growth of the SiC boule, the growth crucible is made to have interior volume that is six to twelve times the final growth volume of the boule. Also, the interior volume of the crucible is made to have height to width ratio of 0.8 to 4.0. Strict limits are placed on contamination, particles, and defects in each substrate.

Abstract: A method of forming an SiC crystal including placing in an insulated graphite container a seed crystal of SiC, and supporting the seed crystal on a shelf, wherein cushion rings contact the seed crystal on a periphery of top and bottom surfaces of the seed crystal, and where the graphite container does not contact a side surface of the seed crystal; placing a source of Si and C atoms in the insulated graphite container, where the source of Si and C atoms is for transport to the seed crystal to grow the SiC crystal; placing the graphite container in a furnace; heating the furnace; evacuating the furnace; filling the furnace with an inert gas; and maintaining the furnace to support crystal growth to thereby form the SiC crystal.

Abstract: A method of forming an SiC crystal including placing in an insulated graphite container a seed crystal of SiC, and supporting the seed crystal on a shelf, wherein cushion rings contact the seed crystal on a periphery of top and bottom surfaces of the seed crystal, and where the graphite container does not contact a side surface of the seed crystal; placing a source of Si and C atoms in the insulated graphite container, where the source of Si and C atoms is for transport to the seed crystal to grow the SiC crystal; placing the graphite container in a furnace; heating the furnace; evacuating the furnace; filling the furnace with an inert gas; and maintaining the furnace to support crystal growth to thereby form the SiC crystal.

Abstract: A method for producing silicon carbide substrates fit for epitaxial growth in a standard epitaxial chamber normally used for silicon wafers processing. Strict limitations are placed on any substrate that is to be processed in a chamber normally used for silicon substrates, so as to avoid contamination of the silicon wafers. To take full advantage of standard silicon processing equipment, the SiC substrates are of diameter of at least 150 mm. For proper growth of the SiC boule, the growth crucible is made to have interior volume that is six to twelve times the final growth volume of the boule. Also, the interior volume of the crucible is made to have height to width ratio of 0.8 to 4.0. Strict limits are placed on contamination, particles, and defects in each substrate.

Abstract: A method for producing silicon carbide substrates fit for epitaxial growth in a standard epitaxial chamber normally used for silicon wafers processing. Strict limitations are placed on any substrate that is to be processed in a chamber normally used for silicon substrates, so as to avoid contamination of the silicon wafers. To take full advantage of standard silicon processing equipment, the SiC substrates are of diameter of at least 150 mm. For proper growth of the SiC boule, the growth crucible is made to have interior volume that is six to twelve times the final growth volume of the boule. Also, the interior volume of the crucible is made to have height to width ratio of 0.8 to 4.0. Strict limits are placed on contamination, particles, and defects in each substrate.