Patents by Inventor Darren V. Young

Darren V. Young has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Recessed access devices and gate electrodes
    Patent number: 9502516
    Abstract: Recessed access transistor devices used with semiconductor devices may include gate electrodes having materials with multiple work functions, materials that are electrically isolated from each other and supplied with two or more voltage supplies, or materials that create a diode junction within the gate electrode.
    Type: Grant
    Filed: April 8, 2014
    Date of Patent: November 22, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Jasper S. Gibbons, Darren V. Young, Kunal R. Parekh, Casey Smith
  • RECESSED ACCESS DEVICES AND GATE ELECTRODES
    Publication number: 20140217498
    Abstract: Recessed access transistor devices used with semiconductor devices may include gate electrodes having materials with multiple work functions, materials that are electrically isolated from each other and supplied with two or more voltage supplies, or materials that create a diode junction within the gate electrode.
    Type: Application
    Filed: April 8, 2014
    Publication date: August 7, 2014
    Applicant: Micron Technology, Inc.
    Inventors: Jasper S. Gibbons, Darren V. Young, Kunal R. Parekh, Casey Smith
  • Recessed memory cell access devices and gate electrodes
    Patent number: 8692320
    Abstract: Recessed access transistor devices used with semiconductor devices may include gate electrodes having materials with multiple work functions, materials that are electrically isolated from each other and supplied with two or more voltage supplies, or materials that create a diode junction within the gate electrode.
    Type: Grant
    Filed: October 18, 2011
    Date of Patent: April 8, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Jasper S. Gibbons, Darren V. Young, Kunal R. Parekh, Casey Smith
  • RECESSED MEMORY CELL ACCESS DEVICES AND GATE ELECTRODES
    Publication number: 20120061751
    Abstract: Recessed access transistor devices used with semiconductor devices may include gate electrodes having materials with multiple work functions, materials that are electrically isolated from each other and supplied with two or more voltage supplies, or materials that create a diode junction within the gate electrode.
    Type: Application
    Filed: October 18, 2011
    Publication date: March 15, 2012
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Jasper S. Gibbons, Darren V. Young, Kunal R. Parekh, Casey Smith
  • Communications cable and method for making same
    Patent number: 6844500
    Abstract: A flat communication cable is provided having one or more pairs of data conductor wires, which are single wires as opposed to twisted pairs, with each pair of conductors co-extruded and encased within an inner jacket. Shielding is provided around the inner jackets and encased within an outer jacket together with appropriate power leads and drain lines.
    Type: Grant
    Filed: January 6, 2003
    Date of Patent: January 18, 2005
    Assignee: ConectL Corporation
    Inventors: Roger D. Williams, Darren V. Young
  • Communications cable and method for making same
    Publication number: 20030132022
    Abstract: A flat communication cable is provided having one or more pairs of data conductor wires, which are single wires as opposed to twisted pairs, with each pair of conductors co-extruded and encased within an inner jacket. Shielding is provided around the inner jackets and encased within an outer jacket together with appropriate power leads and drain lines.
    Type: Application
    Filed: January 6, 2003
    Publication date: July 17, 2003
    Applicant: ConectL Corporation
    Inventors: Roger D. Williams, Darren V. Young