Abstract: A new phosphinimine polymerization catalyst exhibits restricted rotation about a carbon-phosphorous bond. The restricted rotation is demonstrated using variable temperature 1H NMR. Ethylene copolymers made using the catalysts have microstructures which are dependent on the temperature at which polymerization takes place.

Abstract: A new phosphinimine polymerization catalyst exhibits restricted rotation about a carbon-phosphorous bond. The restricted rotation is demonstrated using variable temperature 1H NMR. Ethylene copolymers made using the catalysts have microstructures which are dependent on the temperature at which polymerization takes place.

Abstract: By controlling the ratio of catalyst components or the type of activator the homogeneity of a polymer produced using a single site catalyst may be improved.

Abstract: By controlling the ratio of catalyst components or the type of activator the homogeneity of a polymer produced using a single site catalyst may be improved.

Abstract: Ethylene copolymers having a relatively high melt flow ratio and a multimodal profile in a temperature rising elution fractionation (TREF) plot are disclosed. The copolymers can be made into film having good dart impact values and good stiffness properties under decreased extruder pressures.

Abstract: A phosphinimine catalyst immobilized on a passivated inorganic oxide support, had high activity at low co-catalyst concentrations and gave, under gas phase polymerization conditions, ethylene copolymer with a high molecular weight. A method of making a passivated silica support involves treatment of silica with an organoaluminum compound, a diorganomagnesium compound and a source of chloride (to make MgCl2) under anhydrous conditions and in the absence of polar solvents.

Abstract: A phosphinimine catalyst immobilized on a passivated inorganic oxide support, had high activity at low co-catalyst concentrations and gave, under gas phase polymerization conditions, ethylene copolymer with a high molecular weight. A method of making a passivated silica support involves treatment of silica with an organoaluminum compound, a diorganomagnesium compound and a source of chloride (to make MgCl2) under anhydrous conditions and in the absence of polar solvents.

Abstract: Ethylene copolymers having a relatively high melt flow ratio and a multimodal profile in a temperature rising elution fractionation (TREF) plot are disclosed. The copolymers can be made into film having good dart impact values and good stiffness properties under decreased extruder pressures.

Abstract: A phosphinimine catalyst immobilized on a passivated inorganic oxide support, had high activity at low co-catalyst concentrations and gave, under gas phase polymerization conditions, ethylene copolymer with a high molecular weight. A method of making a passivated silica support involves treatment of silica with an organoaluminum compound, a diorganomagnesium compound and a source of chloride (to make MgCl2) under anhydrous conditions and in the absence of polar solvents.

Abstract: Ethylene copolymers having a relatively high melt flow ratio and a multimodal profile in a temperature rising elution fractionation (TREF) plot are disclosed. The copolymers can be made into film having good dart impact values and good stiffness properties under decreased extruder pressures.

Abstract: Ethylene copolymers having a relatively high melt flow ratio and a multimodal profile in a temperature rising elution fractionation (TREF) plot are disclosed. The copolymers can be made into film having good dart impact values and good stiffness properties under decreased extruder pressures.

Abstract: Compounds 1,3,4-(SiMe3)(C6F5)(alkyl)C5H3 are made using a simplified synthetic strategy which is readily scalable. On reaction with a suitable transition metal species, a 1,3,4-(SiMe3)(C6F5)(alkyl)C5H3 molecule provides an organotransition metal complex comprising a 1,2-(C6F5)(alkyl) substituted cyclopentadienyl ligand, which is active toward olefin polymerization.

Abstract: Ethylene copolymers having a relatively high melt flow ratio and a multimodal profile in a temperature rising elution fractionation (TREF) plot are disclosed. The copolymers can be made into film having good dart impact values and good stiffness properties under decreased extruder pressures.

Abstract: Ethylene copolymers having a relatively high melt flow ratio and a multimodal profile in a temperature rising elution fractionation (TREF) plot are disclosed. The copolymers can be made into film having good dart impact values and good stiffness properties under decreased extruder pressures.

Abstract: Compounds 1,3,4-(SiMe3)(C6F5)(alkyl)C5H3 are made using a simplified synthetic strategy which is readily scalable. On reaction with a suitable transition metal species, a 1,3,4-(SiMe3)(C6F5)(alkyl)C5H3 molecule provides an organotransition metal complex comprising a 1,2-(C6F5)(alkyl) substituted cyclopentadienyl ligand, which is active toward olefin polymerization.

Abstract: Surface preparation of a compound semiconductor surface, such as indium antimonide (InSb), with a triflating agent, such as triflic anhydride or a trifluoroacetylating agent, such as trifluoroacetic anhydride is described. In one embodiment, the triflating or trifluoroacetylating passivates the compound semiconductor surface by terminating the surface with triflate trifluoroacetate groups. In a further embodiment, a triflating agent or trifluoroacetylating agent is employed to first convert a thin native oxide present on a compound semiconductor surface to a soluble species. In another embodiment, the passivated compound semiconductor surface is activated in an ALD chamber by reacting the triflate or trifluoroacetate protecting groups with a protic source, such as water (H2O). Metalorganic precursors are then introduced in the ALD chamber to form a good quality interfacial layer, such as aluminum oxide (Al2O3), on the compound semiconductor surface.

Abstract: In one embodiment, a method comprises providing a chemical phase deposition copper precursor within a chemical phase deposition chamber; and depositing a metal film onto a substrate with the copper precursor by a chemical phase deposition process.

Abstract: Surface preparation of a compound semiconductor surface, such as indium antimonide (InSb), with a triflating agent, such as triflic anhydride or a trifluoroacetylating agent, such as trifluoroacetic anhydride is described. In one embodiment, the triflating or trifluoroacetylating passivates the compound semiconductor surface by terminating the surface with triflate trifluoroacetate groups. In a further embodiment, a triflating agent or trifluoroacetylating agent is employed to first convert a thin native oxide present on a compound semiconductor surface to a soluble species. In another embodiment, the passivated compound semiconductor surface is activated in an ALD chamber by reacting the triflate or trifluoroacetate protecting groups with a protic source, such as water (H2O). Metalorganic precursors are then introduced in the ALD chamber to form a good quality interfacial layer, such as aluminum oxide (Al2O3), on the compound semiconductor surface.

Abstract: An iridium precursor, and an iridium layer from the precursor is described. The Ir(I) in the precursor becomes Ir(III) in a reduction pathway before forming an Ir(0) layer.

Abstract: A method for depositing a copper seed layer onto a semiconductor substrate comprises applying a SCuD plating bath onto a surface of a substrate, rinsing the surface with an organic solvent, applying a co-reactant bath to the surface, and again rinsing the surface with an organic solvent. The SCuD plating bath is non-aqueous and comprises a copper precursor that is dissolved into an organic solvent. The co-reactant bath is also non-aqueous and comprises a co-reactant dissolved into an organic solvent. The SCuD plating bath may be heated before being applied to the substrate surface.