Patents by Inventor Darryl L. Smith

Darryl L. Smith has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20020167003
    Abstract: An organic self-assembled transistor uses an organic self-assembled monolayer as the active semiconductor layer in which the conducting channel is formed. The monolayer is exposed to the atmosphere; thereby making the voltage characteristics of the transistor, such as mobility and density of charge carriers, very sensitive to vapor molecules. The chemical specificity and strength of interaction of the monolayer is tuned by varying the chemical end group of the organic molecules comprising the monolayer. Varying the chemical end groups allows fabrication of large transistor arrays easily tailored for sensor array or electronic nose applications. The monolayer is also compatible with known low-cost VLSI silicon fabrication processes.
    Type: Application
    Filed: April 18, 2001
    Publication date: November 14, 2002
    Inventors: Ian H. Campbell, Darryl L. Smith
  • Patent number: 4912355
    Abstract: A strain gage comprising a strained-layer superlattice crystal exhibiting piezoelectric properties is described. A substrate upon which such a strained-layer superlattice crystal has been deposited is attached to an element to be monitored for strain. A light source is focused on the superlattice crystal and the light reflected from, passed through, or emitted from the crystal is gathered and compared with previously obtained optical property data to determine the strain in the element.
    Type: Grant
    Filed: June 28, 1988
    Date of Patent: March 27, 1990
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Bruce W. Noel, Darryl L. Smith, Dipen N. Sinha
  • Patent number: 4614957
    Abstract: An improved electromagnetic radiation-sensitive semiconductor device together with a method of making same is disclosed in which surface regions directly beneath the active portion of the electrical contacts are provided with a layer of semiconductor material having a higher bandgap than the radiation sensitive material which repels minority carriers but allows the passage of majority carriers. Because the rate of annihilation of minority carriers at the contact to which they are attracted is reduced, the responsivity of the detector is greatly enhanced.
    Type: Grant
    Filed: December 4, 1984
    Date of Patent: September 30, 1986
    Assignee: Honeywell Inc.
    Inventors: David K. Arch, M. Walter Scott, Darryl L. Smith, Leonard R. Weisberg, R. Andrew Wood