Patents by Inventor Darsen Lu

Darsen Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9034715
    Abstract: A finFET and method of fabrication are disclosed. A sacrificial layer is formed on a bulk semiconductor substrate. A top semiconductor layer (such as silicon) is disposed on the sacrificial layer. The bulk semiconductor substrate is recessed in the area adjacent to the transistor gate and a stressor layer is formed in the recessed area. The sacrificial layer is selectively removed and replaced with an insulator, such as a flowable oxide. The insulator provides isolation between the transistor channel and the bulk substrate without the use of dopants.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: May 19, 2015
    Assignee: International Business Machines Corporation
    Inventors: Yanfeng Wang, Dechao Guo, Darsen Lu, Philip J. Oldiges, Gan Wang, Xin Wang
  • Publication number: 20140264591
    Abstract: A finFET and method of fabrication are disclosed. A sacrificial layer is formed on a bulk semiconductor substrate. A top semiconductor layer (such as silicon) is disposed on the sacrificial layer. The bulk semiconductor substrate is recessed in the area adjacent to the transistor gate and a stressor layer is formed in the recessed area. The sacrificial layer is selectively removed and replaced with an insulator, such as a flowable oxide. The insulator provides isolation between the transistor channel and the bulk substrate without the use of dopants.
    Type: Application
    Filed: March 12, 2013
    Publication date: September 18, 2014
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Yanfeng Wang, Dechao Guo, Darsen Lu, Philip J. Oldiges, Gan Wang, Xin Wang