Patents by Inventor Darshan Thakare
Darshan Thakare has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240026527Abstract: A method of forming a high aspect ratio structure within a 3D NAND structure is provided. The method includes delivering a precursor to a high aspect ratio opening disposed within a multilayer stack having two or more alternating layers. The precursor is selected from the group consisting of a diaminosilane, an aminosilane, and a combination thereof. The method includes delivering an oxygen-containing compound to the high aspect ratio opening. The precursor and the oxygen-containing compound are alternated cyclically to fill the high aspect ratio opening.Type: ApplicationFiled: July 20, 2023Publication date: January 25, 2024Applicant: Applied Materials, Inc.Inventors: Geetika BAJAJ, Supriya GHOSH, Susmit Singha ROY, Darshan THAKARE, Gopi Chandran RAMACHANDRAN, Bhaskar Jyoti BHUYAN, Abhijit B. MALLICK
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Publication number: 20230420486Abstract: Exemplary methods of semiconductor processing may include providing a first precursor to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The first precursor may include one or more of niobium, tantalum, or titanium. The methods may include contacting the substrate with the first precursor. The contacting may form a layer of metal on the substrate. The methods may include providing a second precursor to a semiconductor processing chamber. The second precursor comprises oxygen. The methods may include contacting the layer of metal with the second precursor. The contacting may form a layer of metal oxide on the substrate. The layer of metal oxide may be one or more of niobium oxide, tantalum oxide, or titanium oxide.Type: ApplicationFiled: June 12, 2023Publication date: December 28, 2023Applicant: Applied Materials, Inc.Inventors: Geetika Bajaj, Shonal Chouksey, Amit Kumar Roy, Darshan Thakare, Seshadri Ganguli, Gopi Chandran Ramachandran, Srinivas Gandikota, Jayeeta Sen
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Publication number: 20230077895Abstract: Disclosed in some embodiments is a chamber component (such as an end effector body) coated with an ultrathin electrically-dissipative material to provide a dissipative path from the coating to the ground. The coating may be deposited via a chemical precursor deposition to provide a uniform, conformal, and porosity free coating in a cost effective manner. In an embodiment wherein the chamber component comprises an end effector body, the end effector body may further comprise replaceable contact pads for supporting a substrate and the contact surface of the contact pads head may also be coated with an electrically-dissipative material.Type: ApplicationFiled: November 10, 2022Publication date: March 16, 2023Inventors: Gayatri Natu, Geetika Bajaj, Prerna Goradia, Darshan Thakare, David Fenwick, XiaoMing He, Sanni Seppaelae, Jennifer Sun, Rajkumar Thanu, Jeff Hudgens, Karuppasamy Muthukamatchy, Arun Dhayalan
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Patent number: 11547030Abstract: Disclosed in some embodiments is a chamber component (such as an end effector body) coated with an ultrathin electrically-dissipative material to provide a dissipative path from the coating to the ground. The coating may be deposited via a chemical precursor deposition to provide a uniform, conformal, and porosity free coating in a cost effective manner. In an embodiment wherein the chamber component comprises an end effector body, the end effector body may further comprise replaceable contact pads for supporting a substrate and the contact surface of the contact pads head may also be coated with an electrically-dissipative material.Type: GrantFiled: June 2, 2020Date of Patent: January 3, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Gayatri Natu, Geetika Bajaj, Prerna Goradia, Darshan Thakare, David Fenwick, XiaoMing He, Sanni Seppaelae, Jennifer Sun, Rajkumar Thanu, Jeff Hudgens, Karuppasamy Muthukamatchy, Arun Dhayalan
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Patent number: 11540432Abstract: Disclosed in some embodiments is a chamber component (such as an end effector body) coated with an ultrathin electrically-dissipative material to provide a dissipative path from the coating to the ground. The coating may be deposited via a chemical precursor deposition to provide a uniform, conformal, and porosity free coating in a cost effective manner. In an embodiment wherein the chamber component comprises an end effector body, the end effector body may further comprise replaceable contact pads for supporting a substrate and the contact surface of the contact pads head may also be coated with an electrically-dissipative material.Type: GrantFiled: June 2, 2020Date of Patent: December 27, 2022Assignee: Applied Materials, Inc.Inventors: Gayatri Natu, Geetika Bajaj, Prerna Goradia, Darshan Thakare, David Fenwick, XiaoMing He, Sanni Seppaelae, Jennifer Sun, Rajkumar Thanu, Jeff Hudgens, Karuppasamy Muthukamatchy, Arun Dhayalan
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Publication number: 20220277936Abstract: The present disclosure relates to protective multilayer coatings for processing clumbers and processing clumber components. In one embodiment, a multilayer protean e coating includes a metal nitride layer and an oxide layer disposed thereon. In one embodiment, the multilayer protective coating further includes an oxynitride interlayer and/or an oxy fluoride layer. The multilayer protective coating may be formed on a metal alloy or ceramic substrate, such as a processing clumber or a processing clumber component used in tire field of electronic device manufacturing, e.g., semiconductor device manufacturing. In one embodiment, the metal nitride layer and the oxide layer are deposited on the substrate by atomic layer deposition.Type: ApplicationFiled: June 22, 2020Publication date: September 1, 2022Inventors: Geetika BAJAJ, Yogita PAREEK, Darshan THAKARE, Prerna Sonthalia GORADIA, Ankur KADAM, Kevin A. PAPKE
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Publication number: 20220267904Abstract: Methods of depositing a metal film by exposing a substrate surface to a halide precursor and an organosilane reactant are described. The halide precursor comprises a compound of general formula (I): MQzRm, wherein M is a metal, Q is a halogen selected from Cl, Br, F or I, z is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and m is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) or general formula (III): wherein R1, R2, R3, R4, R5, R6, R7, R8, Ra, Rb, Rc, Rd, Re, and Rf are independently selected from hydrogen (H), substituted alkyl or unsubstituted alkyl; and X, Y, X?, and Y? are independently selected from nitrogen (N) and carbon (C).Type: ApplicationFiled: May 3, 2022Publication date: August 25, 2022Applicant: Applied Materials, Inc.Inventors: Geetika Bajaj, Darshan Thakare, Prerna Sonthalia Goradia, Robert Jan Visser, Yixiong Yang, Jacqueline S. Wrench, Srinivas Gandikota
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Patent number: 11390947Abstract: A method of forming a fluorinated metal film is provided. The method includes positioning an object in an atomic layer deposition (ALD) chamber having a processing region, depositing a metal-oxide containing layer on an object using an atomic layer deposition (ALD) process, depositing a metal-fluorine layer on the metal-oxide containing layer using an activated fluorination process, and repeating the depositing the metal-oxide containing layer and the depositing the metal-oxide containing layer until a fluorinated metal film with a predetermined film thickness is formed. The activated fluorination process includes introducing a first flow of a fluorine precursor (FP) to the processing region. The FP includes at least one organofluorine reagent or at least one fluorinated gas.Type: GrantFiled: February 25, 2020Date of Patent: July 19, 2022Assignee: Applied Materials, Inc.Inventors: Nitin Deepak, Suresh Chand Seth, Prerna Sonthalia Goradia, Geetika Bajaj, Darshan Thakare, Jennifer Y. Sun, Gayatri Natu
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Patent number: 11359282Abstract: Methods of depositing a metal film by exposing a substrate surface to a halide precursor and an organosilane reactant are described. The halide precursor comprises a compound of general formula (I): MQzRm, wherein M is a metal, Q is a halogen selected from Cl, Br, F or I, z is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and m is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) or general formula (III): wherein R1, R2, R3, R4, R5, R6, R7, R8, Ra, Rb, Rc, Rd, Re, and Rf are independently selected from hydrogen (H), substituted alkyl or unsubstituted alkyl; and X, Y, X?, and Y? are independently selected from nitrogen (N) and carbon (C).Type: GrantFiled: August 12, 2020Date of Patent: June 14, 2022Assignee: Applied Materials, Inc.Inventors: Geetika Bajaj, Darshan Thakare, Prerna Goradia, Robert Jan Visser, Yixiong Yang, Jacqueline S. Wrench, Srinivas Gandikota
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Publication number: 20220049353Abstract: Methods of depositing a metal film by exposing a substrate surface to a halide precursor and an organosilane reactant are described. The halide precursor comprises a compound of general formula (I): MQzRm, wherein M is a metal, Q is a halogen selected from Cl, Br, F or I, z is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and m is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) or general formula (III): wherein R1, R2, R3, R4, R5, R6, R7, R8, Ra, Rb, Rc, Rd, Re, and Rf are independently selected from hydrogen (H), substituted alkyl or unsubstituted alkyl; and X, Y, X?, and Y? are independently selected from nitrogen (N) and carbon (C).Type: ApplicationFiled: August 12, 2020Publication date: February 17, 2022Applicant: Applied Materials, Inc.Inventors: Geetika Bajaj, Darshan Thakare, Prerna Goradia, Robert Jan Visser, Yixiong Yang, Jacqueline S. Wrench, Srinivas Gandikota
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Publication number: 20210100141Abstract: Disclosed in some embodiments is a chamber component (such as an end effector body) coated with an ultrathin electrically-dissipative material to provide a dissipative path from the coating to the ground. The coating may be deposited via a chemical precursor deposition to provide a uniform, conformal, and porosity free coating in a cost effective manner. In an embodiment wherein the chamber component comprises an end effector body, the end effector body may further comprise replaceable contact pads for supporting a substrate and the contact surface of the contact pads head may also be coated with an electrically-dissipative material.Type: ApplicationFiled: June 2, 2020Publication date: April 1, 2021Inventors: Gayatri Natu, Geetika Bajaj, Prerna Goradia, Darshan Thakare, David Fenwick, XiaoMing He, Sanni Seppaelae, Jennifer Sun, Rajkumar Thanu, Jeff Hudgens, Karuppasamy Muthukamatchy, Arun Dhayalan
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Publication number: 20210100087Abstract: Disclosed in some embodiments is a chamber component (such as an end effector body) coated with an ultrathin electrically-dissipative material to provide a dissipative path from the coating to the ground. The coating may be deposited via a chemical precursor deposition to provide a uniform, conformal, and porosity free coating in a cost effective manner. In an embodiment wherein the chamber component comprises an end effector body, the end effector body may further comprise replaceable contact pads for supporting a substrate and the contact surface of the contact pads head may also be coated with an electrically-dissipative material.Type: ApplicationFiled: June 2, 2020Publication date: April 1, 2021Inventors: Gayatri Natu, Geetika Bajaj, Prerna Goradia, Darshan Thakare, David Fenwick, XiaoMing He, Sanni Seppaelae, Jennifer Sun, Rajkumar Thanu, Jeff Hudgens, Karuppasamy Muthukamatchy, Arun Dhayalan
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Publication number: 20200283897Abstract: Embodiments described herein provide a method of forming amorphous a fluorinated metal film. The method includes positioning an object in an atomic layer deposition (ALD) chamber having a processing region, depositing a metal-oxide containing layer on an object using an atomic layer deposition (ALD) process, depositing a metal-fluorine layer on the metal-oxide containing layer using an activated fluorination process, and repeating the depositing the metal-oxide containing layer and the depositing the metal-oxide containing layer until a fluorinated metal film with a predetermined film thickness is formed. The activated fluorination process includes introducing a first flow of a fluorine precursor (FP) to the processing region. The FP includes at least one organofluorine reagent or at least one fluorinated gas.Type: ApplicationFiled: February 25, 2020Publication date: September 10, 2020Inventors: Nitin DEEPAK, Suresh Chand SETH, Prerna Sonthalia GORADIA, Geetika BAJAJ, Darshan THAKARE, Jennifer Y. SUN, Gayatri NATU
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Patent number: 10280507Abstract: Systems and methods for forming films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a liquid solution made from a solvent and a deposition precursor. A carrier gas may be flowed through the liquid solution and push the droplets toward a substrate placed in a substrate processing region. The droplets pass into the substrate processing region and chemically react with the substrate to form films. The temperature of the substrate may be maintained below the boiling temperature of the solvent during film formation. The solvent imparts a flowability to the forming film and enable the depositing film to flow along the surface of a patterned substrate during formation prior to solidifying. The flowable film results in bottom-up gapfill inside narrow high-aspect ratio gaps in the patterned substrate.Type: GrantFiled: May 14, 2018Date of Patent: May 7, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Ranga Rao Arnepalli, Darshan Thakare, Abhijit Basu Mallick, Pramit Manna, Robert Jan Visser, Prerna Sonthalia Goradia, Nilesh Chimanrao Bagul
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Publication number: 20180350604Abstract: Embodiments of the disclosure relate to methods of selectively depositing or etching conductive materials from a substrate comprising conductive materials and nonconductive materials. More particularly, embodiments of the disclosure are directed to methods of using electrical bias and aerosol assisted chemical vapor deposition to deposit metal on conductive metal pillars. Additional embodiments of the disclosure relate to methods of using electrical bias and aerosol assisted chemical vapor deposition to etch metal from conductive metal pillars.Type: ApplicationFiled: May 30, 2018Publication date: December 6, 2018Inventors: Robert Jan Visser, Prerna Goradia, Tapash Chakraborty, Ranga Rao Arnepalli, Darshan Thakare, Geetika Bajaj
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Publication number: 20180298492Abstract: Systems and methods for forming films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a liquid solution made from a solvent and a deposition precursor. A carrier gas may be flowed through the liquid solution and push the droplets toward a substrate placed in a substrate processing region. The droplets pass into the substrate processing region and chemically react with the substrate to form films. The temperature of the substrate may be maintained below the boiling temperature of the solvent during film formation. The solvent imparts a flowability to the forming film and enable the depositing film to flow along the surface of a patterned substrate during formation prior to solidifying. The flowable film results in bottom-up gapfill inside narrow high-aspect ratio gaps in the patterned substrate.Type: ApplicationFiled: May 14, 2018Publication date: October 18, 2018Applicant: APPLIED MATERIALS, INC.Inventors: Ranga Rao Arnepalli, Darshan Thakare, Abhijit Basu Mallick, Pramit Manna, Robert Jan Visser, Prerna Sonthalia Goradia, Nilesh Chimanrao Bagul
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Publication number: 20180236633Abstract: A method of polishing includes bringing a metal layer of a substrate into contact with a polishing pad, generating relative motion between the substrate and the polishing pad, and while the metal layer is in contact with the polishing pad and the substrate is moving relative to the polishing pad, alternating between supplying a first polishing liquid and a second polishing liquid to an interface between the metal layer. The first polishing liquid is abrasive-free and includes an oxidizer, and the second polishing liquid includes abrasive particles and a complexing compound to complex with ions of the metal of the metal layer.Type: ApplicationFiled: April 3, 2017Publication date: August 23, 2018Inventors: Ranga Rao Arnepalli, Sudhanshu Singh, Darshan Thakare, Prerna Goradia, Robert Jan Visser
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Patent number: 10017856Abstract: Systems and methods for forming films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a liquid solution made from a solvent and a deposition precursor. A carrier gas may be flowed through the liquid solution and push the droplets toward a substrate placed in a substrate processing region. The droplets pass into the substrate processing region and chemically react with the substrate to form films. The temperature of the substrate may be maintained below the boiling temperature of the solvent during film formation. The solvent imparts a flowability to the forming film and enable the depositing film to flow along the surface of a patterned substrate during formation prior to solidifying. The flowable film results in bottom-up gapfill inside narrow high-aspect ratio gaps in the patterned substrate.Type: GrantFiled: April 17, 2017Date of Patent: July 10, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Ranga Rao Arnepalli, Darshan Thakare, Abhijit Basu Mallick, Pramit Manna, Robert Jan Visser, Prerna Sonthalia Goradia, Nilesh Chimanrao Bagul
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Publication number: 20170298252Abstract: A slurry for chemical mechanical planarization includes a surfactant, and abrasive particles having an average diameter between 20 and 30 nm and an outer surface of ceria. The abrasive particles are formed using a hydrothermal synthesis process. The abrasive particles are between 0.1 and 3 wt % of the slurry.Type: ApplicationFiled: October 9, 2015Publication date: October 19, 2017Inventors: Ranga Rao Arnepalli, Robert Jan Visser, Rajeev Bajaj, Darshan Thakare, Prerna Goradia, Uday Mahajan, Abdul Wahab Mohammed