Abstract: A microelectronic device includes semiconductor device with a component at a front surface of the semiconductor device and a backside heat spreader layer on a back surface of the semiconductor device. The backside heat spreader layer is 100 nanometers to 3 microns thick, has an in-plane thermal conductivity of at least 150 watts/meter-° K, and an electrical resistivity less than 100 micro-ohm-centimeters.

Abstract: A microelectronic device includes semiconductor device with a component at a front surface of the semiconductor device and a backside heat spreader layer on a back surface of the semiconductor device. The backside heat spreader layer is 100 nanometers to 3 microns thick, has an in-plane thermal conductivity of at least 150 watts/meter-° K, and an electrical resistivity less than 100 micro-ohm-centimeters.

Abstract: A microelectronic device includes semiconductor device with a component at a front surface of the semiconductor device and a backside heat spreader layer on a back surface of the semiconductor device. The backside heat spreader layer is 100 nanometers to 3 microns thick, has an in-plane thermal conductivity of at least 150 watts/meter-° K, and an electrical resistivity less than 100 micro-ohm-centimeters.

Abstract: A microelectronic device includes semiconductor device with a component at a front surface of the semiconductor device and a backside heat spreader layer on a back surface of the semiconductor device. The backside heat spreader layer is 100 nanometers to 3 microns thick, has an in-plane thermal conductivity of at least 150 watts/meter-° K, and an electrical resistivity less than 100 micro-ohm-centimeters.

Abstract: In a method and system for evaluating sub-critical fatigue crack growth in a semiconductor device, a plurality of energy pulses generated by an energy source are repeatedly impinged onto the semiconductor device for a predefined time interval. The repeated impinging of the plurality of energy pulses induces a mechanical stress within the semiconductor device. The induced mechanical stress, maintained below a threshold and repeated for a predefined number of cycles, causes a formation of a sub-critical fatigue crack within the semiconductor device. A detector detects the presence of the sub-critical fatigue crack leading to a fatigue failure. A rapid determination of a pass or fail status for a fatigue test of the semiconductor device is made by comparing a total number of cycles to fatigue failure to a predefined benchmark.

Abstract: A metal interconnect structure (100) comprising a bond pad (101), which has copper with at least 70 volume percent composed of crystal grains expanding more than 1 ?m in their main direction, and 30 or less volume percent composed of crystal grains, which expand less than 1 ?m in their main crystal direction. A body (102) of tin alloy is in contact with the bond pad.

Abstract: A custom-molded heat sink corresponds to an individual substrate and includes a heat sink lid having at least one cavity corresponding to at least one die mounted on a substrate. A conductive layer is deposited in the at least one cavity that substantially fills the space between the at least one cavity and the at least one die when the lid is coupled to the substrate.

Abstract: A device comprising a first die enclosed in a wafer scale package, said first die adapted to mate with a printed circuit board (“PCB”) via solder bumps. The device further comprises a second die enclosed in a wafer scale package and electrically connected to a surface of the first die facing the PCB to form a die stack.

Abstract: A self-leveling heat sink includes a spring-arm device having at least one aperture and at least one spring-arm is coupled to a substrate. The substrate has at least one package mounted thereon, so that when the spring-arm device is mounted to the substrate the at least one package passes through the at least one aperture. A heat sink operable to remove heat from the at least one package has at least one heat sink post operable to receive a heat sink clip located at the distal end of each of the at least one spring-arms. Each of the at least one spring-arms extending from an inside edge of the at least one aperture and operable to couple the heat sink to the at least one package.

Abstract: A custom-molded heat sink corresponds to an individual substrate and includes a heat sink lid having at least one cavity corresponding to at least one die mounted on a substrate. A conductive layer is deposited in the at least one cavity that substantially fills the space between the at least one cavity and the at least one die when the lid is coupled to the substrate.

Abstract: A system for delivering power to a semiconductor device includes a package substrate comprising a substrate top surface and a substrate bottom surface. The system includes a connector formed on the substrate top surface and a cable coupled to the connector. The cable is operable to deliver power and ground to a top of the package substrate.

Abstract: A predictive power regulation apparatus and method that minimizes power and ground bounce in a logic device. The apparatus includes a predictor and a voltage or current smoothing device connected to the predictor. The voltage or current smoothing device outputs adjusted voltage or current to power and ground planes of the logic device. In one embodiment, the predictor includes an instruction scanner device and a look-up table connected to the instruction scanner device. The instruction scanner device determines the next instruction to be executed by the logic device. A voltage/current scheduling buffer connected to the look-up table contains voltage and current compensation and the time at which the voltage or current compensation should be requested from the voltage or current smoothing device. An alternative predictive power regulation apparatus is described that reduces power and ground bounce caused by the I/O buffer circuitry switching in the logic device.

Abstract: A packaged semiconductor device has a semiconductor chip and leads formed over the chip with an electrically insulating film interposed therebetween and a packaging material for sealing the chip and the inner lead portions of the leads. The electrically insulating film has such an area as to provide a peripheral portion not covered by parts of the inner lead portions of the leads for strengthening adherence of the electrically insulating film to the packaging material and to the chip. The electrically insulating film has a thickness substantially in a range from 80 .mu.m to 200 .mu.m for absorbing stress which may be produced in the packaged semiconductor device when subjected to variations of the ambient temperature. A stress absorption film may be formed between the electrically insulating film and the semiconductor chip for absorbing stress which may be produced in the packaged semiconductor device when subjected to variations of the ambient temperature.

Abstract: A packaged semiconductor device has a semiconductor chip and leads formed over the chip with an electrically insulating film interposed therebetween and a packaging material for sealing the chip and the inner lead portions of the leads. The electrically insulating film has such an area as to provide a peripheral portion not covered by parts of the inner lead portions of the leads for strengthening adherence of the electrically insulating film to the packaging material and to the chip. The electrically insulating film has a thickness substantially in a range from 80 .mu.m to 200 .mu.m for absorbing stress which may be produced in the packaged semiconductor device when subjected to variations of the ambient temperature. A stress absorption film may be formed between the electrically insulating film and the semiconductor chip for absorbing stress which may be produced in the packaged semiconductor device when subjected to variations of the ambient temperature.