Patents by Inventor Darwin Rusli

Darwin Rusli has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9011707
    Abstract: An etching method that uses an etch reactant retained within at least a semi-solid media (120, 220, 224, 230). The etch reactant media is applied to selectively etch a surface layer (106, 218, 222). The etch reactant media may be applied to remove metal shorts (222), smearing and eaves resulting from CMP or in failure analysis for uniform removal of a metal layer (218) without damaging the vias, contact, or underlying structures.
    Type: Grant
    Filed: July 16, 2013
    Date of Patent: April 21, 2015
    Assignee: Texas Instruments Incorporated
    Inventor: Darwin Rusli
  • Publication number: 20130302988
    Abstract: An etching method that uses an etch reactant retained within at least a semi-solid media (120, 220, 224, 230). The etch reactant media is applied to selectively etch a surface layer (106, 218, 222). The etch reactant media may be applied to remove metal shorts (222), smearing and eaves resulting from CMP or in failure analysis for uniform removal of a metal layer (218) without damaging the vias, contact, or underlying structures.
    Type: Application
    Filed: July 16, 2013
    Publication date: November 14, 2013
    Inventor: Darwin RUSLI
  • Patent number: 8512584
    Abstract: An etching method that uses an etch reactant retained within at least a semi-solid media (120, 220, 224, 230). The etch reactant media is applied to selectively etch a surface layer (106, 218, 222). The etch reactant media may be applied to remove metal shorts (222), smearing and eaves resulting from CMP or in failure analysis for uniform removal of a metal layer (218) without damaging the vias, contact, or underlying structures.
    Type: Grant
    Filed: July 26, 2011
    Date of Patent: August 20, 2013
    Assignee: Texas Instruments Incorporated
    Inventor: Darwin Rusli
  • Publication number: 20110281433
    Abstract: An etching method that uses an etch reactant retained within at least a semi-solid media (120, 220, 224, 230). The etch reactant media is applied to selectively etch a surface layer (106, 218, 222). The etch reactant media may be applied to remove metal shorts (222), smearing and eaves resulting from CMP or in failure analysis for uniform removal of a metal layer (218) without damaging the vias, contact, or underlying structures.
    Type: Application
    Filed: July 26, 2011
    Publication date: November 17, 2011
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventor: Darwin Rusli
  • Patent number: 8012879
    Abstract: An etching method that uses an etch reactant retained within at least a semi-solid media (120, 220, 224, 230). The etch reactant media is applied to selectively etch a surface layer (106, 218, 222). The etch reactant media may be applied to remove metal shorts (222), smearing and eaves resulting from CMP or in failure analysis for uniform removal of a metal layer (218) without damaging the vias, contact, or underlying structures.
    Type: Grant
    Filed: July 12, 2006
    Date of Patent: September 6, 2011
    Assignee: Texas Instruments Incorporated
    Inventor: Darwin Rusli
  • Publication number: 20060246728
    Abstract: An etching method that uses an etch reactant retained within at least a semi-solid media (120, 220, 224, 230). The etch reactant media is applied to selectively etch a surface layer (106, 218, 222). The etch reactant media may be applied to remove metal shorts (222), smearing and eaves resulting from CMP or in failure analysis for uniform removal of a metal layer (218) without damaging the vias, contact, or underlying structures.
    Type: Application
    Filed: July 12, 2006
    Publication date: November 2, 2006
    Inventor: Darwin Rusli
  • Patent number: 7098143
    Abstract: An etching method that uses an etch reactant retained within at least a semi-solid media (120, 220, 224, 230). The etch reactant media is applied to selectively etch a surface layer (106, 218, 222). The etch reactant media may be applied to remove metal shorts (222), smearing and eaves resulting from CMP or in failure analysis for uniform removal of a metal layer (218) without damaging the vias, contact, or underlying structures.
    Type: Grant
    Filed: April 22, 2004
    Date of Patent: August 29, 2006
    Assignee: Texas Instruments Incorporated
    Inventor: Darwin Rusli
  • Publication number: 20040242018
    Abstract: An etching method that uses an etch reactant retained within at least a semi-solid media (120, 220, 224, 230). The etch reactant media is applied to selectively etch a surface layer (106, 218, 222). The etch reactant media may be applied to remove metal shorts (222), smearing and eaves resulting from CMP or in failure analysis for uniform removal of a metal layer (218) without damaging the vias, contact, or underlying structures.
    Type: Application
    Filed: April 22, 2004
    Publication date: December 2, 2004
    Inventor: Darwin Rusli