Abstract: A semiconductor device that has at least one semiconductor chip attached to a leadframe made of sheet metal of unencumbered full thickness. The leadframe has leads of a first subset that alternate with leads of a second subset. The leads of the first and second subsets have elongated straight lead portions that are parallel to each other in a planar array. A cover layer of insulating material is located over portions of un-encapsulated lead surfaces. The portions of the leads of the first and second subsets that don't have the cover layer have a metallurgical configuration that creates an affinity for solder wetting.

Abstract: A semiconductor device that has at least one semiconductor chip attached to a leadframe made of sheet metal of unencumbered full thickness. The leadframe has leads of a first subset that alternate with leads of a second subset. The leads of the first and second subsets have elongated straight lead portions that are parallel to each other in a planar array. A cover layer of insulating material is located over portions of un-encapsulated lead surfaces. The portions of the leads of the first and second subsets that don't have the cover layer have a metallurgical configuration that creates an affinity for solder wetting.

Abstract: A semiconductor device that has at least one semiconductor chip attached to a leadframe made of sheet metal of unencumbered full thickness. The leadframe has leads of a first subset that alternate with leads of a second subset. The leads of the first and second subsets have elongated straight lead portions that are parallel to each other in a planar array. A cover layer of insulating material is located over portions of un-encapsulated lead surfaces. The portions of the leads of the first and second subsets that don't have the cover layer have a metallurgical configuration that creates an affinity for solder wetting.

Abstract: A semiconductor device that has at least one semiconductor chip attached to a leadframe made of sheet metal of unencumbered full thickness. The leadframe has leads of a first subset that alternate with leads of a second subset. The leads of the first and second subsets have elongated straight lead portions that are parallel to each other in a planar array. A cover layer of insulating material is located over portions of un-encapsulated lead surfaces. The portions of the leads of the first and second subsets that don't have the cover layer have a metallurgical configuration that creates an affinity for solder wetting.

Abstract: In a method and system for testing a presence of a crack (240) in a device under test (DUT) (190), a test system includes a bridge circuit (BC) (120) coupled to an electrical signal source (ESS) (110) capable of generating an electrical signal (102). The BC (120) includes four impedances that are coupled in a bridge structure having two floating nodes (132, 134). The DUT (190) includes a test bond pad (TBP) (192) and an access bond pad (ABP) (194). An impedance measurable across the TBP (192) and the ABP (194) is selectable as one of the four impedances. A stimulus (140) is provided to the DUT (190) to induce stress. A sensor (130) coupled across the two floating nodes (132, 134) detects a change in a value of the electrical signal measured across the two floating nodes (132, 134) in response to the stimulus (140). The change is triggered by the presence of the crack (240) under the TBP (192) caused by the stress, the crack (240) changing the impedance.