Abstract: A balanced sense amplifier circuit. The balanced sense amplifier circuit includes a reading circuit, which includes a first transistor and a second transistor. The first and second transistors include (i) a first transistor body and a second transistor body, respectively and (ii) a first transistor gate electrode and a second transistor gate electrode, respectively. The balanced sense amplifier circuit also includes a control circuit, which is electrically coupled to the first and second transistor bodies. The balanced sense amplifier circuit further includes a testing circuit, which is electrically coupled to the control circuit and the first and second transistors of the reading circuit. The testing circuit is capable of determining whether strengths of the first and second transistors are different. If the strengths of the first and second transistors are different, the control circuit is capable of adjusting the voltage of the first transistor body.

Abstract: Structures and methods are disclosed for operating Balanced Sense Amplifier Circuits. The structure comprises a reading circuit, which includes a first transistor and a second transistor. The first and second transistors comprise (i) a first transistor body and a second transistor body, respectively and (ii) a first transistor gate electrode and a second transistor gate electrode, respectively. The structure also comprises a control circuit, which is electrically coupled to the first and second transistor bodies. The structure further comprises a testing circuit, which is electrically coupled to the control circuit and the first and second transistors of the reading circuit. The testing circuit is capable of determining whether strengths of the first and second transistors are different. In response to the testing circuit determining that the strengths of the first and second transistors are different, the control circuit is capable of adjusting the voltage of the first transistor body.

Abstract: Structures and methods are disclosed for operating Balanced Sense Amplifier Circuits. The structure comprises a reading circuit, which includes a first transistor and a second transistor. The first and second transistors comprise (i) a first transistor body and a second transistor body, respectively and (ii) a first transistor gate electrode and a second transistor gate electrode, respectively. The structure also comprises a control circuit, which is electrically coupled to the first and second transistor bodies. The structure further comprises a testing circuit, which is electrically coupled to the control circuit and the first and second transistors of the reading circuit. The testing circuit is capable of determining whether strengths of the first and second transistors are different. In response to the testing circuit determining that the strengths of the first and second transistors are different, the control circuit is capable of adjusting the voltage of the first transistor body.

Abstract: The present invention provides a method and apparatus for optimizing the burn-in of integrated circuits. One embodiment of the method comprises: performing a first portion of the burn-in process of the integrated circuit; monitoring a power dissipation of the integrated circuit during the first portion of the burn-in process; increasing a burn-in temperature until the power dissipation of the integrated circuit reaches a predetermined maximum power dissipation; and performing a subsequent portion of the burn-in process of the integrated circuit at the increased burn-in temperature.

Abstract: An SOI integrated circuit includes ESD protection on an SOI chip. A first power domain and a second power domain are provided in the SOI chip. In one embodiment, a charge modulation network in the SOI chip between the first power domain and the second power domain mitigates accumulation of electrical charge in an electrically isolated region of the SOI chip. In another embodiment, an ESD protection device in the SOI chip electrically connects the first power domain and the second power domain via a low metal layer to provide a discharge path for accumulated charge.

Abstract: The present invention provides a method and apparatus for optimizing the burn-in of integrated circuits. One embodiment of the method comprises: performing a first portion of the burn-in process of the integrated circuit; monitoring a power dissipation of the integrated circuit during the first portion of the burn-in process; increasing a burn-in temperature until the power dissipation of the integrated circuit reaches a predetermined maximum power dissipation; and performing a subsequent portion of the burn-in process of the integrated circuit at the increased burn-in temperature.

Abstract: An SOI integrated circuit includes ESD protection on an SOI chip. A first power domain and a second power domain are provided in the SOI chip. In one embodiment , a charge modulation network in the SOI chip between the first power domain and the second power domain mitigates accumulation of electrical charge in an electrically isolated region of the SOI chip. In another embodiment, an ESD protection device in the SOI chip electrically connects the first power domain and the second power domain via a low metal layer to provide a discharge path for accumulated charge.

Abstract: A system and method is disclosed for simultaneously searching and refreshing a memory array of a dynamic content addressable memory (DCAM). According to the disclosed invention, the information stored in a row of DCAM cells being refreshed is transferred from the memory array into sense amplifiers, during a read phase of a refresh operation. A search for a matching entry can then be performed, with respect to the information that is transferred to the sense amplifiers. To determine if there is a match, search information is simultaneously compared to the information that has been transferred to the sense amplifiers and to the information that is stored in other rows of DCAM cells of said memory array. Finally, the refresh of that row is completed by restoring the information from the sense amplifiers to that row of DCAM cells.

Abstract: A system and method is disclosed for simultaneously searching and refreshing a memory array of a dynamic content addressable memory (DCAM). According to the disclosed invention, the information stored in a row of DCAM cells being refreshed is transferred from the memory array into sense amplifiers, during a read phase of a refresh operation. A search for a matching entry can then be performed, with respect to the information that is transferred to the sense amplifiers. To determine if there is a match, search information is simultaneously compared to the information that has been transferred to the sense amplifiers and to the information that is stored in other rows of DCAM cells of said memory array. Finally, the refresh of that row is completed by restoring the information from the sense amplifiers to that row of DCAM cells.