Patents by Inventor Daryoush Shiri

Daryoush Shiri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Strain modulated nanostructures for optoelectronic devices and associated systems and methods
    Patent number: 9065253
    Abstract: Strain modulated nanostructures for optoelectronic devices and associated systems and methods are disclosed. A semiconductor laser in accordance with one embodiment of the disclosure, for example, comprises an active region having a nanowire structure formed from a semiconductor material. The nanowire structure of the semiconductor material has a bandgap that is indirect in a first strain state. The laser further includes a straining unit coupled to the active region. The straining unit is configured to modulate the nanowire structure such that the nanowire structure reaches a second strain state in which the bandgap becomes direct or substantially direct and, in operation, emits photons upon electron-hole recombination.
    Type: Grant
    Filed: May 12, 2010
    Date of Patent: June 23, 2015
    Assignee: University of Washington through its Center for Commercialization
    Inventors: Manjeri P. Anantram, Daryoush Shiri
  • STRAIN MODULATED NANOSTRUCTURES FOR OPTOELECTRONIC DEVICES AND ASSOCIATED SYSTEMS AND METHODS
    Publication number: 20100290217
    Abstract: Strain modulated nanostructures for optoelectronic devices and associated systems and methods are disclosed. A semiconductor laser in accordance with one embodiment of the disclosure, for example, comprises an active region having a nanowire structure formed from a semiconductor material. The nanowire structure of the semiconductor material has a bandgap that is indirect in a first strain state. The laser further includes a straining unit coupled to the active region. The straining unit is configured to modulate the nanowire structure such that the nanowire structure reaches a second strain state in which the bandgap becomes direct or substantially direct and, in operation, emits photons upon electron-hole recombination.
    Type: Application
    Filed: May 12, 2010
    Publication date: November 18, 2010
    Inventors: Manjeri P. Anantram, Daryoush Shiri