Patents by Inventor Das Kalyankjumar

Das Kalyankjumar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Diamond field-effect transistor with a particular boron distribution profile
    Patent number: 5254862
    Abstract: An insulated gate field-effect transistor including an active diamond layer having a desired boron doping concentration profile. The boron doping concentration profile generally decreases with increasing depth into the diamond layer so that the active channel has a doping sufficient for field-effect transistor operation. An insulated gate electrode is formed on the highly doped surface and provides a low gate leakage current and passivates the surface of the diamond layer.
    Type: Grant
    Filed: August 14, 1991
    Date of Patent: October 19, 1993
    Assignee: Kobe Steel U.S.A., Inc.
    Inventors: Das Kalyankjumar, David L. Dreifus, Alison J. Tessmer, Vasudev Venkatesan