Patents by Inventor Dasa L. DHEERAJ

Dasa L. DHEERAJ has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11594657
    Abstract: A light emitting diode device comprising: a plurality of nanowires or nanopyramids grown on a graphitic substrate, said nanowires or nanopyramids having a p-n or p-i-n junction, a first electrode in electrical contact with said graphitic substrate; a light reflective layer in contact with the top of at least a portion of said nanowires or nanopyramids, said light reflective layer optionally acting as a second electrode; optionally a second electrode in electrical contact with the top of at least a portion of said nanowires or nanopyramids, said second electrode being essential where said light reflective layer does not act as an electrode; wherein said nanowires or nanopyramids comprise at least one group III-V compound semiconductor; and wherein in use light is emitted from said device in a direction substantially opposite to said light reflective layer.
    Type: Grant
    Filed: July 13, 2016
    Date of Patent: February 28, 2023
    Assignees: CRAYONANO AS, NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)
    Inventors: Dasa L. Dheeraj, Dong Chul Kim, Bjørn Ove M. Fimland, Helge Weman
  • Publication number: 20220262978
    Abstract: A composition of matter comprising: a graphene layer carried directly on a sapphire, Si, SiC, Ga2O3 or group III-V semiconductor substrate; wherein a plurality of holes are present through said graphene layer; and wherein a plurality of nanowires or nanopyramids are grown from said substrate in said holes, said nanowires or nanopyramids comprising at least one semiconducting group III-V compound.
    Type: Application
    Filed: July 16, 2020
    Publication date: August 18, 2022
    Inventors: Mazid MUNSHI, Helge WEMAN, Dasa L. DHEERAJ, Bjorn-Ove M. FIMLAND, Leidulv VIGEN, David BARRIET
  • Publication number: 20180204977
    Abstract: A light emitting diode device comprising: a plurality of nanowires or nanopyramids grown on a graphitic substrate, said nanowires or nanopyramids having a p-n or p-i-n junction, a first electrode in electrical contact with said graphitic substrate; a light reflective layer in contact with the top of at least a portion of said nanowires or nanopyramids, said light reflective layer optionally acting as a second electrode; optionally a second electrode in electrical contact with the top of at least a portion of said nanowires or nanopyramids, said second electrode being essential where said light reflective layer does not act as an electrode; wherein said nanowires or nanopyramids comprise at least one group III-V compound semiconductor; and wherein in use light is emitted from said device in a direction substantially opposite to said light reflective layer.
    Type: Application
    Filed: July 13, 2016
    Publication date: July 19, 2018
    Inventors: Dasa L. DHEERAJ, Dong Chul KIM, Bjørn Ove M. FIMLAND, Helge WEMAN