Abstract: A fractured semiconductor die is disclosed, together with a semiconductor device including the fractured semiconductor die. During fabrication of the semiconductor dies in a wafer, the wafer may be scored in a series of parallel scribe lines through portions of each row of semiconductor dies. The scribe lines then propagate through the full thickness of the wafer to fracture off a portion of each of the semiconductor dies. It may happen that electrical traces such as bit lines in the memory cell arrays short together during the die fracture process. These electrical shorts may be cleared by running a current through each of the electrical traces.

Abstract: A fractured semiconductor die is disclosed, together with a semiconductor device including the fractured semiconductor die. During fabrication of the semiconductor dies in a wafer, the wafer may be scored in a series of parallel scribe lines through portions of each row of semiconductor dies. The scribe lines then propagate through the full thickness of the wafer to fracture off a portion of each of the semiconductor dies. It may happen that electrical traces such as bit lines in the memory cell arrays short together during the die fracture process. These electrical shorts may be cleared by running a current through each of the electrical traces.

Abstract: A fractured semiconductor die is disclosed, together with a semiconductor device including the fractured semiconductor die. During fabrication of the semiconductor dies in a wafer, the wafer may be scored in a series of parallel scribe lines through portions of each row of semiconductor dies. The scribe lines then propagate through the full thickness of the wafer to fracture off a portion of each of the semiconductor dies. It may happen that electrical traces such as bit lines in the memory cell arrays short together during the die fracture process. These electrical shorts may be cleared by running a current through each of the electrical traces.