Patents by Inventor Davd G. Schwarz

Davd G. Schwarz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8088232
    Abstract: Molybdenum, sputtering targets and sintering characterized as having no or minimal texture banding or through thickness gradient. The molybdenum sputtering targets having a fine, uniform grain size as well as uniform texture, are high purity and can be micro-alloyed to improved performance. The sputtering targets can be round discs, square, rectangular or tubular and can be sputtered to form thin films on substrates. By using a segment-forming method, the size of the sputtering target can be up to 6 m×5.5 m. The thin films can be used in electronic components such as Thin Film Transistor-Liquid Crystal Displays, Plasma Display Panels, Organic Light Emitting Diodes, Inorganic Light Emitting Diode Displays, Field Emitting Displays, solar cells, sensors, semiconductor devices, and gate device for CMOS (complementary metal oxide semiconductor) with tunable work functions.
    Type: Grant
    Filed: August 29, 2005
    Date of Patent: January 3, 2012
    Assignee: H.C. Starck Inc.
    Inventors: Brad Lemon, Joseph Hirt, Timothy Welling, James G. Daily, III, David Meendering, Gary Rozak, Jerome O'Grady, Peter R. Jepson, Prabhat Kumar, Steven A. Miller, Richard Wu, Davd G. Schwarz
  • Publication number: 20080193798
    Abstract: Molybdenum sputtering targets and sintering characterized as having no or minimal texture banding or through thickness gradient. The molybdenum sputtering targets having a fine, uniform grain size as well as uniform texture, are high purity and can be micro-alloyed to improved performance. The sputtering targets can be round discs, square, rectangular or tubular and can be sputtered to form thin films on substrates. By using a segment-forming method, the size of the sputtering target can be up to 6 m×5.5 m. The thin films can be used in electronic components such as Thin Film Transistor—Liquid Crystal Displays, Plasma Display Panels, Organic Light Emitting Diodes, Inorganic Light Emitting Diode Displays, Field Emitting Displays, solar cells, sensors, semiconductor devices, and gate device for CMOS (complementary metal oxide semiconductor) with tunable work functions.
    Type: Application
    Filed: August 29, 2005
    Publication date: August 14, 2008
    Applicant: H. C. STARCK INC.
    Inventors: Brad Lemon, Joseph Hirt, Timothy Welling, James G. Daily, David Meendering, Gary Rozak, Jerome O'Grady, Peter R. Jepson, Prabhat Kumar, Steven A. Miller, Richard Wu, Davd G. Schwarz