Abstract: In a described example, a method includes: applying a dicing tape over a metal layer covering a portion of a surface of scribe streets on a device side of a semiconductor wafer that includes semiconductor device dies formed thereon separated from one another by the scribe streets; and placing the semiconductor wafer with the device side facing away from a laser in a stealth dicing machine. A power of a laser beam is adjusted to a first power level. The laser beam is focused through the non-device side of the semiconductor wafer to a first focal depth in the metal layer. The laser beam scans across the scribe streets and ablates the metal layer in the scribe streets. The method continues by singulating the semiconductor device dies using stealth dicing along the scribe streets in the stealth dicing machine.

Abstract: A subring for holding tape connected to semiconductor dies and spanning a passage in a frame having a first diameter includes a base. An opening extends through the base and has a second diameter at least as large as the first diameter. A projection extends from the base to ends positioned on opposite sides of the base. The projection is adapted to clamp the tape to the frame and adapted to prevent relative movement between the tape, the subring, and the frame.

Abstract: In a described example, a method includes: applying a dicing tape over a metal layer covering a portion of a surface of scribe streets on a device side of a semiconductor wafer that includes semiconductor device dies formed thereon separated from one another by the scribe streets; and placing the semiconductor wafer with the device side facing away from a laser in a stealth dicing machine. A power of a laser beam is adjusted to a first power level. The laser beam is focused through the non-device side of the semiconductor wafer to a first focal depth in the metal layer. The laser beam scans across the scribe streets and ablates the metal layer in the scribe streets. The method continues by singulating the semiconductor device dies using stealth dicing along the scribe streets in the stealth dicing machine.

Abstract: A die matrix expander includes a subring including ?3 pieces, and a wafer frame supporting a dicing tape having an indentation for receiving pieces of the subring. The subring prior to expansion sits below a level of the wafer frame and has an outer diameter <an inner diameter of the wafer frame. A translation guide coupled to the subring driven by mechanical force applier moves the subring pieces in an angled path upwards and outwards for stretching the dicing tape including to a top most stretched position above the wafer frame that is over or outside the wafer frame. A cap placed on the pieces of the subring after being fully expanded over the dicing tape locks the dicing tape in the top most stretched position and secures the pieces of the expanded subring in place including when within the indentation during an additional expansion during a subsequent die pick operation.

Abstract: A subring for holding tape connected to semiconductor dies and spanning a passage in a frame having a first diameter includes a base. An opening extends through the base and has a second diameter at least as large as the first diameter. A projection extends from the base to ends positioned on opposite sides of the base. The projection is adapted to clamp the tape to the frame and adapted to prevent relative movement between the tape, the subring, and the frame.

Abstract: A subring for holding tape connected to semiconductor dies and spanning a passage in a frame having a first diameter includes a base. An opening extends through the base and has a second diameter at least as large as the first diameter. A projection extends from the base to ends positioned on opposite sides of the base. The projection is adapted to clamp the tape to the frame and adapted to prevent relative movement between the tape, the subring, and the frame.

Abstract: In a described example, a method includes: applying a dicing tape over a metal layer covering a portion of a surface of scribe streets on a device side of a semiconductor wafer that includes semiconductor device dies formed thereon separated from one another by the scribe streets; and placing the semiconductor wafer with the device side facing away from a laser in a stealth dicing machine. A power of a laser beam is adjusted to a first power level. The laser beam is focused through the non-device side of the semiconductor wafer to a first focal depth in the metal layer. The laser beam scans across the scribe streets and ablates the metal layer in the scribe streets. The method continues by singulating the semiconductor device dies using stealth dicing along the scribe streets in the stealth dicing machine.

Abstract: A die matrix expander includes a subring including ?3 pieces, and a wafer frame supporting a dicing tape having an indentation for receiving pieces of the subring. The subring prior to expansion sits below a level of the wafer frame and has an outer diameter <an inner diameter of the wafer frame. A translation guide coupled to the subring driven by mechanical force applier moves the subring pieces in an angled path upwards and outwards for stretching the dicing tape including to a top most stretched position above the wafer frame that is over or outside the wafer frame. A cap placed on the pieces of the subring after being fully expanded over the dicing tape locks the dicing tape in the top most stretched position and secures the pieces of the expanded subring in place including when within the indentation during an additional expansion during a subsequent die pick operation.

Abstract: A nickel/palladium/gold metallization stack is formed upon connection pads of integrated circuits at the wafer level through an electroless plating method. The metallization stack can be formed over copper or aluminum interconnect pads; the lower nickel layer bonds securely to the copper or aluminum interconnect pads, while the intermediate palladium layer serves as a diffusion barrier for preventing the nickel from out-diffusing during subsequent thermal cycles. The upper gold layer adheres to the palladium and readily receives a variety of interconnect elements, including gold bumps, gold wire bonds, solder bumps, and nickel bumps. The electroless plating process permits connection pads to be formed using fine geometries, and allows adjacent connection pads to be formed within 5 micrometers of each other.

Abstract: A nickel/palladium/gold metallization stack is formed upon connection pads of integrated circuits at the wafer level through an electroless plating method. The metallization stack can be formed over copper or aluminum interconnect pads; the lower nickel layer bonds securely to the copper or aluminum interconnect pads, while the intermediate palladium layer serves as a diffusion barrier for preventing the nickel from out-diffusing during subsequent thermal cycles. The upper gold layer adheres to the palladium and readily receives a variety of interconnect elements, including gold bumps, gold wire bonds, solder bumps, and nickel bumps. The electroless plating process permits connection pads to be formed using fine geometries, and allows adjacent connection pads to be formed within 5 micrometers of each other.