Abstract: Methods, non-transitory machine readable media, and computing devices that ensure correctness of file system analytics are disclosed. With this technology, a first generation number for a volume is incremented in response to a modification of a rule set that defines properties of objects of a file system associated with the volume. A determination is made when a second generation number in a first inode for a first one of the objects matches the first generation number. The first inode is identified based on a traversal of a directory tree associated with the file system. The modified rule set is applied to the properties for the first one of the objects to obtain values, when the second generation number fails to match the first generation number. Analytics data is output after the traversal has completed. The analytics data is generated in response to a query and is based on the values.

Abstract: A sub-micron, on the order of 80-nanometer diameter, resonant tunneling diode having a peak-to-valley ratio of approximately 5.1 to 1, and a method for its manufacture. The invention is unique in that its performance characteristics are unmatched in comparably sized resonant tunneling diodes. Further, the polyimide passivation and planerization methodology provides unexpected processing advantages with respect to application in the fabrication of resonant tunneling diodes. The invention includes a substrate 706 that serves as a foundation for bottom contact layers 708 and a polyimide 700 coating. An ohmic metal contact 702 and emitter metal contact 704 protrude above the polyimide 700 coating exposing the ohmic metal contact 702 and emitter metal contact 704. The contacts are capped with an etch resistant coating 710 thus allowing for the polyimide etch, and other etching processes without adversely affecting the contacts.

Abstract: A sub-micron, on the order of 80-nanometer diameter, resonant tunneling diode having a peak-to-valley ratio of approximately 5.1 to 1, and a method for its manufacture. The invention is unique in that its performance characteristics are unmatched in comparably sized resonant tunneling diodes. Further, the polyamide passivation and planerization methodology provides unexpected processing advantages with respect to application in the fabrication of resonant tunneling diodes. The invention includes a substrate 706 that serves as a foundation for bottom contact layers 708 and a polyamide 700 coating. An ohmic metal contact 702 and emitter metal contact 704 protrude above the polyamide 700 coating exposing the ohmic metal contact 702 and emitter metal contact 704. The contacts are capped with an etch resistant coating 710 thus allowing for the polyamide etch, and other etching processes without adversely affecting the contacts.