Abstract: A submersible buoy adapted to be attached to a submersible object via a line is disclosed with a central body having a first end and a second end axially spaced apart, the central body adapted to have the line wound therearound. A first and a second floater units are connected to the ends of the central body and have a first buoyancy and a second buoyancy being of a value relative to the first buoyancy such that a total buoyancy force exerted on the submersible buoy, at equilibrium when submerged, is substantially perpendicular to a central axis of the buoy. A line release mechanism includes a line retention device operable between a closed position and a released position, retaining the line to prevent unwinding of the line, and releasing the line to allow the line to unwind, the line release mechanism being operatively linked to a controller unit controllable remotely for remote actuation of the line release mechanism.

Abstract: The present invention provides a vehicle for inspecting electrically controllable by a human operator using electrical control means. The vehicle is propelled by at least one pair of electric motors of differing operating speed output ranges connectable by a clutch, with the pair of electric motors being individually controllable and the clutch operable to engage and disengage the electric motors.

Abstract: The present invention provides a vehicle for inspecting a pipe including a chassis; propulsion means for driving the chassis along the pipe; and sensor means which when located adjacent an interior surface of the pipe provide a signal indicative of the presence of lateral openings in the pipe; the sensor means comprising a capacitive sensor.

Abstract: A thick copper interconnection structure and method for an LDMOS transistor for power semiconductor devices. A large LDMOS transistor is formed of a plurality of source and drain diffusion regions to be coupled together to form the source and drain. Gate regions are formed between the alternating source and drain diffusions. Each diffusion region has a first metal layer stripe formed over it and in electrical contact with it. A second metal layer conductor is formed over a plurality of the first metal layer stripes, and selectively contacts the first metal layer stripes to form a source and a drain bus. A thick third metal layer is then formed over each second metal layer bus, either physically contacting it or selectively electrically contacting it. The thick third level metal is fabricated of a highly conductive copper layer.

Abstract: An improved waveform generator (10) permits digital spectrum spreading by employing circuitry for controlling the charging and discharging of a load capacitor (24) to alter the generator's base frequency. A charge/discharge circuit (22) modulates the currents into the capacitor (24) to effect the slope of the triangle signal waveform (202). A threshold detector (26) determines the amplitude of the base frequency. Switch logic (28) controls an array of 1/N current switches (18) that provide incremental values of a reference source (12) to a summing function (16) which, in turn, feeds a charge/discharge circuit (22). The energy of the triangle waveform (202) remains approximately the same only it is now spread over a range of frequencies with the amplitude of the signal at a given point less than the amplitude of the base.

Abstract: A thick copper interconnection structure and method for an LDMOS transistor for power semiconductor devices. A large LDMOS transistor is formed of a plurality of source and drain diffusion regions to be coupled together to form the source and drain. Gate regions are formed between the alternating source and drain diffusions. Each diffusion region has a first metal layer stripe formed over it and in electrical contact with it. A second metal layer conductor is formed over a plurality of the first metal layer stripes, and selectively contacts the first metal layer stripes to form a source and a drain bus. A thick third metal layer is then formed over each second metal layer bus, either physically contacting it or selectively electrically contacting it. The thick third level metal is fabricated of a highly conductive copper layer.

Abstract: An interconnection structure and method for a multiple zener diode ESD protectoin circuit for power semiconductor devices. A plurality of lateral Zener diodes is formed. Each device is formed of a plurality of cathode and anode diffusion regions to be coupled together to form the cathode and anode of one or more Zener diodes. Each diffusion region has a first metal layer stripe formed over it and in electrical contact with it. A second metal layer conductor is formed over a plurality of the first metal layer stripes, and selectively contacts the first metal layer stripes to form a bus. A thick third metal layer is then formed over each second metal layer bus, either physically contacting it or selectively electrically contacting it. The thick third level metal is fabricated of a highly conductive material, such as copper. The resulting Zener diodes are coupled together in an ESD structure using the second level busses and the thick copper third level busses.

Abstract: A method of efficiently turning off inductive loads includes turning off a driving switch, monitoring a circuit output during turn-off, and activating a control circuit in response to an inductive flyback voltage at the output which turns on a recirculation switch and recirculates residual load current and clamps the output thereby substantially decreasing power dissipation during inductive load turn-off.