Patents by Inventor Dave Grider

Dave Grider has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen
    Patent number: 8119539
    Abstract: Methods of forming oxide layers on silicon carbide layers are disclosed, including placing a silicon carbide layer in a chamber such as an oxidation furnace tube that is substantially free of metallic impurities, heating an atmosphere of the chamber to a temperature of about 500° C. to about 1300° C., introducing atomic oxygen in the chamber, and flowing the atomic oxygen over a surface of the silicon carbide layer to thereby form an oxide layer on the silicon carbide layer. In some embodiments, introducing atomic includes oxygen providing a source oxide in the chamber and flowing a mixture of nitrogen and oxygen gas over the source oxide. The source oxide may comprise aluminum oxide or another oxide such as manganese oxide. Some methods include forming an oxide layer on a silicon carbide layer and annealing the oxide layer in an atmosphere including atomic oxygen.
    Type: Grant
    Filed: July 14, 2009
    Date of Patent: February 21, 2012
    Assignee: Cree, Inc.
    Inventors: Mrinal K. Das, Anant K. Agarwal, John W. Palmour, Dave Grider
  • Methods of Fabricating Oxide Layers on Silicon Carbide Layers Utilizing Atomic Oxygen
    Publication number: 20100009545
    Abstract: Methods of forming oxide layers on silicon carbide layers are disclosed, including placing a silicon carbide layer in a chamber such as an oxidation furnace tube that is substantially free of metallic impurities, heating an atmosphere of the chamber to a temperature of about 500° C. to about 1300° C., introducing atomic oxygen in the chamber, and flowing the atomic oxygen over a surface of the silicon carbide layer to thereby form an oxide layer on the silicon carbide layer. In some embodiments, introducing atomic includes oxygen providing a source oxide in the chamber and flowing a mixture of nitrogen and oxygen gas over the source oxide. The source oxide may comprise aluminum oxide or another oxide such as manganese oxide. Some methods include forming an oxide layer on a silicon carbide layer and annealing the oxide layer in an atmosphere including atomic oxygen.
    Type: Application
    Filed: July 14, 2009
    Publication date: January 14, 2010
    Inventors: Mrinal K. Das, Anant K. Agarwal, John W. Palmour, Dave Grider
  • Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen
    Patent number: 7572741
    Abstract: Methods of forming oxide layers on silicon carbide layers are disclosed, including placing a silicon carbide layer in a chamber such as an oxidation furnace tube that is substantially free of metallic impurities, heating an atmosphere of the chamber to a temperature of about 500 ° C. to about 1300 ° C., introducing atomic oxygen in the chamber, and flowing the atomic oxygen over a surface of the silicon carbide layer to thereby form an oxide layer on the silicon carbide layer. In some embodiments, introducing atomic includes oxygen providing a source oxide in the chamber and flowing a mixture of nitrogen and oxygen gas over the source oxide. The source oxide may comprise aluminum oxide or another oxide such as manganese oxide. Some methods include forming an oxide layer on a silicon carbide layer and annealing the oxide layer in an atmosphere including atomic oxygen.
    Type: Grant
    Filed: September 16, 2005
    Date of Patent: August 11, 2009
    Assignee: Cree, Inc.
    Inventors: Mrinal K. Das, Anant K. Agarwal, John W. Palmour, Dave Grider
  • Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen
    Publication number: 20090004883
    Abstract: Methods of forming oxide layers on silicon carbide layers are disclosed, including placing a silicon carbide layer in a chamber such as an oxidation furnace tube that is substantially free of metallic impurities, heating an atmosphere of the chamber to a temperature of about 500° C. to about 1300° C., introducing atomic oxygen in the chamber, and flowing the atomic oxygen over a surface of the silicon carbide layer to thereby form an oxide layer on the silicon carbide layer. In some embodiments, introducing atomic includes oxygen providing a source oxide in the chamber and flowing a mixture of nitrogen and oxygen gas over the source oxide. The source oxide may comprise aluminum oxide or another oxide such as manganese oxide. Some methods include forming an oxide layer on a silicon carbide layer and annealing the oxide layer in an atmosphere including atomic oxygen.
    Type: Application
    Filed: September 16, 2005
    Publication date: January 1, 2009
    Inventors: Mrinal K. Das, Anant K. Agarwal, John W. Palmour, Dave Grider