Patents by Inventor Dave J. Hemker

Dave J. Hemker has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for making dual-damascene dielectric structures
    Patent number: 7501339
    Abstract: A dielectric structure and method for making a dielectric structure for dual-damascene applications over a substrate are provided. The method includes forming a barrier layer over the substrate, forming an inorganic dielectric layer over the barrier layer, and forming a low dielectric constant layer over the inorganic dielectric layer. In this preferred example, the method also includes forming a trench in the low dielectric constant layer using a first etch chemistry. The etching is timed to etch through a partial thickness of the low dielectric constant layer and the first etch chemistry is optimized to a selected low dielectric constant material. The method further includes forming a via hole in the inorganic dielectric layer using a second etch chemistry, such that the via is within the trench. In a specific example, the inorganic dielectric layer can be an un-doped TEOS oxide or a fluorine doped oxide, and the low dielectric constant layer can be a carbon doped oxide (C-oxide) or other low K dielectrics.
    Type: Grant
    Filed: March 23, 2006
    Date of Patent: March 10, 2009
    Assignee: Lam Research Corporation
    Inventors: Jay E. Uglow, Nicolas J. Bright, Dave J. Hemker, Kenneth P. MacWilliams, Jeffrey C. Benzing, Timothy M. Archer
  • Methods for making dual-damascene dielectric structures
    Patent number: 7060605
    Abstract: A dielectric structure and method for making a dielectric structure for dual-damascene applications over a substrate are provided. The method includes forming a barrier layer over the substrate, forming an inorganic dielectric layer over the barrier layer, and forming a low dielectric constant layer over the inorganic dielectric layer. In this preferred example, the method also includes forming a trench in the low dielectric constant layer using a first etch chemistry, and forming a via in the inorganic dielectric layer using a second etch chemistry, such that the via is within the trench. In another specific example, the inorganic dielectric layer can be an un-doped TEOS oxide or a fluorine doped oxide, and the low dielectric constant layer can be a carbon doped oxide (C-oxide) or other low K dielectrics.
    Type: Grant
    Filed: February 16, 2001
    Date of Patent: June 13, 2006
    Assignee: Lam Research Corporation
    Inventors: Jay E. Uglow, Nicolas J. Bright, Dave J. Hemker, Kenneth P. MacWilliams, Jeffrey C. Benzing, Timothy M. Archer
  • Dual-damascene dielectric structures
    Patent number: 6909190
    Abstract: A dielectric structure and method for making a dielectric structure for dual-damascene applications over a substrate are provided. The method includes forming a barrier layer over the substrate, forming an inorganic dielectric layer over the barrier layer, and forming a low dielectric constant layer over the inorganic dielectric layer. In this preferred example, the method also includes forming a trench in the low dielectric constant layer using a first etch chemistry, and forming a via in the inorganic dielectric layer using a second etch chemistry, such that the via is within the trench. In another specific example, the inorganic dielectric layer can be an un-doped TEOS oxide or a fluorine doped oxide, and the low dielectric constant layer can be a carbon doped oxide (C-oxide) or other low K dielectrics.
    Type: Grant
    Filed: February 16, 2001
    Date of Patent: June 21, 2005
    Assignee: Lam Research Corporation
    Inventors: Jay E. Uglow, Nicolas J. Bright, Dave J. Hemker, Kenneth P. MacWilliams, Jeffrey C. Benzing, Timothy M. Archer
  • DUAL - DAMASCENE DIELECTRIC STRUCTURES
    Publication number: 20010010970
    Abstract: A dielectric structure and method for making a dielectric structure for dual-damascene applications over a substrate are provided. The method includes forming a barrier layer over the substrate, forming an inorganic dielectric layer over the barrier layer, and forming a low dielectric constant layer over the inorganic dielectric layer. In this preferred example, the method also includes forming a trench in the low dielectric constant layer using a first etch chemistry, and forming a via in the inorganic dielectric layer using a second etch chemistry, such that the via is within the trench. In another specific example, the inorganic dielectric layer can be an un-doped TEOS oxide or a fluorine doped oxide, and the low dielectric constant layer can be a carbon doped oxide (C-oxide) or other low K dielectrics.
    Type: Application
    Filed: February 16, 2001
    Publication date: August 2, 2001
    Inventors: Jay E. Uglow, Nicolas J. Bright, Dave J. Hemker, Kenneth P. MacWilliams, Jeffrey C. Benzing, Timothy M. Archer
  • Methods for making dual-damascene dielectric structures
    Publication number: 20010009803
    Abstract: A dielectric structure and method for making a dielectric structure for dual-damascene applications over a substrate are provided. The method includes forming a barrier layer over the substrate, forming an inorganic dielectric layer over the barrier layer, and forming a low dielectric constant layer over the inorganic dielectric layer. In this preferred example, the method also includes forming a trench in the low dielectric constant layer using a first etch chemistry, and forming a via in the inorganic dielectric layer using a second etch chemistry, such that the via is within the trench. In another specific example, the inorganic dielectric layer can be an un-doped TEOS oxide or a fluorine doped oxide, and the low dielectric constant layer can be a carbon doped oxide (C-oxide) or other low K dielectrics.
    Type: Application
    Filed: February 16, 2001
    Publication date: July 26, 2001
    Inventors: Jay E. Uglow, Nicolas J. Bright, Dave J. Hemker, Kenneth P. MacWilliams, Jeffrey C. Benzing, Timothy M. Archer
  • Dual-damascene dielectric structures and methods for making the same
    Patent number: 6251770
    Abstract: A dielectric structure and method for making a dielectric structure for dual-damascene applications over a substrate are provided. The method includes forming a barrier layer over the substrate, forming an inorganic dielectric layer over the barrier layer, and forming a low dielectric constant layer over the inorganic dielectric layer. In this preferred example, the method also includes forming a trench in the low dielectric constant layer using a first etch chemistry, and forming a via in the inorganic dielectric layer using a second etch chemistry, such that the via is within the trench. In another specific example, the inorganic dielectric layer can be an un-doped TEOS oxide or a fluorine doped oxide, and the low dielectric constant layer can be a carbon doped oxide (C-oxide) or other low K dielectrics.
    Type: Grant
    Filed: June 30, 1999
    Date of Patent: June 26, 2001
    Assignees: Lam Research Corp., Novellus Systems, Inc.
    Inventors: Jay E. Uglow, Nicolas J. Bright, Dave J. Hemker, Kenneth P. MacWilliams, Jeffrey C. Benzing, Timothy M. Archer