Patents by Inventor Dave Oehler

Dave Oehler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7940102
    Abstract: Consistent with an example embodiment, an edge-rate control circuit arrangement (300) for an I2C bus application comprises a first circuit stage (10, M1, M3), responsive to a state transition of a received signal. A second circuit stage (310, 25, 20, 35, 45, M4, ESD) is responsive to the state transition of the received signal and includes drive circuitry (M4) that is activated in response to the state transition of the received signal in order to provide an edge-transition signal for an I2C bus, and regulation circuitry (310, R1, R2, M0, M2) adapted to control the drive circuit and regulate a transition rate for the edge-transition signal, the transition rate being greater than a transition rate of the received signal at the first circuit stage and greater than a minimum and less than a maximum transition rate designated for communication on the I2C bus.
    Type: Grant
    Filed: April 30, 2010
    Date of Patent: May 10, 2011
    Assignee: NXP B.V.
    Inventors: Alma Anderson, Joseph Rutkowski, Dave Oehler
  • Publication number: 20100264970
    Abstract: Consistent with an example embodiment, an edge-rate control circuit arrangement (300) for an I2C bus application comprises a first circuit stage (10, M1, M3), responsive to a state transition of a received signal. A second circuit stage (310, 25, 20, 35, 45, M4, ESD) is responsive to the state transition of the received signal and includes drive circuitry (M4) that is activated in response to the state transition of the received signal in order to provide an edge-transition signal for an I2C bus, and regulation circuitry (310, R1, R2, M0, M2) adapted to control the drive circuit and regulate a transition rate for the edge-transition signal, the transition rate being greater than a transition rate of the received signal at the first circuit stage and greater than a minimum and less than a maximum transition rate designated for communication on the I2C bus.
    Type: Application
    Filed: April 30, 2010
    Publication date: October 21, 2010
    Applicant: NXP B.V.
    Inventors: Alma ANDERSON, Joseph RUTKOWSKI, Dave OEHLER
  • Patent number: 7733142
    Abstract: Consistent with an example embodiment, an edge-rate control circuit arrangement (300) for an I2C bus application comprises a first circuit stage (10, M1, M3), responsive to a state transition of a received signal. A second circuit stage (310, 25, 20, 35, 45, M4, ESD) is responsive to the state transition of the received signal and includes drive circuitry (M4) that is activated in response to the state transition of the received signal in order to provide an edge-transition signal for an I2C bus, and regulation circuitry (310, R1, R2, M0, M2) adapted to control the drive circuit and regulate a transition rate for the edge-transition signal, the transition rate being greater than a transition rate of the received signal at the first circuit stage and greater than a minimum and less than a maximum transition rate designated for communication on the I2C bus.
    Type: Grant
    Filed: February 24, 2006
    Date of Patent: June 8, 2010
    Assignee: NXP B.V.
    Inventors: Alma Anderson, Joseph Rutkowski, Dave Oehler
  • Publication number: 20090066381
    Abstract: In an I2C bus, an edge rate control for an output slows the falling edge of a signal. In an example embodiment, there is an edge rate control circuit for use in an I2C bus. The circuit comprises a resistor divider having a first terminal, a divider terminal, and a second terminal. There is a first NMOS transistor having a source, drain, and gate terminal and a first PMOS transistor having a source, drain, and gate terminal; the source terminals of the first NMOS and first PMOS transistors are coupled to one another; the drain terminal of the first PMOS transistor is coupled to the divider terminal of the resistor divider; the gate of the first PMOS transistor is coupled to the second terminal of the resistor divider; and the drain of the first NMOS transistor is coupled to ground.
    Type: Application
    Filed: February 24, 2006
    Publication date: March 12, 2009
    Applicant: NXP B.V.
    Inventors: Alma Anderson, Joseph Rutkowski, Dave Oehler