Patents by Inventor Dave Stumbo
Dave Stumbo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20100285972Abstract: This invention provides novel nanofiber enhanced surface area substrates and structures comprising such substrates, as well as methods and uses for such substrates.Type: ApplicationFiled: October 17, 2007Publication date: November 11, 2010Applicant: Nanosys, Inc.Inventors: Roberto Dubrow, Robert Hugh Daniels, J. Wallace Parce, Matthew Murphy, Jim Hamilton, Erik Scher, Dave Stumbo, Chunming Niu, Linda T. Romano, Jay Goldman, Vijendra Sahi, Jeffery A. Whiteford
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Patent number: 7701428Abstract: The present invention is directed to a display using nanowire transistors. In particular, a liquid crystal display using nanowire pixel transistors, nanowire row transistors, nanowire column transistors and nanowire edge electronics is described. A nanowire pixel transistor is used to control the voltage applied across a pixel containing liquid crystals. A pair of nanowire row transistors is used to turn nanowire pixel transistors that are located along a row trace connected to the pair of nanowire row transistors on and off. Nanowire column transistors are used to apply a voltage across nanowire pixel transistors that are located along a column trace connected to a nanowire column transistor. Displays including organic light emitting diodes (OLED) displays, nanotube field effect displays, plasma displays, micromirror displays, micoelectromechanical (MEMs) displays, electrochromic displays and electrophoretic displays using nanowire transistors are also provided.Type: GrantFiled: July 21, 2006Date of Patent: April 20, 2010Assignee: Nanosys, Inc.Inventors: Dave Stumbo, Stephen Empedocles
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Patent number: 7273732Abstract: The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.Type: GrantFiled: July 21, 2006Date of Patent: September 25, 2007Assignee: Nanosys, Inc.Inventors: Yaoling Pan, Xiangfeng Duan, Robert S. Dubrow, Jay L. Goldman, Shahriar Mostarshed, Chunming Niu, Linda T. Romano, Dave Stumbo
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Publication number: 20060256059Abstract: The present invention is directed to a display using nanowire transistors. In particular, a liquid crystal display using nanowire pixel transistors, nanowire row transistors, nanowire column transistors and nanowire edge electronics is described. A nanowire pixel transistor is used to control the voltage applied across a pixel containing liquid crystals. A pair of nanowire row transistors is used to turn nanowire pixel transistors that are located along a row trace connected to the pair of nanowire row transistors on and off. Nanowire column transistors are used to apply a voltage across nanowire pixel transistors that are located along a column trace connected to a nanowire column transistor. Displays including organic light emitting diodes (OLED) displays, nanotube field effect displays, plasma displays, micromirror displays, micoelectromechanical (MEMs) displays, electrochromic displays and electrophoretic displays using nanowire transistors are also provided.Type: ApplicationFiled: July 21, 2006Publication date: November 16, 2006Applicant: Nanosys, Inc.Inventors: Dave Stumbo, Stephen Empedocles
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Publication number: 20060255481Abstract: The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.Type: ApplicationFiled: July 21, 2006Publication date: November 16, 2006Applicant: Nanosys, Inc.Inventors: Yaoling Pan, Xiangfeng Duan, Robert Dubrow, Jay Goldman, Shahriar Mostarshed, Chunming Niu, Linda Romano, Dave Stumbo
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Patent number: 7105428Abstract: The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.Type: GrantFiled: April 29, 2005Date of Patent: September 12, 2006Assignee: Nanosys, Inc.Inventors: Yaoling Pan, Xiangfeng Duan, Robert S. Dubrow, Jay L. Goldman, Shahriar Mostarshed, Chunming Niu, Linda T. Romano, Dave Stumbo
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Patent number: 7102605Abstract: The present invention is directed to a display using nanowire transistors. In particular, a liquid crystal display using nanowire pixel transistors, nanowire row transistors, nanowire column transistors and nanowire edge electronics is described. A nanowire pixel transistor is used to control the voltage applied across a pixel containing liquid crystals. A pair of nanowire row transistors is used to turn nanowire pixel transistors that are located along a row trace connected to the pair of nanowire row transistors on and off. Nanowire column transistors are used to apply a voltage across nanowire pixel transistors that are located along a column trace connected to a nanowire column transistor. Displays including organic light emitting diodes (OLED) displays, nanotube field effect displays, plasma displays, micromirror displays, micoelectromechanical (MEMs) displays, electrochromic displays and electrophoretic displays using nanowire transistors are also provided.Type: GrantFiled: September 30, 2003Date of Patent: September 5, 2006Assignee: Nanosys, Inc.Inventors: Dave Stumbo, Stephen Empedocles
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Publication number: 20060159916Abstract: This invention provides novel nanofiber enhanced surface area substrates and structures comprising such substrates, as well as methods and uses for such substrates.Type: ApplicationFiled: May 5, 2004Publication date: July 20, 2006Applicant: NANOSYS, Inc.Inventors: Robert Dubrow, Robert Daniels, J. Parce, Matthew Murphy, Jim Hamilton, Erik Scher, Dave Stumbo, Chunming Niu, Linda Romano, Jay Goldman, Vijendra Sahi, Jeffery Whiteford
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Publication number: 20060019472Abstract: The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.Type: ApplicationFiled: April 29, 2005Publication date: January 26, 2006Applicant: Nanosys, Inc.Inventors: Yaoling Pan, Xiangfeng Duan, Robert Dubrow, Jay Goldman, Shahriar Mostarshed, Chunming Niu, Linda Romano, Dave Stumbo
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Publication number: 20040135951Abstract: The present invention is directed to a display using nanowire transistors. In particular, a liquid crystal display using nanowire pixel transistors, nanowire row transistors, nanowire column transistors and nanowire edge electronics is described. A nanowire pixel transistor is used to control the voltage applied across a pixel containing liquid crystals. A pair of nanowire row transistors is used to turn nanowire pixel transistors that are located along a row trace connected to the pair of nanowire row transistors on and off. Nanowire column transistors are used to apply a voltage across nanowire pixel transistors that are located along a column trace connected to a nanowire column transistor. Displays including organic light emitting diodes (OLED) displays, nanotube field effect displays, plasma displays, micromirror displays, micoelectromechanical (MEMs) displays, electrochromic displays and electrophoretic displays using nanowire transistors are also provided.Type: ApplicationFiled: September 30, 2003Publication date: July 15, 2004Inventors: Dave Stumbo, Stephen Empedocles