Patents by Inventor Dave Trussell
Dave Trussell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8674255Abstract: A plasma processing system is provided. The plasma processing system includes a radio frequency (RF) power generator configured to have a tunable frequency power output, the frequency output being adjustable within a range. A processing chamber having a bottom electrode and a top electrode is included. A plasma region being defined between the bottom and top electrodes and the processing chamber receives RF power from the RF power generator. A match network is coupled between the RF power generator and the processing chamber. The match network has a first tunable element and a second tunable element. The first tunable element adjusts a split between a first grounding pathway defined within an inner region of the plasma region and a second grounding pathway defined within an outer region of the plasma region. The second tunable element adjusts a load delivered to the processing chamber from the power generator.Type: GrantFiled: December 8, 2005Date of Patent: March 18, 2014Assignee: Lam Research CorporationInventors: Eric Lenz, Raj Dhindsa, Dave Trussell, Lumin Li
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Patent number: 8299390Abstract: A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.Type: GrantFiled: January 29, 2010Date of Patent: October 30, 2012Assignee: Lam Research CorporationInventors: Rajinder Dhindsa, Felix Kozakevich, Lumin Li, Dave Trussell
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Publication number: 20100126847Abstract: A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.Type: ApplicationFiled: January 29, 2010Publication date: May 27, 2010Applicant: Lam Research CorporationInventors: Rajinder Dhindsa, Felix Kozakevich, Lumin Li, Dave Trussell
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Patent number: 7683289Abstract: A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.Type: GrantFiled: December 16, 2005Date of Patent: March 23, 2010Assignee: Lam Research CorporationInventors: Rajinder Dhindsa, Felix Kozakevich, Lumin Li, Dave Trussell
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Patent number: 7405521Abstract: A workpiece is processed with a plasma in a vacuum plasma processing chamber by exciting the plasma at several frequencies such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The chamber includes central top and bottom electrodes and a peripheral top and/or bottom electrode arrangement that is either powered by RF or is connected to a reference potential by a filter arrangement that passes at least one of the plasma excitation frequencies to the exclusion of other frequencies.Type: GrantFiled: August 22, 2003Date of Patent: July 29, 2008Assignee: Lam Research CorporationInventors: Raj Dhindsa, S. M. Reza Sadjadi, Felix Kozakevich, Dave Trussell, Lumin Li, Eric Lenz, Camelia Rusu, Mukund Srinivasan, Aaron Eppler, Jim Tietz, Jeffrey Marks
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Patent number: 7276135Abstract: A plasma processor chamber includes a bottom electrode and a top electrode assembly having a center electrode surrounded by a grounded electrode. RF excited plasma between the electrodes induces a DC bias on them. A measure of the bottom electrode DC bias controls the capacitance of a first series resonant circuit connected between the center electrode and ground. A measure of the center electrode DC bias controls the capacitance of a second series resonant circuit connected between the bottom electrode and ground.Type: GrantFiled: May 28, 2004Date of Patent: October 2, 2007Assignee: Lam Research CorporationInventors: Rajinder Dhindsa, Felix Kozakevich, Dave Trussell
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Publication number: 20070141729Abstract: A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.Type: ApplicationFiled: December 16, 2005Publication date: June 21, 2007Applicant: Lam Research CorporationInventors: Rajinder Dhindsa, Felix Kozakevich, Lumin Li, Dave Trussell
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Publication number: 20050264219Abstract: A plasma processor chamber includes a bottom electrode and a top electrode assembly having a center electrode surrounded by a grounded electrode. RF excited plasma between the electrodes induces a DC bias on them. A measure of the bottom electrode DC bias controls the capacitance of a first series resonant circuit connected between the center electrode and ground. A measure of the center electrode DC bias controls the capacitance of a second series resonant circuit connected between the bottom electrode and ground.Type: ApplicationFiled: May 28, 2004Publication date: December 1, 2005Applicant: Lam Research CorporationInventors: Rajinder Dhindsa, Felix Kozakevich, Dave Trussell
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Publication number: 20050264218Abstract: A plasma processor processing a workpiece includes sources having frequencies 2 MHz, 27 MHz, and 60 MHz, applied by three matching networks to an electrode in a vacuum chamber including the workpiece. Alternatively 60 MHz is applied to a second electrode by a fourth matching network. The matching networks, substantially tuned to the frequencies of the sources driving them, include series inductances so the 2 MHz inductance exceeds the 27 MHz network inductance, and the 27 MHz network inductance exceeds the inductances of the 60 MHz networks. The matching networks attenuate by at least 26 DB the frequencies of the sources that do not drive them. Shunt inductors between the 27 and 60 MHz sources decouple 2 MHz from the 27 and 60 MHz sources. A series resonant circuit (resonant to about 5 MHz) shunts the 2 MHz network and the electrode to help match the 2 MHz source to the electrode.Type: ApplicationFiled: May 28, 2004Publication date: December 1, 2005Applicant: Lam Research CorporationInventors: Rajinder Dhindsa, Felix Kozakevich, Dave Trussell
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Publication number: 20050039682Abstract: A workpiece is processed with a plasma in a vacuum plasma processing chamber by exciting the plasma at several frequencies such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The chamber includes central top and bottom electrodes and a peripheral top and/or bottom electrode arrangement that is either powered by RF or is connected to a reference potential by a filter arrangement that passes at least one of the plasma excitation frequencies to the exclusion of other frequencies.Type: ApplicationFiled: August 22, 2003Publication date: February 24, 2005Inventors: Raj Dhindsa, S.M. Sadjadi, Felix Kozakevich, Dave Trussell, Lumin Li, Eric Lenz, Camelia Rusu, Mukund Srinivasan, Aaron Eppler, Jim Tietz, Jeffrey Marks
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Patent number: 6744212Abstract: The present invention includes a system and method for confining plasma within a plasma processing chamber. The plasma processing apparatus comprises a first electrode, a power generator, a second electrode, at least one confinement ring, and a ground extension surrounding the first electrode. The first electrode is configured to receive a workpiece and has an associated first electrode area. The power generator is operatively coupled to the first electrode, and the power generator is configured to generate RF power that is communicated to the first electrode. The second electrode is disposed at a distance from the first electrode. The second electrode is configured to provide a complete electrical circuit for RF power communicated from the first electrode. Additionally, the second electrode has a second electrode area that is greater than the first electrode area. At least one confinement ring is configured to assist confine the plasma.Type: GrantFiled: February 14, 2002Date of Patent: June 1, 2004Assignee: Lam Research CorporationInventors: Andreas Fischer, Dave Trussell, Bill Kennedy, Peter Loewenhardt
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Publication number: 20030151371Abstract: The present invention includes a system and method for confining plasma within a plasma processing chamber. The plasma processing apparatus comprises a first electrode, a power generator, a second electrode, at least one confinement ring, and a ground extension surrounding the first electrode. The first electrode is configured to receive a workpiece and has an associated first electrode area. The power generator is operatively coupled to the first electrode, and the power generator is configured to generate RF power that is communicated to the first electrode. The second electrode is disposed at a distance from the first electrode. The second electrode is configured to provide a complete electrical circuit for RF power communicated from the first electrode. Additionally, the second electrode has a second electrode area that is greater than the first electrode area. At least one confinement ring is configured to assist confine the plasma.Type: ApplicationFiled: February 14, 2002Publication date: August 14, 2003Applicant: Lam Research CorporationInventors: Andreas Fischer, Dave Trussell, Bill Kennedy, Peter Loewenhardt