Abstract: A method for creating a clad structure, comprising providing a substrate having an inner surface and an outer surface; providing a cladding material, wherein the cladding material is placed on the inner surface of the substrate, the outer surface of the substrate, or both; providing a surface activation material that is disposed between the substrate and the cladding material; providing at least one resistance welding device, wherein the at least one resistance welding device includes at least one electrode wheel that directly contacts the cladding material, and wherein the at least one resistance welding device generates resistance heating and pressure sufficient to melt the surface activation material and form a localized bond between the substrate and the cladding layer; and traversing the at least one electrode wheel across the cladding material and substrate to propagate the localized bond between the cladding material and the substrate and create a clad structure.

Abstract: A system for creating a clad material that includes at least one substrate; at least one cladding layer; at least one surface activation layer disposed between the at least one substrate and the at least one cladding layer; and a resistance seam welder, wherein the resistance seam welder is operative to generate heat and pressure sufficient to melt the at least one surface activation layer and form a bond between the at least one substrate and the at least one cladding layer when the at least one surface activation layer is cooled.

Abstract: A system for creating a clad material that includes at least one substrate; at least one cladding layer; at least one surface activation layer disposed between the at least one substrate and the at least one cladding layer; and a resistance seam welder, wherein the resistance seam welder is operative to generate heat and pressure sufficient to melt the at least one surface activation layer and form a bond between the at least one substrate and the at least one cladding layer when the at least one surface activation layer is cooled.