Patents by Inventor David A. Ahmari

David A. Ahmari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Hydrogen ambient process for low contact resistivity PdGe contacts to III-V materials
    Patent number: 6103614
    Abstract: The invention uses hydrogen ambient atmosphere to directly form PdGe contacts on Group III-V materials. Specific GaAs HBT's have been formed in a 100% H.sub.2 ambient, and demonstrate low etch reactivity attributable to the significant incorporation of hydrogen. The LP-MOCVD method used to demonstrate the invention produced a specific contact resistivity of less than 1.times.10.sup.-7 .OMEGA.-cm-.sup.-2, at preferred conditions of a 100% hydrogen ambient, 300.degree. C., and 15 minute reaction time. This is believed to be the lowest known resistance of any alloy method employed for PdGe on GaAs. Equally significant, the contacts demonstrate increased durability during etching.
    Type: Grant
    Filed: September 2, 1998
    Date of Patent: August 15, 2000
    Assignee: The Board of Trustees of the University of Illinois
    Inventors: David A. Ahmari, Michael L. Hattendorf, David F. Lemmerhirt, Gregory E. Stillman