Abstract: Durable and optically transparent superhydrophobic surfaces have a coating of ceramic nanoparticles attached to a transparent substrate that are bound to the substrate through a flexible linker and a fluorocarbon moiety is bound to the surface of the ceramic nanoparticles. The nanoparticles provide the topography required for superhydrophobic surfaces and the fluorocarbon attached to the surface renders the particles hydrophobic. The nanoparticles can be metal oxide nanoparticles of dimensions that do not scatter light and the flexible linker can be constructed by an agent that has a group for bonding to the substrate and a reactive group to form a bond with a complementary second reactive group attached to a second agent that has a group for bonding to the nanoparticles.

Abstract: The object of the invention is the provision of methods for controlled production of continuous multi-component filaments or discreet structures using a multi-component liquid jet issuing from an orifice. A multi-component jet consists of two or more liquids. The liquids may be miscible or immiscible, and form a co-axially propagating flow along the central axis of a flow cell. The working distance between the exit orifice and a substrate can be as large as 50 mm, so that in-flight processing of the jet is possible. The coaxial flow consists of an outer sheath liquid and an inner sample liquid or composite of liquids. The flow cell and the exit channel of the deposition head are heated so that the pressurized sheath liquid temperature is raised to near or above the boiling point of the sheath liquid at the local atmospheric pressure. The jet exits the deposition head through the orifice, and the outer liquid is evaporated as the jet falls at atmospheric pressure.

Abstract: A self-cleaning object comprises a substrate with a surface of a first material that has a high dielectric constant overlaid with an ultrathin layer of a second material with a lower dielectric constant than the first material. This self-cleaning object repels liquids or particulate solids that have a lower dielectric constant than the dielectric constant of the ultrathin layer. Another self-cleaning object comprises a substrate with a surface of a first material that has a very low dielectric constant overlaid with an ultrathin layer of a second material with a low dielectric constant that is higher than the first material. This self-cleaning object attracts gases and repels liquids or particulate solids.

Abstract: The object of the invention is the provision of methods for controlled production of continuous multi-component filaments or discreet structures using a multi-component liquid jet issuing from an orifice. A multi-component jet consists of two or more liquids. The liquids may be miscible or immiscible, and form a co-axially propagating flow along the central axis of a flow cell. The working distance between the exit orifice and a substrate can be as large as 50 mm, so that in-flight processing of the jet is possible. The coaxial flow consists of an outer sheath liquid and an inner sample liquid or composite of liquids. The flow cell and the exit channel of the deposition head are heated so that the pressurized sheath liquid temperature is raised to near or above the boiling point of the sheath liquid at the local atmospheric pressure. The jet exits the deposition head through the orifice, and the outer liquid is evaporated as the jet falls at atmospheric pressure.

Abstract: The present invention is a method for the simultaneous codeposition of copper and aluminum from volatile copper and aluminum precursors to form a layer on a substrate under chemical vapor phase conditions, such as the metallization of an aluminum/(0.25-4% copper) layer on a silicon semiconductor electronic device.

Abstract: This invention is a vapor-phase process for cleaning metal-containing contaminants from the surfaces of integrated circuits and semiconductors between the numerous fabricating steps required to manufacture the finished electronic devices. The process employs cleaning agents comprising an effective amount of hexamethyldisilazane. The process comprises contacting the surface to be cleaned with an effective amount of the desired cleaning agent at a temperature sufficient to form volatile metal-ligand complexes on the surface of the substrate to be cleaned. The volatile metal-ligand complexes are sublimed from the surfaces of the substrate providing a clean, substantially residue-free surface.

Abstract: This invention is a residue-free vapor-phase process for etching metallic layers during the manufacturing of integrated circuits. The process comprises contacting a portion of the metallic surface to be etched with an effective amount of an etching agent comprising a .beta.-diketone or .beta.-ketoimine dispersed in an atmosphere capable of oxidizing the metal to be removed at a temperature sufficient to form a volatile metal-ligand complex. The volatile metal-ligand complex is sublimed from the surface thereby etching successive layers of the metal.

Abstract: This invention is a vapor-phase process for cleaning metal-containing contaminants from the surfaces of integrated circuits and semiconductors between the numerous fabricating steps required to manufacture the finished electronic devices. The process employs cleaning agents comprising an effective amount of a partially halogenated or fully halogenated linear or branched carboxylic acid having from 2 to about 10 carbon atoms wherein the halogen is selected from fluorine or chlorine. The process comprises contacting the surface to be cleaned with an effective amount of the desired cleaning agent at a temperature sufficient to form volatile metal-ligand complexes on the surface of the substrate to be cleaned. The volatile metal-ligand complexes are sublimed from the surfaces of the substrate providing a clean, substantially residue-free surface.

Abstract: This invention is a vapor-phase process for cleaning metal-containing contaminants from the surfaces of integrated circuits and semiconductors between the numerous fabricating steps required to manufacture the finished electronic devices. The process comprises contacting the surface to be cleaned with an effective amount of a cleaning agent comprising a carboxylic acid selected from acetic acid or formic acid at a temperature sufficient to form volatile metal-ligand complexes on the surface of the substrate to be cleaned. The volatile metal-ligand complexes are sublimed from the surface of the substrate providing a clean, substantially residue-free surface.

Abstract: The present invention addresses the use of metalorganic amines as metallic donor source compounds in reactive deposition applications. More specifically, the present invention addresses the use of the amino-substituted metallic donor source compounds M(NR.sub.2).sub.3-x H.sub.x, where R is organic, alkyl or fluoroalkyl, and x is less than or equal to 2, and M=As, Sb or P, in processes requiring deposition of the corresponding element. These uses include a number of different processes; the metalorganic vapor phase epitaxy of compound semiconductor material such as GaAs, InP, AlGaAs, etc.; doping of SiO.sub.2 or borosilicate based glasses to enhance the reflow properties of the glass; in-situ n-type doping of silicon epitaxial material; sourcing of arsenic or phosphorus for ion implantation; chemical beam epitaxy (or MOMBE); and diffusion doping into electronic materials such as silicon dioxide, silicon and polycrystalline silcon.

Abstract: This invention is a residue-free cleaning process for removing metal-containing contaminants from a surface of a substrate of the type used in manufacturing semi-conductor devices. The process comprises contacting the substrate with an effective amount of a cleaning agent comprising a .beta.-diketone or .beta.-ketoimine dispersed in an atmosphere capable of oxidizing the metal-contaminants at a temperature sufficient to form volatile metal-ligand complexes on the surface of the substrate. The volatile metal-ligand complexes are sublimed from the surface of the substrate leaving essentially no residue.

Abstract: A process for the vapor-phase synthesis of non-adduct volatile fluorinated and non-fluorinated metal-ligand complexes comprising contacting a .beta.-diketone or .beta.-ketoimine ligand with an inert carrier gas to vaporize the ligand, reacting the vaporized ligand with a metal species at a temperature sufficient to form the metal-ligand complex and recovering the metal-ligand complex by sublimation. The process is conducted in the absence of solvent thereby providing pure non-adduct metal-ligand complexes. Such complexes are particularly suited for specialty applications requiring use of high purity compounds.

Abstract: The present invention addresses the use of at least partially fluorinated organometallic compounds in reactive deposition applications. More specifically, the present invention addresses the use of the fluoroorganometallic compounds M(CF.sub.3).sub.3, or any M(C.sub.n F.sub.(2n+1)).sub.3-y H.sub.y compound where (y.ltoreq.2), M(CH.sub.2 CF.sub.3).sub.3 or any fluoroalkyl organometallics of the general formula M(C.sub.n H.sub.[(2n+1)-x] F.sub.x).sub.3-y H.sub.y, where y.ltoreq.2; x has a value 1.ltoreq.x.ltoreq.2n+1; and M=As, P, or Sb, in processes requiring deposition of the corresponding element. These uses include a number of different processes; the organometallic vapor phase epitaxy of compound semiconductor materials such as GaAs, InP, AlGaAs, InSb, etc. doping of SiO.sub.

Abstract: The present invention addresses the use of at least partially fluorinated organometallic compounds in reactive deposition applications. More specifically, the present invention addresses the use of the fluoroorganometallic compounds M(CF.sub.3).sub.3, M(CF.sub.2 CF.sub.3).sub.3, or any M(C.sub.n F.sub.(2n+1)).sub.3-y H.sub.y compound where (y.ltoreq.2), M(CH.sub.2 CF.sub.3).sub.3 or any fluoroalkyl organometallics of the general formula M(C.sub.n H.sub.[(2n+1)-x] F.sub.x).sub.3-y H.sub.y, where y.ltoreq.2; x has a value 1.ltoreq.x.ltoreq.2n+1; and M=As, P, or Sb, in processes requiring deposition of the corresponding element. These uses include a number of different processes; the organometallic vapor phase epitaxy of compound semiconductor materials such as GaAs, InP, AlGaAs, InSb, etc.; doping of SiO.sub.