Abstract: Measurement apparatus, for generating a first output signal indicative of a measurand, comprises: a first oscillator circuit and a second oscillator circuit, each oscillator circuit being arranged to generate a respective oscillating output signal and comprising at least a respective first component having a property determining a respective output frequency of the respective oscillating output signal; a sensor for sensing said measurand, the sensor comprising said first component of the first oscillator circuit, said property of said first component of the first oscillator circuit being dependent upon said measurand; and circuitry arranged to receive said oscillating output signals and generate said first output signal, said first output signal being indicative of a number of cycles of one of the first and second oscillating output signals in a time period determined by a period of the other of said first and second oscillating output signals.

Abstract: Apparatus, system, and method for separating gas from a composite fluid. The apparatus includes a main body defining a flow path formed from a separations chamber at an upstream end of the flow path and a head space chamber at the downstream end of the flow path. The main body includes a first set of apertures disposed about the separations chamber and a second set of apertures disposed about the head space chamber. An agitator is housed within the main body at an upstream end of the separations chamber and is configured to generate a vortex that conveys the composite fluid through the flow path. The vortex expels a liquid fraction and a solids fraction of the composite fluid from the first set of apertures, and the vortex conveys a gaseous fraction of the composite fluid into the head space chamber for extraction from the second set of apertures.

Abstract: The present invention provides nucleic acid molecules comprising a MeCP2 expression cassette, the expression cassette comprising, in operable linkage from 5? to 3?: a 5? transcriptional control region comprising a promoter capable of driving transcription in neural cells; an open reading frame encoding a MeCP2 protein; translation control signals; a 3? untranslated region (3?UTR) comprising one or more of: (i) a binding site for mir-22; (ii) a binding site for mir-19; (iii) a binding site for miR-132; (iv) a binding site for miR124; and (v) an AU-rich element; and transcriptional termination signals; wherein the MeCP2 expression cassette is not more than about 5 kb in length. The invention further provides viral vectors, especially vectors derived from adeno-associated virus (AAV), for use in therapeutic delivery of such expression cassettes.

Abstract: In an embodiment, a sample conditioning system includes a first valve subsystem, a controller, and a signal generator. The first valve subsystem includes a first electrically activated valve and a first timed switch in electrical communication with the first electrically activated valve, where the first timed switch is configured with a first time duration. The controller is configured to receive drilling data from a data source and, responsive to the drilling data satisfying a trigger associated with a timed sequence, cause the signal generator to apply a signal to at least the first timed switch. The signal causes the first timed switch to close for at least the first time duration and power the first electrically activated valve, the powered first electrically activated valve switching to allow air from a first air line to pass therethrough to a sample line.

Abstract: In an embodiment, a sample conditioning system includes a first valve subsystem, a controller, and a signal generator. The first valve subsystem includes a first electrically activated valve and a first timed switch in electrical communication with the first electrically activated valve, where the first timed switch is configured with a first time duration. The controller is configured to receive drilling data from a data source and, responsive to the drilling data satisfying a trigger associated with a timed sequence, cause the signal generator to apply a signal to at least the first timed switch. The signal causes the first timed switch to close for at least the first time duration and power the first electrically activated valve, the powered first electrically activated valve switching to allow air from a first air line to pass therethrough to a sample line.

Abstract: Some embodiments relate to herbicide compositions and methods of inducing phyotoxicity in a plant, by administering an aqueous composition to foliar portions of the plant. This aqueous composition includes at least one nutrient, and at least one adjuvant, and has a pH of about 4 to about 7. In some embodiments, the aqueous composition comprises an organic or mineral acid. In some embodiments, the phytotoxicity is topical. In some embodiments, the phytoxicity is systemic. Without being limited by theory, the nutrient is absorbed by the plant in excess, thereby killing the plant.

Abstract: In an embodiment, a sample conditioning system includes a first valve subsystem, a controller, and a signal generator. The first valve subsystem includes a first electrically activated valve and a first timed switch in electrical communication with the first electrically activated valve, where the first timed switch is configured with a first time duration. The controller is configured to receive drilling data from a data source and, responsive to the drilling data satisfying a trigger associated with a timed sequence, cause the signal generator to apply a signal to at least the first timed switch. The signal causes the first timed switch to close for at least the first time duration and power the first electrically activated valve, the powered first electrically activated valve switching to allow air from a first air line to pass therethrough to a sample line.

Abstract: A wafer includes a substrate that includes a channel layer, a first active region, a second active region, and a saw street region between the first active region and the second active region. The wafer includes a first device formed on the substrate in the first active region. The first device includes a first portion of the channel layer. The wafer includes a second device formed on the substrate in the second active region. The second device includes a second portion of the channel layer. The wafer includes a conductive channel between the first active region and the second active region. The conductive channel is in the saw street of the wafer and includes a third portion of the channel layer.

Abstract: An amplifier includes a semiconductor die and a substrate that is distinct from the semiconductor die. The semiconductor die includes a first RF signal input terminal, a first RF signal output terminal, and a transistor. The transistor has a control terminal electrically coupled to the first RF signal input terminal, and a current-carrying terminal electrically coupled to the first RF signal output terminal. The substrate includes a second RF signal input terminal, a second RF signal output terminal, circuitry coupled between the second RF signal input terminal and the second RF signal output terminal, and an electrostatic discharge (ESD) protection circuit. The amplifier also includes a connection electrically coupled between the ESD protection circuit and the control terminal of the transistor. The substrate may be another semiconductor die (e.g., with a driver transistor and/or impedance matching circuitry) or an integrated passive device.

Abstract: In an embodiment, a sample conditioning system includes a first valve subsystem, a controller, and a signal generator. The first valve subsystem includes a first electrically activated valve and a first timed switch in electrical communication with the first electrically activated valve, where the first timed switch is configured with a first time duration. The controller is configured to receive drilling data from a data source and, responsive to the drilling data satisfying a trigger associated with a timed sequence, cause the signal generator to apply a signal to at least the first timed switch. The signal causes the first timed switch to close for at least the first time duration and power the first electrically activated valve, the powered first electrically activated valve switching to allow air from a first air line to pass therethrough to a sample line.

Abstract: A semiconductor device includes a base substrate, a doped region at an upper surface of the base substrate, and a transistor over the upper surface of the base substrate and formed from a plurality of epitaxially-grown semiconductor layers. The doped region includes one or more ion species, and has a lower boundary above a lower surface of the base substrate. The base substrate may be a silicon substrate, and the transistor may be a GaN HEMT formed from a plurality of heteroepitaxial layers that include aluminum nitride and/or aluminum gallium nitride. The doped region may be a diffusion barrier region and/or an enhanced resistivity region. The ion species may be selected from phosphorus, arsenic, antimony, bismuth, argon, helium, nitrogen, and oxygen. When the ion species includes oxygen, the doped region may include a silicon dioxide layer formed from annealing the doped region after introduction of the oxygen.

Abstract: A semiconductor device includes a base substrate, a doped region at an upper surface of the base substrate, and a transistor over the upper surface of the base substrate and formed from a plurality of epitaxially-grown semiconductor layers. The doped region includes one or more ion species, and has a lower boundary above a lower surface of the base substrate. The base substrate may be a silicon substrate, and the transistor may be a GaN HEMT formed from a plurality of heteroepitaxial layers that include aluminum nitride and/or aluminum gallium nitride. The doped region may be a diffusion barrier region and/or an enhanced resistivity region. The ion species may be selected from phosphorus, arsenic, antimony, bismuth, argon, helium, nitrogen, and oxygen. When the ion species includes oxygen, the doped region may include a silicon dioxide layer formed from annealing the doped region after introduction of the oxygen.

Abstract: Some embodiments relate to herbicide compositions and methods of inducing phyotoxicity in a plant, by administering an aqueous composition to foliar portions of the plant. This aqueous composition includes at least one nutrient, and at least one adjuvant, and has a pH of about 4 to about 7. In some embodiments, the aqueous composition comprises an organic or mineral acid. In some embodiments, the phytotoxicity is topical. In some embodiments, the phytoxicity is systemic. Without being limited by theory, the nutrient is absorbed by the plant in excess, thereby killing the plant.

Abstract: A semiconductor device includes a base substrate, a doped region at an upper surface of the base substrate, and a transistor over the upper surface of the base substrate and formed from a plurality of epitaxially-grown semiconductor layers. The doped region includes one or more ion species, and has a lower boundary above a lower surface of the base substrate. The base substrate may be a silicon substrate, and the transistor may be a GaN HEMT formed from a plurality of heteroepitaxial layers that include aluminum nitride and/or aluminum gallium nitride. The doped region may be a diffusion barrier region and/or an enhanced resistivity region. The ion species may be selected from phosphorus, arsenic, antimony, bismuth, argon, helium, nitrogen, and oxygen. When the ion species includes oxygen, the doped region may include a silicon dioxide layer formed from annealing the doped region after introduction of the oxygen.

Abstract: Some embodiments relate to herbicide compositions and methods of inducing phyotoxicity in a plant, by administering an aqueous composition to foliar portions of the plant. This aqueous composition includes at least one nutrient, and at least one adjuvant, and has a pH of about 4 to about 7. In some embodiments, the aqueous composition comprises an organic or mineral acid. In some embodiments, the phytotoxicity is topical. In some embodiments, the phytoxicity is systemic. Without being limited by theory, the nutrient is absorbed by the plant in excess, thereby killing the plant.

Abstract: There is described a method of extracting DNA and/or RNA from a cell or capsid, the method comprising contacting the cell or capsid with a composition comprising a quaternary ammonium compound including a silicon-containing functional group. The quaternary ammonium compound may be of general formula (I) or a derivative salt thereof wherein L is a linking group; each of R1, R2, R3, R4, R5 and R6 is independently selected from H or an optionally substituted alkyl, alkenyl, aryl or alkoxy group; and n is 0 or 1. A PCR promoting agent may be provided. The method may be one of 1 detecting and/or diagnosing a disease or medical condition.

Abstract: We describe a quantitative PCR (qPCR) instrument for combined qPCR and melt curve (dissociation and/or association curve) analysis. The instrument has at least one optical channel; a fluorescence excitation source; a fluorescence detector; an electronic analog signal amplifier having an input coupled to an output of the fluorescence detector; and an analog-to-digital converter (ADC) having analog input coupled to an output of the analog signal amplifier. The instrument further comprises a quantified automatic gain control (AGC) loop coupled between the signal output of the fluorescence detector and the analog input of the ADC. The AGC loop is configured to apply a determined, numerical gain value to a fluorescence signal for the analog input of the ADC. The instrument also includes a system to scale a digital output of the ADC responsive to the numerical gain value and to provide a digital fluorescence level signal from the scaled digital output.

Abstract: A semiconductor device includes a base substrate, a doped region at an upper surface of the base substrate, and a transistor over the upper surface of the base substrate and formed from a plurality of epitaxially-grown semiconductor layers. The doped region includes one or more ion species, and has a lower boundary above a lower surface of the base substrate. The base substrate may be a silicon substrate, and the transistor may be a GaN HEMT formed from a plurality of heteroepitaxial layers that include aluminum nitride and/or aluminum gallium nitride. The doped region may be a diffusion barrier region and/or an enhanced resistivity region. The ion species may be selected from phosphorus, arsenic, antimony, bismuth, argon, helium, nitrogen, and oxygen. When the ion species includes oxygen, the doped region may include a silicon dioxide layer formed from annealing the doped region after introduction of the oxygen.

Abstract: Some embodiments relate to herbicide compositions and methods of inducing phyotoxicity in a plant, by administering an aqueous composition to foliar portions of the plant. This aqueous composition includes at least one nutrient, and at least one adjuvant, and has a pH of about 4 to about 7. In some embodiments, the aqueous composition comprises an organic or mineral acid. In some embodiments, the phytotoxicity is topical. In some embodiments, the phytoxicity is systemic. Without being limited by theory, the nutrient is absorbed by the plant in excess, thereby killing the plant.

Abstract: Some embodiments relate to herbicide compositions and methods of inducing phytotoxicity in a plant, by administering an aqueous composition to foliar portions of the plant. This aqueous composition includes at least one nutrient, and at least one adjuvant, and has a pH of about 4 to about 7. In some embodiments, the aqueous composition comprises an organic or mineral acid. In some embodiments, the phytotoxicity is topical. In some embodiments, the phytoxicity is systemic. Without being limited by theory, the nutrient is absorbed by the plant in excess, thereby killing the plant.