Abstract: A beam delivery system is provided that includes a beam delivery photonic integrated circuit. The beam delivery photonic integrated circuit includes one or more optical inputs; a plurality of waveguide outputs; and a plurality of beam paths. Each beam path connects one of the plurality of waveguide outputs to at least one of the optical inputs. The plurality of waveguide outputs are configured to emit a plurality of parallel beams. The beam delivery photonic integrated circuit is on a chip. The beam delivery system further includes a telecentric optical relay assembly. The telecentric optical relay assembly is configured to receive the plurality of parallel beams provided by the waveguide outputs and focus each received beam on a corresponding one of a plurality of positions of an atomic object confinement apparatus in a telecentric manner.

Abstract: A high-voltage semiconductor switch is provided. The high-voltage semiconductor switch comprises one or more switch subcircuits, wherein each switch subcircuit may comprise one or more FET circuits and voltage-shifting transistor. The high-voltage semiconductor switch may be configured based on operational and environmental requirements, such as those of a quantum computing system, wherein the high-voltage switch may be located in a cryostat or vacuum chamber.

Abstract: A low loss silicon nitride film is formed by depositing a silicon nitride film on a substrate and annealing the silicon nitride film for at least ten hours at a temperature of at least 400° C. to cause the silicon nitride film to become a low loss silicon nitride film. The low loss silicon nitride film has an optical loss of less than 1 dB per cm at a wavelength of 488 nm.

Abstract: Provided is a novel beam delivery system for quantum computing applications that includes a beam delivery photonic integrated circuit on a chip and an optical relay assembly. The beam delivery photonic integrated circuit on a chip may contain one or more layers, and a layer may contain one or more inputs connecting one or more outputs. The optical relay assembly receives a beam or beams from one or more outputs from a layer of the beam delivery photonic integrated circuit. The optical relay assembly focuses each received beam on a corresponding position of an atomic object confinement apparatus.

Abstract: An ion trap apparatus (e.g., ion trap chip) having a plurality of electrodes is provided. The ion trap apparatus may comprise a plurality of interconnect layers, a substrate, and at least one integrated switching network layer disposed between the plurality of interconnect layers and the substrate. The integrated switching network layer may comprise a plurality of monolithically-integrated controls and/or switches configured to condition a voltage signal applied to at least one of the plurality of electrodes. An example ion trap apparatus may comprise a surface ion trap chip. The ion trap apparatus may be configured to operate within a cryogenic chamber.

Abstract: A high-voltage semiconductor switch is provided. The high-voltage semiconductor switch comprises one or more switch subcircuits, wherein each switch subcircuit may comprise one or more FET circuits and voltage-shifting transistor. The high-voltage semiconductor switch may be configured based on operational and environmental requirements, such as those of a quantum computing system, wherein the high-voltage switch may be located in a cryostat or vacuum chamber.

Abstract: An ion trap apparatus (e.g., ion trap chip) having a plurality of electrodes is provided. The ion trap apparatus may comprise a plurality of interconnect layers, a substrate, and at least one integrated switching network layer disposed between the plurality of interconnect layers and the substrate. The integrated switching network layer may comprise a plurality of monolithically-integrated controls and/or switches configured to condition a voltage signal applied to at least one of the plurality of electrodes. An example ion trap apparatus may comprise a surface ion trap chip. The ion trap apparatus may be configured to operate within a cryogenic chamber.

Abstract: Provided is a novel beam delivery system for quantum computing applications that includes a beam delivery photonic integrated circuit on a chip and an optical relay assembly. The beam delivery photonic integrated circuit on a chip may contain one or more layers, and a layer may contain one or more inputs connecting one or more outputs. The optical relay assembly receives a beam or beams from one or more outputs from a layer of the beam delivery photonic integrated circuit. The optical relay assembly focuses each received beam on a corresponding position of an atomic object confinement apparatus.

Abstract: A lateral spin valve reader includes a detector located proximate to a bearing surface of the reader, and a spin injector located away from the bearing surface. The lateral spin valve reader also includes a channel that extends from the detector to the spin injector. The channel includes a two-dimensional semiconducting layer that extends from the detector to the spin injector.

Abstract: Implementations described and claimed herein include a method for manufacturing monolithically-integrated on-slider hybridized electronics for magnetic read/write. The method includes forming a slider body, excising a void in a surface of the slider body, monolithically integrating an electronic block into the void of the slider body, polishing the surface of the slider body, and depositing functional layers on the surface of the slider body. By integrating electronics in close proximity to transducers, operational performance and functionality may be gained.

Abstract: A data reader may be configured with at least a detector stack positioned on an air bearing surface and consisting of a spin accumulation channel continuously extending from the air bearing surface to an injector stack. The injector stack can have at least one cladding layer contacting the spin accumulation channel. The at least one cladding layer may have a length as measured perpendicular to the ABS that filters minority spins from the detector stack.

Abstract: A lateral spin valve reader includes a detector located proximate to a bearing surface of the reader, and a spin injector located away from the bearing surface. The lateral spin valve reader also includes a channel that extends from the detector to the spin injector. The channel includes a two-dimensional semiconducting layer that extends from the detector to the spin injector.

Abstract: A lateral spin valve reader and fabrication method thereof. The method includes forming an injector, a detector and a common channel layer that extends from the injector to the detector. The method also includes forming a first channel layer between the common channel layer and at least one of the injector or the detector with the first channel layer in contact with the common channel layer, thereby providing an interface between the first channel layer and the common channel layer.

Abstract: A data reader may be configured with at least a detector stack positioned on an air bearing surface and consisting of a spin accumulation channel continuously extending from the air bearing surface to an injector stack. The injector stack can have at least one cladding layer contacting the spin accumulation channel. The at least one cladding layer may have a length as measured perpendicular to the ABS that filters minority spins from the detector stack.

Abstract: Various embodiments of a magnetic stack are disclosed. In one or more embodiments, the magnetic stack includes first and second shield layers, and a magnetically responsive lamination disposed between the first and second shield layers. The magnetically responsive lamination can be configured to receive a sense current IS therethrough. The magnetic stack also includes a cooling element disposed between the first and second shield layers and thermally coupled to the magnetically responsive lamination. The cooling element can be configured to receive a bias current IB therethrough. And the cooling element can be configured to cool the magnetically responsive lamination during a read function.

Abstract: A data reader may have an resonant tunnel structure disposed between first and second magnetic structures. The resonant tunnel structure can be configured with a spacer layer disposed between first and second barrier layers. The first barrier layer can have a first thickness that is smaller than a second thickness of the second barrier layers with the thicknesses each measured along a common plane to provide resonant tunneling for the data reader.

Abstract: A lateral spin valve reader that includes a detector structure located proximate to a bearing surface and a spin injection structure located away from the bearing surface. The lateral spin valve reader also includes a channel layer extending from the detector structure to the spin injection structure. An exterior cladding, disposed around the channel layer, suppresses spin-scattering at surfaces of the channel layer.

Abstract: Various embodiments of a magnetic stack are disclosed. In one or more embodiments, the magnetic stack includes first and second shield layers, and a magnetically responsive lamination disposed between the first and second shield layers. The magnetically responsive lamination can be configured to receive a sense current IS therethrough. The magnetic stack also includes a cooling element disposed between the first and second shield layers and thermally coupled to the magnetically responsive lamination. The cooling element can be configured to receive a bias current IB therethrough. And the cooling element can be configured to cool the magnetically responsive lamination during a read function.

Abstract: A lateral spin valve reader includes a detector located proximate to a bearing surface of the reader, a spin injector located away from the bearing surface, and a channel layer that substantially extends from the detector to the spin injector. The channel layer and the detector are substantially in a same plane.

Abstract: A lateral spin valve reader includes a channel layer having a first end that is proximate to a bearing surface and a second end that is away from the bearing surface. The lateral spin valve reader also includes a detector structure disposed over an upper surface of a first portion of the channel layer that is proximate to the first end of the channel layer. A spin injection structure disposed below a lower surface of a second portion of the channel layer is proximate to the second end of the channel layer. An area of overlap between the spin injection structure and the second portion of the channel layer is substantially larger than an area of overlap between the detector structure and the first portion of the channel layer.