Abstract: Methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate include pulsing a low frequency radio frequency component at a high power. Pulsing low frequency power may be used to increase the selectivity or reduce the stress of an AHM. The AHM may then be used to etch features into underlying layers of the substrate.

Abstract: An integrated circuit includes a substrate having a first conductivity type. A well formed at an upper surface has a second, opposite conductivity type and a first dopant concentration. First and second STI structures are formed and a polysilicon gate structure is formed between the first and second STI structures. The polysilicon gate structure extends over a first side of the first STI structure and over a first side of the second STI structure. A first doped region is formed within the well at the upper surface and on a second side of the first STI structure and a second doped region is formed within the well at the upper surface and on a second side of the second STI structure. The first and second doped regions each have the second conductivity type and a second dopant concentration that is greater than the first dopant concentration.

Abstract: A system for controlling of wafer bow in plasma processing stations is described. The system includes a circuit that provides a low frequency RF signal and another circuit that provides a high frequency RF signal. The system includes an output circuit and the stations. The output circuit combines the low frequency RF signal and the high frequency RF signal to generate a plurality of combined RF signals for the stations. Amount of low frequency power delivered to one of the stations depends on wafer bow, such as non-flatness of a wafer. A bowed wafer decreases low frequency power delivered to the station in a multi-station chamber with a common RF source. A shunt inductor is coupled in parallel to each of the stations to increase an amount of current to the station with a bowed wafer. Hence, station power becomes less sensitive to wafer bow to minimize wafer bowing.

Abstract: Provided is a spacer device for assisting a surgeon during knee surgery on a patient, the spacer device having a housing, a support portion and an electronic force sensor. The housing includes a lateral member having an outer surface and an inner surface and a pair of side members that comprise respective, internal, opposed side walls. The support portion includes a first end portion disposed between the side walls of the housing and including a first pair of lateral projections and a second end portion. The support portion is further adapted for axial slidable movement relative to the housing so as to define a first space and a second space between a first pair of lateral projections and respective side members for receiving one or more spacer elements therein. A surgical system including the spacer device as well as methods of using same are also provided.

Abstract: Methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate include pulsing a low frequency radio frequency component at a high power. Pulsing low frequency power may be used to increase the selectivity or reduce the stress of an AHM. The AHM may then be used to etch features into underlying layers of the substrate.

Abstract: A system for controlling of wafer bow in plasma processing stations is described. The system includes a circuit that provides a low frequency RF signal and another circuit that provides a high frequency RF signal. The system includes an output circuit and the stations. The output circuit combines the low frequency RF signal and the high frequency RF signal to generate a plurality of combined RF signals for the stations. Amount of low frequency power delivered to one of the stations depends on wafer bow, such as non-flatness of a wafer. A bowed wafer decreases low frequency power delivered to the station in a multi-station chamber with a common RF source. A shunt inductor is coupled in parallel to each of the stations to increase an amount of current to the station with a bowed wafer. Hence, station power becomes less sensitive to wafer bow to minimize wafer bowing.

Abstract: A substrate support configured to support a substrate having a diameter D comprises a first inner electrode and a second inner electrode that are each D-shaped, define a first outer diameter that is less than D, and are configured to be connected to an electrostatic chuck voltage to clamp the substrate to the substrate support. An outer electrode comprises a ring-shaped outer portion that surrounds the first inner electrode and the second inner electrode and a center portion that pass between the first inner electrode and the second inner electrode to connect to opposite sides of an inner diameter of the ring-shaped outer portion. The inner diameter of the ring-shaped outer portion is greater than the diameter D such that the inner diameter of the ring-shaped outer portion and intersections between the center portion and the ring-shaped outer portion are located radially outside of the diameter D of the substrate.

Abstract: A dual strip protective edge film system for a roofing membrane having a first protective edge film strip covering a top edge portion of the roofing membrane and a second protective edge film strip covering a top portion of the roofing membrane, wherein the second protective edge film strip is positioned in parallel next to the first protective edge film strip, and wherein both of the edge strips have a combined width approximately equal to the width of the overlap between two overlapping roofing membranes that are adhesively secured or thermally welded together.

Abstract: A microelectronic device has a Hall sensor that includes a Hall plate in a semiconductor material. The Hall sensor includes contact regions in the semiconductor material, contacting the Hall plate. The Hall sensor includes an isolation structure with a dielectric material contacting the semiconductor material, on at least two opposite sides of each of the contact regions. The isolation structure is laterally separated from the contact regions by gaps. The Hall sensor further includes a conductive spacer over the gaps, the conductive spacer being separated from the semiconductor material by an insulating layer.

Abstract: A circuit tuning radio frequency (RF) power. The circuit includes a low to mid frequency (LF/HF) tuning circuit including a variable LF/MF capacitor coupled in series with an LF/MF inductor. The LF/MF tuning circuit is coupled between ground and a common node configured to receive an RF input. The circuit includes a high frequency (HF) tuning circuit coupled in parallel to the LF/MF tuning circuit between ground and the common node. The HF tuning circuit includes a variable HF capacitor coupled in series with an HF inductor. Cross parallel isolation occurs between the LF/MF inductor of the LF/MF tuning circuit and the HF inductor of the HF tuning circuit when adjusting the variable LF/MF capacitor or variable HF capacitor.

Abstract: An integrated circuit includes a substrate having a first conductivity type. A well formed at an upper surface has a second, opposite conductivity type and a first dopant concentration. First and second STI structures are formed and a polysilicon gate structure is formed between the first and second STI structures. The polysilicon gate structure extends over a first side of the first STI structure and over a first side of the second STI structure. A first doped region is formed within the well at the upper surface and on a second side of the first STI structure and a second doped region is formed within the well at the upper surface and on a second side of the second STI structure. The first and second doped regions each have the second conductivity type and a second dopant concentration that is greater than the first dopant concentration.

Abstract: A microelectronic device has a Hall sensor that includes a Hall plate in a semiconductor material. The Hall sensor includes contact regions in the semiconductor material, contacting the Hall plate. The Hall sensor includes an isolation structure with a dielectric material contacting the semiconductor material, on at least two opposite sides of each of the contact regions. The isolation structure is laterally separated from the contact regions by gaps. The Hall sensor further includes a conductive spacer over the gaps, the conductive spacer being separated from the semiconductor material by an insulating layer.

Abstract: Apparatus, and their methods of manufacture, including an integrated circuit device having metallization layers for interconnecting underlying electronic devices. Contacts contact conductors of an uppermost one of the metallization layers. A planarized first dielectric layer covers the contacts and the uppermost one of the metallization layers. An anisotropic magnetoresistive (AMR) stack is on the first dielectric layer between vertically aligned portions of an etch stop layer formed on the first dielectric layer and a second dielectric layer formed on the etch stop layer. Vias extend through the first dielectric layer to electrically connect the AMR stack and the contacts. A chemical-mechanical planarization (CMP) stop layer is on the AMR stack. A third dielectric layer is on the CMP stop layer. A passivation layer contacts the second dielectric layer portions, the third dielectric layer, and each opposing end of the AMR stack and the CMP stop layer.

Abstract: A circuit tuning radio frequency (RF) power. The circuit includes a low to mid frequency (LF/HF) tuning circuit including a variable LF/MF capacitor coupled in series with an LF/MF inductor. The LF/MF tuning circuit is coupled between ground and a common node configured to receive an RF input. The circuit includes a high frequency (HF) tuning circuit coupled in parallel to the LF/MF tuning circuit between ground and the common node. The HF tuning circuit includes a variable HF capacitor coupled in series with an HF inductor. Cross parallel isolation occurs between the LF/MF inductor of the LF/MF tuning circuit and the HF inductor of the HF tuning circuit when adjusting the variable LF/MF capacitor or variable HF capacitor.

Abstract: Provided is a spacer device for assisting a surgeon during knee surgery on a patient, the spacer device having a housing and a support portion. The housing includes a lateral member having an outer surface and an inner surface and a pair of side members that comprise respective, internal, opposed side walls. The support portion includes a first end portion disposed between the side walls of the housing and including a first pair of lateral projections and a second end portion. The support portion is further adapted for axial slidable movement relative to the housing so as to define a first space and a second space between a first pair of lateral projections and respective side members for receiving one or more spacer elements therein. A surgical system including the spacer device as well as methods of using same are also provided.

Abstract: A thermal choke rod connecting a radio frequency source to a substrate support of a plasma processing system includes a tubular member having a first connector for connecting to an RF rod coupled to the substrate support and a second connector for connecting to an RF strap that couples to the RF source. A tubular segment extends between the first and second connectors. The first connector has a conically-shaped end region that tapers away from the inner surface thereof to an outer surface in a direction toward the tubular segment, and slits that extend for a prescribed distance from a terminal end of the first connector. The outer surface of the tubular segment has a threaded region for threaded engagement with an annular cap that fits over the first connector and reduces an inner diameter of the first connector upon contact with the conically-shaped end region of the first connector.

Abstract: A substrate processing system for processing a substrate within a processing chamber includes a matching network, a tuning circuit, and a controller. The matching network receives a first RF signal having a first frequency from a RF generator and impedance matches an input of the matching network to an output of the RF generator. The tuning circuit is distinct from the matching network and includes a circuit component having a first impedance. The tuning circuit receives an output of the matching network and outputs a second RF signal to a first electrode in a substrate support. The controller determines a target impedance for the circuit component, and based on the target impedance, signal the RF generator to adjust the first frequency of the first RF signal received at the matching network to a second frequency to alter the first impedance of the circuit component to match the target impedance.

Abstract: A thermal choke rod connecting a radio frequency source to a substrate support of a plasma processing system includes a tubular member having a first connector for connecting to an RF rod coupled to the substrate support and a second connector for connecting to an RF strap that couples to the RF source. A tubular segment extends between the first and second connectors. The first connector has a conically-shaped end region that tapers away from the inner surface thereof to an outer surface in a direction toward the tubular segment, and slits that extend for a prescribed distance from a terminal end of the first connector. The outer surface of the tubular segment has a threaded region for threaded engagement with an annular cap that fits over the first connector and reduces an inner diameter of the first connector upon contact with the conically-shaped end region of the first connector.

Abstract: A filter module for a substrate processing chamber includes a plurality of exterior panels defining an interior, a plurality of internal panels defining a plurality of compartments within the interior of the filter module, and an adjustable capacitor arranged on a first panel of the plurality of internal panels within a first compartment of the plurality of compartments. The adjustable capacitor is coupled, through the first panel, to a motor located outside of the first compartment, and the adjustable capacitor is configured to receive a radio frequency input signal and provide a radio frequency voltage to the substrate processing chamber based on a position of the motor.

Abstract: Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate by pulsing a low frequency radio frequency component at a high power. Pulsing low frequency power may be used to increase the selectivity or reduce the stress of an AHM. The AHM may then be used to etch features into underlying layers of the substrate.